Investigation on electron and hole transport properties using the full-band spherical-harmonics expansion method

1998 ◽  
Vol 45 (9) ◽  
pp. 2010-2017 ◽  
Author(s):  
S. Reggiani ◽  
M.C. Vecchi ◽  
M. Rudan
Keyword(s):  
Transport Properties ◽  
Spherical Harmonics ◽  
Expansion Method ◽  
Hole Transport ◽  
Full Band ◽  
Spherical Harmonics Expansion

Full-band transport properties of silicon dioxide using the spherical-harmonics expansion of the BTE

2002 ◽  
Vol 314 (1-4) ◽  
pp. 193-197 ◽  
Author(s):  
Elena Gnani ◽  
Susanna Reggiani ◽  
Massimo Rudan
Keyword(s):  
Silicon Dioxide ◽  
Transport Properties ◽  
Spherical Harmonics ◽  
Full Band ◽  
Spherical Harmonics Expansion

scholarly journals Temperature Dependence of the Electron and Hole Scattering Mechanisms in Silicon Analyzed through a Full-Band, Spherical-Harmonics Solution of the BTE

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 361-365 ◽  
Author(s):  
Susanna Reggiani ◽  
Maria Cristina Vecchi ◽  
Massimo Rudan
Keyword(s):  
Temperature Dependence ◽  
Spherical Harmonics ◽  
Hole Mobility ◽  
Scattering Mechanisms ◽  
Mobility Data ◽  
Number Of Factors ◽  
Wide Range ◽  
Full Band ◽  
Spherical Harmonics Expansion ◽  
Full Band Structure

By adopting the solution method for the BTE based on the spherical-harmonics expansion (SHE) [1], and using the full-band structure for both the electron and valence band of silicon [2], the temperature dependence of a number of scattering mechanisms has been modeled and implemented into the code HARM performing the SHE solution. Comparisons with the experimental mobility data show agreement over a wide range of temperatures. The analysis points out a number of factors from which the difficulties encountered in earlier investigations seemingly originate, particularly in the case of hole mobility.

scholarly journals A review of recent advances in the spherical harmonics expansion method for semiconductor device simulation

2016 ◽  
Vol 15 (3) ◽  
pp. 939-958 ◽  
Author(s):  
K. Rupp ◽  
C. Jungemann ◽  
S.-M. Hong ◽  
M. Bina ◽  
T. Grasser ◽  
...  
Keyword(s):  
Spherical Harmonics ◽  
Semiconductor Device ◽  
Device Simulation ◽  
Expansion Method ◽  
Semiconductor Device Simulation ◽  
Recent Advances ◽  
Spherical Harmonics Expansion

A Deterministic Boltzmann Equation Solver Based on a Higher Order Spherical Harmonics Expansion With Full-Band Effects

2010 ◽  
Vol 57 (10) ◽  
pp. 2390-2397 ◽  
Author(s):  
Sung-Min Hong ◽  
Gregor Matz ◽  
Christoph Jungemann
Keyword(s):  
Boltzmann Equation ◽  
Spherical Harmonics ◽  
Higher Order ◽  
Full Band ◽  
Spherical Harmonics Expansion
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