Thermal Expansion and Laser Trim Stability of Ruthenium Based Thick Film Resistors on Alumina and on Multilayer Dielectric

1982 ◽  
Vol 1 (1) ◽  
pp. 24-27 ◽  
Author(s):  
I. Taitl
Keyword(s):  
Thermal Expansion ◽  
Thick Film ◽  
Chemical Structure ◽  
Coefficient Of Thermal Expansion ◽  
Ruthenium Dioxide ◽  
Theoretical Conclusion ◽  
Film Resistor ◽  
Thick Film Resistor ◽  
The Relationship ◽  
Multilayer Dielectric

Fired resistors exhibit variations which are minimised by abrasive and laser trimming. The latter may cause unstable behaviour which is further aggravated by thermal shock. The chemical structure of a thick film resistor is analysed with respect to mechanical stress, and the theoretical conclusion that the coefficient of thermal expansion of the resistor should be equal to or smaller than that of the substrate is verified experimentally. The thermal behaviour of ruthenium dioxide is examined and a range of CTE values are determined for materials of varying chemical composition. The relationship between CTE and post laser trimming stability is demonstrated on four thick film resistors which differ in thermal expansion. It is pointed out that formulations with high metallic content can absorb tensile stress by elastic deformation, thus minimising the formation or propagation of laser induced cracks.

scholarly journals The Relationship Between the Electrical Properties of Thick Film Resistors and the Thermal Expansion Coefficient of the Substrates

1987 ◽  
Vol 12 (4) ◽  
pp. 251-257 ◽  
Author(s):  
Toshio Inokuma ◽  
Yoshiaki Taketa ◽  
Miyoshi Haradome
Keyword(s):  
Thermal Expansion ◽  
Electrical Properties ◽  
Low Temperature ◽  
Thick Film ◽  
Thermal Expansion Coefficient ◽  
Expansion Coefficient ◽  
Film Resistor ◽  
Thick Film Resistor ◽  
The Relationship ◽  
Resistance Value

The temperature characteristics of RuO2-based thick film resistors on various substratcs having different thermal expansion coefficient have been investigated.It became clear that, if the thermal expansion coefficient of the substrate is larger than that of the thick film resistor, a compression is being exerted by the substrate on the as-fired resistor at low temperature. As temperature rises, the resistance value increases, and the TCR becomes positive.On the contrary, if the thermal expansion coefficient of the resistor is larger than that of the substrate, the as-fired resistor is being stretched by the substrate at low temperature. As temperature rises, the resistancc value decreases, and the TCR becomes negative.

Investigation towards the optimum of power capability, ageing stability and costs effectiveness on thick film resistor pastes for AlN ceramics

2018 ◽  
Vol 2018 (1) ◽  
pp. 000606-000612
Author(s):  
Richard Schmidt ◽  
Manja Marcinkowski ◽  
Claudia Feller ◽  
Uwe Partsch
Keyword(s):  
Thick Film ◽  
Precious Metal ◽  
Cost Savings ◽  
Raw Material ◽  
Ruthenium Dioxide ◽  
Film Properties ◽  
Conducting Phase ◽  
Film Resistor ◽  
Thick Film Resistor ◽  
Power Capability

Abstract The focus of this work was the optimization of a 10 Ω/□ thick film resistor (TFR) paste composition to obtain increased power capability, aging stability and minimum use of ruthenium oxide for cost savings without changing the defined narrow sheet resistance (R□) and temperature coefficient of resistance (TCR) specifications. In times of highly fluctuating precious metal costs, the use of a minimum of the precious metal ruthenium respectively ruthenium dioxide is one essential part for cost-effectiveness. The thick film paste formulation consists of the electrically conducting phase ruthenium dioxide, a lead-free glass phase and two inorganic additives for tuning thermo-mechanical and electrical properties of the formed films. A phthalate free organic vehicle with ethyl cellulose polymer was used to formulate a screen printable ceramic thick film paste. For this paper, RuO2 powders with various specific surface area values (BET) were prepared by thermal annealing of a precipitated fine ruthenium dioxide powder. All other solid and liquid components of the paste were the same as used for IKTS 10 Ω/□ TFR paste FK9611 for AlN substrates. Furthermore, the content of ruthenium dioxide in the paste compositions was changed systematically around an assumed target content to achieve the desired sheet resistivity. Concurrent to the variation of the ruthenium dioxide content the inorganic additives had to be adapted too. The influence of the variations of raw material and paste composition on the film properties were investigated by screen printing 24 resistors of 2 mm × 1 mm dimension on an 1” × 1” AlN substrate, firing at 850 °C for 10 minutes in air atmosphere and subsequently measuring R□, TCR, the stability of resistance ΔR/R0 effected by artificial aging of the resistors (stored 100 up to 1000 hours @ 200°C) and the maximum rated power dissipation (MRPD) as well as short term overload voltage (STOL). The results are discussed in regard to find an optimum between all demands of the most important electrical film properties.

Evaluation of Glass Frits for Development of Lead-Free Thick Film Resistor

2010 ◽  
Vol 2010 (1) ◽  
pp. 000752-000759
Author(s):  
Xudong Chen ◽  
W. Kinzy Jones
Keyword(s):  
Electrical Properties ◽  
Temperature Coefficient ◽  
Thick Film ◽  
Glass Frit ◽  
Lead Free ◽  
Temperature Coefficient Of Resistance ◽  
Film Resistor ◽  
Thick Film Resistor ◽  
Glass Compositions ◽  
Free Glass

Glass frit is a major component of thick film resistor (TFR) for the production of hybrid circuits. More than thirty commercial lead-free glass frits with different compositions have been evaluated for developing a lead-free thick film resistor that is compatible with typical industry thick film processing and has comparable electrical properties as the lead bearing counterpart. Two glass compositions were selected out of 33 candidates for preparation of RuO2 based TFR inks, which were screen printed on alumina substrates and fired at 850°C. The preliminary results of these resistors showed that the sheet resistance spanned from 400 ohms per square (Ω/□) to 0.4 mega-ohms per square (MΩ/□) with 5–15% RuO2 and the hot temperature coefficient of resistance (HTCR) fell in a range of ±350ppm/°C.

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