A simple and effective load-pull system for RF power transistor large-signal measurements for wireless communication power amplifier design

1997 ◽  
Vol 46 (5) ◽  
pp. 1150-1155 ◽  
Author(s):  
Cheng-Yung Chiang ◽  
Huey-Ru Chuang
Keyword(s):  
Wireless Communication ◽  
Power Amplifier ◽  
Rf Power ◽  
Power Transistor ◽  
Large Signal ◽  
Pull System ◽  
Amplifier Design ◽  
Load Pull

scholarly journals 0.5 GHz-1.5 GHz Bandwidth 10W GaN HEMT RF Power Amplifier Design

2018 ◽  
Vol 8 (3) ◽  
pp. 1837
Author(s):  
Shiva Ghandi Isma Ilamaran ◽  
Zubaida Yusoff ◽  
Jahariah Sampe
Keyword(s):  
Power Amplifier ◽  
Communication Technology ◽  
Rf Power ◽  
Power Added Efficiency ◽  
Rf Power Amplifier ◽  
Gan Hemt ◽  
Input And Output ◽  
Flat Gain ◽  
Amplifier Design ◽  
Load Pull

With the current development in wireless communication technology, the need for a wide bandwith in RF power amplifier (RF PA) is an essential. In this paper, the design and simulation of 10W GaN HEMT wideband RF PA will be presented. The Source-Pull and Load-Pull technique was used to design the input and output matching network of the RF PA. From the simulation, the RF PA achieved a flat gain between 15dB to 17dB from 0.5GHz to 1.5GHz. At 1.5GHz, the drain efficiency is simulated to achieve 36% at the output power of 40 dBm while the power added efficiency (PAE) was found to be 28.2%.

A scalable GaN HEMT large-signal model for high-efficiency RF power amplifier design

2014 ◽  
Vol 28 (15) ◽  
pp. 1888-1895 ◽  
Author(s):  
Yuehang Xu ◽  
Wenli Fu ◽  
Changsi Wang ◽  
Chunjiang Ren ◽  
Haiyan Lu ◽  
...  
Keyword(s):  
Power Amplifier ◽  
High Efficiency ◽  
Rf Power ◽  
Large Signal ◽  
Signal Model ◽  
Rf Power Amplifier ◽  
Gan Hemt ◽  
Amplifier Design

scholarly journals Improvement of Small Signal Equivalent Simulations for Power and Efficiency Matching of GaN HEMTs

Electronics ◽  
2021 ◽  
Vol 10 (3) ◽  
pp. 263
Author(s):  
Roberto Quaglia
Keyword(s):  
Power Amplifier ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Large Signal ◽  
Signal Model ◽  
Or Efficiency ◽  
Summary Table ◽  
Matching Networks ◽  
Amplifier Design ◽  
Frequency Power

In high-frequency power-amplifier design, it is common practice to approach the design of reactive matching networks using linear simulators and targeting a reflection loss limit (referenced to the target impedance). It is well known that this is only a first-pass design technique, since output power or efficiency contours do not correspond to mismatch circles. This paper presents a method to improve the accuracy of this approach in the case of matching network design for power amplifiers based on gallium nitride (GaN) technology. Equivalent mismatch circles, which lay within the power or efficiency contours targeted by the design, are analytically obtained thanks to geometrical considerations. A summary table providing the parameters to use for typical contours is provided. The technique is demonstrated on two examples of power-amplifier design on the 6–12 GHz band using the non-linear large-signal model of a GaN High Electron Mobility Transistor (HEMT).

scholarly journals Broadband Performance Assessment of an RF Power Transistor Employing the Real Frequency Technique

2022 ◽  
Author(s):  
siddik yarman
Keyword(s):  
Numerical Procedure ◽  
Rf Power ◽  
Power Performance ◽  
Power Transistor ◽  
Gain Bandwidth ◽  
Active Device ◽  
Power Added Efficiency ◽  
Real Frequency ◽  
The Given ◽  
Load Pull

selected active device is essential to design an RF power amplifier for optimum gain and power added efficiency. As they are obtained, these impedances may not be realizable network functions over the desired frequency band to yield the input and the output matching networks for the amplifier. Therefore, in this paper, first, we introduce a new method to test if a given impedance is realizable. Then, a novel “Real Frequency Line Segment Technique” based numerical procedure is introduced to assess the gain-bandwidth limitations of the given source and load impedances, which in turn results in the ultimate RF-power intake/ delivering performance of the amplifier. During the numerical performance assessments process, a robust tool called “Virtual Gain Optimization” is presented. Finally, a new definition called “Power-Performance-Product” is introduced to measure the quality of an active device. Examples are presented to test the realizability of the given source/load pull data and to assess the gain-bandwidth limitations of the given source/load pull impedances for a 45W-GaN power transistor, namely “Cree CG2H40045”, over 0.8 -3.8 GHz bandwidth.

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