An MOS transistor model for RF IC design valid in all regions of operation

2002 ◽  
Vol 50 (1) ◽  
pp. 342-359 ◽  
Author(s):  
C. Enz
Keyword(s):  
Ic Design ◽  
Mos Transistor ◽  
Transistor Model ◽  
Rf Ic

scholarly journals MOS transistor modeling for RF IC design

2000 ◽  
Vol 35 (2) ◽  
pp. 186-201 ◽  
Author(s):  
C. Enz ◽  
Y. Cheng
Keyword(s):  
Ic Design ◽  
Mos Transistor ◽  
Rf Ic

Monolithic transformers for silicon RF IC design

2000 ◽  
Vol 35 (9) ◽  
pp. 1368-1382 ◽  
Author(s):  
J.R. Long
Keyword(s):  
Ic Design ◽  
Rf Ic

REL-MOS—A Reliability-Aware MOS Transistor Model

2019 ◽  
Vol 66 (1) ◽  
pp. 60-65 ◽  
Author(s):  
Theodor Hillebrand ◽  
Steffen Paul ◽  
Dagmar Peters-Drolshagen
Keyword(s):  
Mos Transistor ◽  
Transistor Model

A MOS Transistor Model for Mixed Analog-digital Circuit Design and Simulation

2006 ◽  
pp. 49-95 ◽  
Author(s):  
Matthias Bucher ◽  
Christophe Lallement ◽  
François Krummenacher ◽  
Christian Enz
Keyword(s):  
Circuit Design ◽  
Digital Circuit ◽  
Mos Transistor ◽  
Digital Circuit Design ◽  
Transistor Model

Performance Analysis of Interconnects Based on Carbon Nanotubes for AMS/RF IC Design

2015 ◽  
pp. 336-363 ◽  
Author(s):  
Rafael Vargas-Bernal
Keyword(s):  
Carbon Nanotubes ◽  
Performance Analysis ◽  
Integrated Circuit ◽  
High Speed ◽  
Electrical Current ◽  
Essential Elements ◽  
Thermal Dissipation ◽  
Electrical Performance ◽  
Ic Design ◽  
Rf Ic

Electrical interconnects are essential elements to transmit electrical current and/or to apply electrical voltage to the electronic devices found in an integrated circuit. With the introduction of carbon nanotubes in electronic applications, efficient and high-speed interconnects have allowed for optimizing the electrical performance of the integrated circuits. Additionally, technical problems, such as electromigration, large values of parasitic elements, large delays, and high thermal dissipation, presented in metallic interconnects based on copper, can be avoided. This chapter presents a performance analysis of interconnects used in AMS/RF IC design based on carbon nanotubes as the physical material where electrical variables are provided.

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