Radiation response of amorphous silicon imaging arrays at diagnostic energies

1994 ◽  
Vol 41 (4) ◽  
pp. 1500-1505 ◽  
Author(s):  
L.E. Antonuk ◽  
J.H. Siewerdsen ◽  
J. Yorkston ◽  
W. Huang
Keyword(s):  
Amorphous Silicon ◽  
Radiation Response ◽  
Imaging Arrays

scholarly journals Radiation Tolerance in Nano-Structured Crystalline Fe(Cr)/Amorphous SiOC Composite

Crystals ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 147
Author(s):  
Qing Su ◽  
Tianyao Wang ◽  
Lin Shao ◽  
Michael Nastasi
Keyword(s):  
Amorphous Silicon ◽  
Grain Growth ◽  
Irradiation Dose ◽  
Room Temperature ◽  
Silicon Oxycarbide ◽  
Radiation Response ◽  
Radiation Tolerance ◽  
Width Direction ◽  
Cr Film ◽  
Radiation Tolerant

The management of irradiation defects is one of key challenges for structural materials in current and future reactor systems. To develop radiation tolerant alloys for service in extreme irradiation environments, the Fe self-ion radiation response of nanocomposites composed of amorphous silicon oxycarbide (SiOC) and crystalline Fe(Cr) were examined at 10, 20, and 50 displacements per atom damage levels. Grain growth in width direction was observed to increase with increasing irradiation dose in both Fe(Cr) films and Fe(Cr) layers in the nanocomposite after irradiation at room temperature. However, compared to the Fe(Cr) film, the Fe(Cr) layers in the nanocomposite exhibited ~50% less grain growth at the same damage levels, suggesting that interfaces in the nanocomposite were defect sinks. Moreover, the addition of Cr to α-Fe was shown to suppress its grain growth under irradiation for both the composite and non-composite case, consistent with earlier molecular dynamic (MD) modeling studies.

Photoresponse Linearity of a-Si:H Imaging Pixels

1993 ◽  
Vol 297 ◽  
Author(s):  
J. Yorkston ◽  
L.E. Antonuk ◽  
W. Huang ◽  
R.A. Street
Keyword(s):  
Amorphous Silicon ◽  
Bias Voltage ◽  
Linear Response ◽  
Reverse Bias ◽  
Reverse Bias Voltage ◽  
Imaging Arrays ◽  
Low Contrast ◽  
X Ray

Amorphous silicon imaging arrays with ∼3×105 pixels have recently been developed and x-ray images of low contrast anatomical phantoms have been demonstrated. This paper reports on the linearity of response of these a-Si:H imaging pixels as a function of reverse bias voltage. The fraction of the imaging pixel's full signal range that maintains a linear response has been found to increase with increasing voltage.

Laser Processing of Amorphous Silicon for Polysilicon Devices, Circuits and Flat-Panel Imagers

2000 ◽  
Vol 609 ◽  
Author(s):  
J. B. Boyce ◽  
R. T. Fulks ◽  
J. Ho ◽  
J. P. Lu ◽  
P. Mei ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Laser Processing ◽  
Flat Panel ◽  
Leakage Currents ◽  
Imaging Arrays ◽  
Materials Properties ◽  
Spatial Uniformity ◽  
Sharp Turn ◽  
Flat Panel Imaging ◽  
Flat Panel Imagers

ABSTRACTPulsed excimer-laser processing of amorphous silicon on non-crystalline substrates allows for the fabrication of high-quality polysilicon thin-film transistors (TFTs). It also provides procedures for doping self-aligned amorphous silicon TFTs. In addition, laser-crystallized polysilicon exhibits some interesting materials properties, such as, large lateral grain growth with a corresponding enhancement in the electron mobility. Under optimized processing conditions, excellent polysilicon TFTs with high mobilities, sharp turn on, low off-state leakage currents and good spatial uniformity have been achieved. These improved parameters, particularly the low off-state leakage currents and good uniformity, enable not only displays but also the moredemanding flat-panel imaging arrays to be fabricated in polysilicon. Results on both polysilicon CMOS circuits and a polysilicon flat-panel imager are presented.

Radiation response characteristics of amorphous silicon arrays for megavoltage radiotherapy imaging

1992 ◽  
Vol 39 (4) ◽  
pp. 1069-1073 ◽  
Author(s):  
L.E. Antonuk ◽  
J. Yorkston ◽  
W. Huang ◽  
J. Boudry ◽  
E.J. Morton ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Radiation Response ◽  
Response Characteristics ◽  
Silicon Arrays

Large Area 2-Dimensional a-Si:H Imaging Arrays

1992 ◽  
Vol 258 ◽  
Author(s):  
R. A. Street ◽  
I. Fujieda ◽  
R. Weisfield ◽  
S. Nelson ◽  
P. Nylen
Keyword(s):  
Visible Light ◽  
Amorphous Silicon ◽  
Electronic Noise ◽  
X Rays ◽  
Two Dimensional ◽  
Electronic Document ◽  
Dangling Bond ◽  
Large Area ◽  
Imaging Arrays ◽  
Array Performance

ABSTRACTSix inch diagonal, two-dimensional amorphous silicon imaging arrays with 256×240 pixels of 450 micron pitch have been fabricated. Examples of images made under visible light and X-rays illustrate applications to electronic document input and medical imaging. The limits to the array performance are explored through studies of image lag due to deep trapping at dangling bond defects in the a-Si:H sensor, and through measurements of electronic noise.

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