Coercivity and frequency dependence of track widths and erase bands in thin film media

1998 ◽  
Vol 34 (4) ◽  
pp. 1546-1548 ◽  
Author(s):  
L. Mei ◽  
M.E. Schabes ◽  
N.H. Yeh
2014 ◽  
Vol 909 ◽  
pp. 58-62 ◽  
Author(s):  
Kyohei Nishimoto ◽  
Kozo Taguchi

We propose fabrication method of a planar quadrupole microelectrode for dielectrophoresis (DEP), which is fabricated by Au thin-film, ion coater and box cutter. This method is more cost effective and simpler than previous existing methods. We conducted two experiments for confirming usefulness of the Au DEP chip. Those are separation of yeast cells and trap force of DEP. To separate yeast cells, we used viable and non-viable cells. DEP force arises when an inhomogeneous AC electric field and sine wave frequency were applied to microelectrode. The Au DEP chip is able to distinguish between viable and non-viable cells and separate them by frequency dependence and the flow with Syringe pump. The chip can obtain viable cells which were trapped without contact to the microelectrode. The viable cells can use for fusion or cell culture. Furthermore, we carried out another experiment to investigate the trap force. The trap force of Negative-DEP becomes gradually weak when the frequency increases with 0.1, 0.5 and 1MHz. We were able to confirm relation between trap force and frequency by the Au DEP chip. The trap force has frequency dependence. Through the two experiments, we have established usefulness of the Au DEP chip.


1971 ◽  
Vol 49 (3) ◽  
pp. 296-301 ◽  
Author(s):  
J. M. Perz ◽  
W. A. Roger

The attenuation due to interaction with conduction electrons of longitudinal sound propagating along [110] in a Ta crystal of resistance ratio 390 has been measured over the frequency range 0.46 to 1.0 GHz. The product of the wave vector q and the electronic mean free path l determined from the frequency dependence of the normal state attenuation ranges over 1.8 < ql < 3.8. The attenuation in the superconducting state in the absence of a magnetic field fits the BCS expression for 1.2 < T < Tc = 4.46 K with 2Δ(0) = 3.62 ± 0.06 kTc. The ultrasonic waves have been generated by thin film CdS transducers, and the conversion efficiency has been found to vary inversely with the active area of the transducer.


1996 ◽  
Vol 446 ◽  
Author(s):  
Hong Wang ◽  
S. X. Shang ◽  
X. J. Su ◽  
Z. Wang ◽  
M. Wang

AbstractInsulating thin films of Bi2Ti2O7 with (111) orientation have been prepared on silicon (100)–substrates at a temperature range of 480–550 °C by a MOCVD technique. The dielectric and C‐V properties were studied. The dielectric constant (ɛ) and loss tangent (tanδ) were found to be 180 and 0.01, respectively. The temperature and frequency dependence of dielectric constant were also measured. The Bi2Ti2O7 films are suitable to be used as a novel buffer layer and new insulating gate material in FET devices.


2015 ◽  
Vol 475 ◽  
pp. 10-13
Author(s):  
A. Markov ◽  
E. Hollmann ◽  
A. Tumarkin ◽  
A. Kozyrev ◽  
R. Wördenweber

Sensors ◽  
2021 ◽  
Vol 21 (15) ◽  
pp. 5151
Author(s):  
Nikita A. Buznikov ◽  
Galina V. Kurlyandskaya

Magnetoimpedance (MI) biosensors for the detection of in-tissue incorporated magnetic nanoparticles are a subject of special interest. The possibility of the detection of the ferrogel samples mimicking the natural tissues with nanoparticles was proven previously for symmetric MI thin-film multilayers. In this work, in order to describe the MI effect in non-symmetric multilayered elements covered by ferrogel layer we propose an electromagnetic model based on a solution of the 4Maxwell equations. The approach is based on the previous calculations of the distribution of electromagnetic fields in the non-symmetric multilayers further developed for the case of the ferrogel covering. The role of the asymmetry of the film on the MI response of the multilayer–ferrogel structure is analyzed in the details. The MI field and frequency dependences, the concentration dependences of the MI for fixed frequencies and the frequency dependence of the concentration sensitivities are obtained for the detection process by both symmetric and non-symmetric MI structures.


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