High dose rate effects in silicon by plasma source ion implantation

Author(s):  
M. Chun ◽  
B. Kim ◽  
J. R. Conrad ◽  
R. J. Matyi ◽  
S. M. Malik ◽  
...  
2001 ◽  
Vol 40 (Part 1, No. 4A) ◽  
pp. 2506-2507
Author(s):  
Jeonghee Cho ◽  
Seunghee Han ◽  
Yeonhee Lee ◽  
Ok Kyung Kim ◽  
Gon-Ho Kim ◽  
...  

2019 ◽  
Vol 46 (10) ◽  
Author(s):  
Theodor Asavei ◽  
Mariana Bobeica ◽  
Viorel Nastasa ◽  
Gina Manda ◽  
Florin Naftanaila ◽  
...  

1995 ◽  
Vol 396 ◽  
Author(s):  
Shu Qin ◽  
James D. Bernstein ◽  
Yuanzhong Zhou ◽  
Wei Liu ◽  
Chung Chan ◽  
...  

AbstractPlasma ion implantation (PII) hydrogenation has been developed for defect passivation in polycrystalline silicon (poly-Si) thin film transistors (TFTs). A high dose rate PII process using a microwave multipolar bucket (MMB) plasma source and a 12.5 kHz pulse generator achieves saturation of device parameter improvement in 5 minutes, which is much shorter than other hydrogenation methods investigated thus far. These results have been achieved in one sixth the implant time of our previous PII experiments and are in good agreement with our process simulation.


Author(s):  
Abida Sultana ◽  
Jintana Meesungnoen ◽  
Jean-Paul Jay-Gerin

Monte Carlo track chemistry simulations were used to study the effects of high dose rates on the radical (e-aq, H•, and •OH) and molecular (H2 and H2O2) yields in the low linear energy transfer (LET) radiolysis of liquid water at elevated temperatures between 25–350 °C. Our simulation model consisted of randomly irradiating water by single pulses of N incident protons of 300 MeV (LET ~ 0.3 keV/μm), which penetrate at the same time perpendicular to this water within the surface of a circle. The effect of dose rate was studied by varying N. Our simulations showed that, at any given temperature, the radical products decrease with increasing dose rate and, at the same time, the molecular products increase, resulting from an increase in the inter-track, radical-radical reactions. Using the kinetics of the decay of hydrated electrons at 25 and 350 °C, we determined a critical time (τc) for each value of N, which corresponds to the “onset” of dose-rate effects. For our irradiation model, τc was inversely proportional to N for the two temperatures considered, with τc at 350 °C being shifted by an order of magnitude to shorter times compared to its values at 25 °C. Finally, the data obtained from the simulations for N = 2,000 generally agreed with the observation that during the track stage of the radiolysis, free radical yields increase, while molecular products decrease with increasing temperature from 25 to 350 °C. The exceptions of e-aq and H2 to this general pattern are briefly discussed.


1993 ◽  
Vol 316 ◽  
Author(s):  
R.J. Matyi ◽  
D.L. Chapek ◽  
J.R. Conrad ◽  
S.B. Felch

ABSTRACTWe have used high resolution x-ray diffraction to analyze the structural changes that accompany boron doping of silicon by BF3 plasma source ion implantation (PSII). Triple crystal diffraction analysis of as-implanted PSII doped silicon showed little excess x-ray diffuse scattering, even when analyzed using the asymmetric (113) reflection for increased surface sensitivity. This result suggests that PSΠ is capable of providing high dose implantation with low damage. Annealing of the PSII-doped silicon showed the development of a compressive surface layer, indicated by enhanced x-ray scattering directed perpendicular to the surface. Virtually all of the scattering from the annealed samples was concentrated in the so-called “surface streak” which arises due to dynamical diffraction from the perfect crystal Si structure. Little if any diffuse scattering due to kinematic scattering from crystal defects was detected. These observations indicate that plasma source doping can be used to achieve both a shallow implant depth and an extremely uniform incorporation of boron into the silicon lattice.


1994 ◽  
Vol 354 ◽  
Author(s):  
Jiqun Shao ◽  
Eaton Corporation ◽  
Shu Qin ◽  
Zhuofan Zhao ◽  
Chung Chan

AbstractA general relation between the implanted dose and the processing time for plasma immersion ion implantation (PHI) can be established through the dynamic sheath model. In practice, etching and charging effects have to be taken into account in PIII dose estimation.Plasma immersion ion implantation (PII) has been tested in fabrication of semiconductor devices with shallow junctions and in hydrogénation of poly-Si thin film transistors (TFT). PIII doping is more suitable than conventional implantation for such applications because of its high dose rate at lower energy. Since the dose rate in PIII does not depend on the area being treated, the effective current will be higher if a larger implanted area is involved. However, the relation between dose and time is not always straightforward. During PIII processing possible etching and charging will affect the total accumulated doses. This paper presents a model for each which allows a proper compensation to be performed.


1990 ◽  
Vol 201 ◽  
Author(s):  
A. Claverie ◽  
A. Roumili ◽  
N. Gessinn ◽  
J. Beauvillain

AbstractIn this work, we have observed by cross-sectional electron microscopy (XTEM) and high resolution electron microscopy (HREM) the kinetics of silicon amorphization during nitrogen and helium bombardments for various dose rates and substrate temperatures. It is shown that the progression of the cla interfaces can be accurately described by the “Critical Damage Energy Density” (CDED) model for both ions at 100°K. At this temperature however, dose rate effects are unimportant. When increasing the substrate temperature up to 300°K, the amorphization efficiency is lowered. At 300°K dose rate effects are important and we show that for higher dose rates, the efficiency of the amorphization process is improved. In this case, the amorphous layers created by helium implantation are situated in the near surface region in apparent contradiction with damage calculations. The present experimental study demonstrates the competition which exists between the generation rate of point defects and the anihilation rate of these defects. Therefore, it is shown that the position of the a-layers created by light ion implantation at room temperature can be predicted by using a three-dimensional damage energy calculation.


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