A novel channel resistance ratio method for effective channel length and series resistance extraction in MOSFETs

Guofu Niu; Suraj J Mathew; John D Cressler; Seshu Subbanna

doi:10.1016/s0038-1101(00)00054-x

A novel channel resistance ratio method for effective channel length and series resistance extraction in MOSFETs

Solid-State Electronics ◽

10.1016/s0038-1101(00)00054-x ◽

2000 ◽

Vol 44 (7) ◽

pp. 1187-1189 ◽

Cited By ~ 2

Author(s):

Guofu Niu ◽

Suraj J Mathew ◽

John D Cressler ◽

Seshu Subbanna

Keyword(s):

Series Resistance ◽

Channel Length ◽

Resistance Ratio ◽

Ratio Method ◽

Channel Resistance ◽

Effective Channel

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A new method to determine effective channel length, series resistance and threshold voltage

Proceedings of International Conference on Microelectronic Test Structures ◽

10.1109/icmts.1996.535635 ◽

2002 ◽

Cited By ~ 5

Author(s):

M. Sasaki ◽

H. Ito ◽

T. Horiuchi

Keyword(s):

Threshold Voltage ◽

Series Resistance ◽

Channel Length ◽

New Method ◽

Effective Channel

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A simple method for effective channel length, series resistance and mobility extraction in deep-submicron MOSFETs

Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004. ◽

10.1109/icsict.2004.1436665 ◽

2005 ◽

Author(s):

Chun-li Yu ◽

Yue Hao ◽

Lin-an Yang

Keyword(s):

Series Resistance ◽

Channel Length ◽

Deep Submicron ◽

Simple Method ◽

Effective Channel

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Extraction of MOSFET threshold voltage, series resistance, effective channel length, and inversion layer mobility from small-signal channel conductance measurement

IEEE Transactions on Electron Devices ◽

10.1109/16.974720 ◽

2001 ◽

Vol 48 (12) ◽

pp. 2870-2874 ◽

Cited By ~ 17

Author(s):

F.C.J. Kong ◽

Y.T. Yeow ◽

Z.Q. Yao

Keyword(s):

Threshold Voltage ◽

Series Resistance ◽

Inversion Layer ◽

Channel Length ◽

Small Signal ◽

Channel Conductance ◽

Conductance Measurement ◽

Signal Channel ◽

And Inversion ◽

Effective Channel

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Influence of drain bias voltage on determining the effective channel length and series resistance of drain-engineered MOSFETs below saturation

Solid-State Electronics ◽

10.1016/0038-1101(92)90031-7 ◽

1992 ◽

Vol 35 (5) ◽

pp. 643-649 ◽

Cited By ~ 3

Author(s):

S.L. Chen ◽

Jeng Gong

Keyword(s):

Bias Voltage ◽

Series Resistance ◽

Channel Length ◽

Drain Bias ◽

Effective Channel

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Extracting the series resistance and effective channel length of short-channel MOSFETs at liquid nitrogen temperature

Solid-State Electronics ◽

10.1016/0038-1101(94)90061-2 ◽

1994 ◽

Vol 37 (12) ◽

pp. 1943-1948 ◽

Cited By ~ 19

Author(s):

F.J. García Sánchez ◽

A. Ortiz-Conde ◽

M. García Núñez ◽

R.L. Anderson

Keyword(s):

Liquid Nitrogen ◽

Series Resistance ◽

Liquid Nitrogen Temperature ◽

Channel Length ◽

Short Channel ◽

Effective Channel

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Determination of gate-bias dependent source/drain series resistance and effective channel length for advanced MOS devices

Solid-State Electronics ◽

10.1016/j.sse.2006.09.005 ◽

2006 ◽

Vol 50 (11-12) ◽

pp. 1774-1779 ◽

Cited By ~ 8

Author(s):

C.S. Ho ◽

Y.C. Lo ◽

Y.H. Chang ◽

Juin J. Liou

Keyword(s):

Series Resistance ◽

Channel Length ◽

Gate Bias ◽

Mos Devices ◽

Effective Channel

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Effective channel length and external series resistance models of scaled LDD pMOSFETs operating in a Bi-MOS hybrid-mode environment

IEEE Transactions on Electron Devices ◽

10.1109/16.918250 ◽

2001 ◽

Vol 48 (5) ◽

pp. 1001-1004 ◽

Cited By ~ 2

Author(s):

S.H.L. Seah ◽

Kiat Seng Yeo ◽

Jian Guo Fia ◽

Manh Anh Do

Keyword(s):

Series Resistance ◽

Channel Length ◽

Hybrid Mode ◽

Effective Channel

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A simple procedure to determine source/drain series resistance and effective channel length for advanced MOSFETs

2008 9th International Conference on Solid-State and Integrated-Circuit Technology ◽

10.1109/icsict.2008.4734561 ◽

2008 ◽

Author(s):

Yang-Hua Chang ◽

Ying-Chieh Cheng ◽

Ching-Sung Ho

Keyword(s):

Series Resistance ◽

Simple Procedure ◽

Channel Length ◽

Effective Channel

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Effective Channel Length and Source-Drain Series-Resistance Determination after Electrical Gate Length Verification of Metal-Oxide-Semiconductor Field-Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.796 ◽

1998 ◽

Vol 37 (Part 1, No. 3A) ◽

pp. 796-800 ◽

Cited By ~ 1

Author(s):

Ting-Huan Chang ◽

Jenn-Gee Lo ◽

Tung-Cheng Kuo ◽

Charles Ching-Hsiang Hsu ◽

Swei-Yam Yu ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Series Resistance ◽

Channel Length ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Length ◽

Effect Transistor ◽

Effective Channel

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Extraction of mobility degradation, effective channel length and total series resistance of NMOS at elevated temperature

The 8th Electrical Engineering/ Electronics, Computer, Telecommunications and Information Technology (ECTI) Association of Thailand - Conference 2011 ◽

10.1109/ecticon.2011.5947755 ◽

2011 ◽

Cited By ~ 5

Author(s):

Kunagone Kiddee ◽

Anucha Ruangphanit ◽

Surasak Niemcharoen ◽

Narin Atiwongsangthong ◽

Rangson Muanghlua

Keyword(s):

Elevated Temperature ◽

Series Resistance ◽

Channel Length ◽

Mobility Degradation ◽

Effective Channel

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