Uncooled InAs-GaSb type-II infrared detectors grown on GaAs substrates for the 8-12-μm atmospheric window

1999 ◽  
Vol 35 (7) ◽  
pp. 1041-1044 ◽  
Author(s):  
H. Mohseni ◽  
J. Wojkowski ◽  
M. Razeghi ◽  
G. Brown ◽  
W. Mitchel
Keyword(s):  
Infrared Detectors ◽  
Type Ii ◽  
Gaas Substrates ◽  
Atmospheric Window

scholarly journals InAs/InAsSb Strain-Balanced Superlattices for Longwave Infrared Detectors

Sensors ◽  
2019 ◽  
Vol 19 (8) ◽  
pp. 1907 ◽  
Author(s):  
Tetiana Manyk ◽  
Krystian Michalczewski ◽  
Krzysztof Murawski ◽  
Piotr Martyniuk ◽  
Jaroslaw Rutkowski
Keyword(s):  
Wave Function ◽  
Infrared Detectors ◽  
Theoretical Calculations ◽  
Spectral Response ◽  
Health Condition ◽  
Type Ii ◽  
Response Characteristics ◽  
Effective Masses ◽  
Gaas Substrates ◽  
The Stability

The InAs/InAsSb type-II superlattices (T2SLs) grown on a GaSb buffer layer and GaAs substrates were theoretically investigated. Due to the stability at high operating temperatures, T2SLs could be used for detectors operating in the longwave infrared (LWIR) range for different sensors to include, e.g., CH4 and C2H6 detection, which is very relevant for health condition monitoring. The theoretical calculations were carried out by the 8 × 8 k·p method. The estimated electrons and heavy holes probability distribution in a InAs/InAsSb superlattice (SL) shows that the wave function overlap increases while the thickness of the SL period decreases. The change in the effective masses for electrons and holes versus the SL period thickness for the kz-direction of the Brillouin zone is shown. The structures with a period lower than 15 nm are more optimal for the construction of LWIR detectors based on InAs/InAsSb SLs. The experimental results of InAs/InAsSb T2SLs energy bandgap were found to be comparable with the theoretical one. The proper fitting of theoretically calculated and experimentally measured spectral response characteristics in terms of a strain-balanced and unbalanced structures is shown.

Low-Lattice-Strain Long-Wavelength GaAsSb/GaInAs Type-II Quantum Wells Grown on GaAs Substrates

2002 ◽  
Vol 41 (Part 2, No. 10A) ◽  
pp. L1040-L1042 ◽  
Author(s):  
Makoto Kudo ◽  
Kiyoshi Ouchi ◽  
Jun-ichi Kasai ◽  
Tomoyoshi Mishima
Keyword(s):  
Quantum Wells ◽  
Lattice Strain ◽  
Type Ii ◽  
Long Wavelength ◽  
Gaas Substrates ◽  
Type Ii Quantum Wells

Development of InAs/InAsSb Type II Strained-Layer Superlattice Unipolar Barrier Infrared Detectors

2019 ◽  
Vol 48 (10) ◽  
pp. 6145-6151 ◽  
Author(s):  
David Z. Ting ◽  
Alexander Soibel ◽  
Arezou Khoshakhlagh ◽  
Sam A. Keo ◽  
Sir B. Rafol ◽  
...  
Keyword(s):  
Infrared Detectors ◽  
Type Ii ◽  
Strained Layer ◽  
Unipolar Barrier ◽  
Strained Layer Superlattice

Sulfide treatment passivation of mid-/long-wave dual-color infrared detectors based on type-II InAs/GaSb superlattices

2019 ◽  
Vol 51 (3) ◽  
Author(s):  
Chunyan Guo ◽  
Zhi Jiang ◽  
Dongwei Jiang ◽  
Guowei Wang ◽  
Yingqiang Xu ◽  
...  
Keyword(s):  
Infrared Detectors ◽  
Type Ii ◽  
Long Wave ◽  
Dual Color

InAs/Ga(In)Sb type-II superlattices short/middle dual color infrared detectors

2015 ◽  
Author(s):  
Yanli Shi ◽  
Rui Hu ◽  
Gongrong Deng ◽  
Wenjing He ◽  
Jiangmin Feng ◽  
...  
Keyword(s):  
Infrared Detectors ◽  
Type Ii ◽  
Dual Color ◽  
Type Ii Superlattices

High Operating Temperature Type-II Superlattice Mid-Infrared Detectors

2020 ◽  
Author(s):  
Sarath Gunapala ◽  
David Ting ◽  
Alexander Soibel ◽  
Arezou Khoshakhlagh ◽  
Sir Rafol ◽  
...  
Keyword(s):  
Infrared Detectors ◽  
Operating Temperature ◽  
Type Ii ◽  
Mid Infrared ◽  
High Operating Temperature ◽  
Type Ii Superlattice

Defect density reduction in InAs/GaSb type II superlattice focal plane array infrared detectors

2011 ◽  
Author(s):  
Martin Walther ◽  
Robert Rehm ◽  
Johannes Schmitz ◽  
Jasmin Niemasz ◽  
Frank Rutz ◽  
...  
Keyword(s):  
Focal Plane ◽  
Infrared Detectors ◽  
Defect Density ◽  
Focal Plane Array ◽  
Type Ii ◽  
Type Ii Superlattice ◽  
Density Reduction
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