Gallium-arsenide E- and D-MESFET device noise characteristics operated at cryogenic temperatures with ultralow drain current

1988 ◽  
Vol 9 (5) ◽  
pp. 238-240 ◽  
Author(s):  
R.N. Sato ◽  
M. Sokolich ◽  
N. Doudoumopoulos ◽  
J.R. Duffey
Keyword(s):  
Gallium Arsenide ◽  
Drain Current ◽  
Cryogenic Temperatures ◽  
Noise Characteristics ◽  
Device Noise

Noise test method for dual-gate MOSFET device

2019 ◽  
Vol 33 (31) ◽  
pp. 1950387
Author(s):  
Xiaofei Jia ◽  
Wenhao Chen ◽  
Bing Ding ◽  
Liang He
Keyword(s):  
Shot Noise ◽  
Thermal Noise ◽  
Drain Current ◽  
Test Method ◽  
Current Noise ◽  
Electronic Components ◽  
Positive Role ◽  
Noise Characteristics ◽  
20 Nm ◽  
Device Noise

In recent years, with the development of mesoscopic physics and nanoelectronics, the research on noise and testing technology of electronic components has been developed. It is well known that noise can characterize the transmission characteristics of carriers in nanoscale electronic components. With the continuous shrinking of the device size, the carrier transport of nanoscale MOSFET devices has been gradually transformed from the traditional drift-diffusion to become the quasi-ballistic or ballistic transport, and its current noise contains granular and thermal noise. The paper by Jeon et al. [The first observation of shot noise characteristics in 10-nm scale MOSFETs, in Proc. 2009 Symp. VLSI Technology (IEEE, Honolulu, 2009), pp. 48–49] presents the variation relation of 20 nm MOSFET current noise with source–drain current and voltage, and its current noise characteristic is between thermal noise and shot noise, so 20 nm MOSFET current noise is shot noise and thermal noise. The paper by Navid et al. [J. Appl. Phys. 101 (2007) 124501] shows through simulation that the 60 nm MOSFET current noise is suppressed shot noise and thermal noise. At present, the current noise has seriously affected the basic performance of the device, thus the circuit cannot work normally. Therefore, it is necessary to study the generation mechanism and characteristics of current noise in electronic components so as to suppress device noise, which can not only realize the reduction of device noise, but also play a positive role in the work-efficiency, life-span and reliability of electronic components.

1/f Noise Behavior in Pentacene Organic Thin Film Transistors

1999 ◽  
Vol 598 ◽  
Author(s):  
P. V. Necliudov ◽  
D. J. Gundlach ◽  
T. N. Jackson ◽  
S. L. Rumyantsev ◽  
M. S. Shur
Keyword(s):  
Thin Film ◽  
Conducting Polymers ◽  
Thin Film Transistors ◽  
Low Frequency ◽  
Drain Current ◽  
Frequency Noise ◽  
Organic Thin Film ◽  
Amorphous Si ◽  
Parameter Values ◽  
Device Noise

ABSTRACTWe studied the low frequency noise in top-contact pentacene Thin Film Transistors (TFTs). The relative spectral noise density of the drain current fluctuations SI/I2 had a form of 1/f noise in the measured frequency range 1Hz - 3.5kHz.Our studies of the noise dependencies on the gate-source VGS and drain-source VDS voltages showed that the dependencies differed from those observed for conducting polymers and resembled those reported for crystalline Si n-MOSFETs.To compare the device noise level with those of other devices and materials, we extracted the Hooge parameter α. In order to calculate the total number of carriers we used a model simulating the device DC characteristics, similar to that for amorphous Si TFTs. The extracted Hooge parameter was 0.04. For an organic material this is an extremely small value, which is three orders of magnitude smaller that the Hooge parameter values reported for conducting polymers and only several times higher than the values for amorphous Si TFTs.

1/fγ DRAIN CURRENT NOISE MODEL IN ULTRATHIN OXIDE MOSFETS

2004 ◽  
Vol 04 (02) ◽  
pp. L297-L307 ◽  
Author(s):  
JONGHWAN LEE ◽  
GIJS BOSMAN
Keyword(s):  
Drain Current ◽  
Trapping Efficiency ◽  
Doping Profile ◽  
Noise Model ◽  
Current Noise ◽  
Device Structure ◽  
Processing Technologies ◽  
New Device ◽  
Noise Characteristics ◽  
Ultrathin Oxide

A 1/fγ drain current noise model for deep-submicron MOSFETs with ultrathin oxide is presented. Based on the number and correlated mobility fluctuation mechanisms, the model is derived incorporating a tunneling assisted-thermally activated process and a more realistic trap distribution inside the gate oxide layer. The effects of the device structure and processing technologies on the noise characteristics are taken into consideration through a quadratic mobility degradation factor, a parasitic resistance, a doping profile, and trap-related parameters. For ultrathin oxide MOSFETs, the trapping efficiency ratio and the scattering rate are expressed in terms of the trap distance and the inversion carrier density, enabling an accurate prediction of the noise behavior. From quantitative results simulated with extracted data, it is shown that the new model is applicable to design future CMOS devices and new device processing technologies, and is suitable to be implemented in circuit simulators.

IMPACT OF GATE POLYSILICON INTERFACE ON CARRIER TRAPPING LOW FREQUENCY NOISE IN ADVANCED MOSFET'S

2006 ◽  
Vol 06 (04) ◽  
pp. L427-L432 ◽  
Author(s):  
G. GHIBAUDO ◽  
J. JOMAAH ◽  
F. BALESTRA
Keyword(s):  
Noise Analysis ◽  
Low Frequency ◽  
Drain Current ◽  
Oxide Thickness ◽  
Frequency Noise ◽  
Oxide Interface ◽  
Carrier Trapping ◽  
Noise Characteristics ◽  
Input Gate ◽  
The Impact

In this work, we calculate, for the first time, the impact of carrier trapping at the gate polysilicon/oxide interface on the LF noise characteristics of polygate MOSFET's. After extending the channel LF noise analysis, based on carrier number and correlated mobility fluctuations approaches, to include charge variations at the polySi/oxide interface, we derive analytical expressions accounting for the impact of fluctuations of poly/oxide interfacial charge on the channel drain current and input gate voltage noise as a function of gate bias, polysilicon doping concentration and gate oxide thickness.

scholarly journals AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics

Micromachines ◽  
2020 ◽  
Vol 11 (12) ◽  
pp. 1131
Author(s):  
Justinas Jorudas ◽  
Artūr Šimukovič ◽  
Maksym Dub ◽  
Maciej Sakowicz ◽  
Paweł Prystawko ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Hybrid Material ◽  
Low Frequency ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
Frequency Noise ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
Noise Characteristics ◽  
Noise Measurements

We report on the high-voltage, noise, and radio frequency (RF) performances of aluminium gallium nitride/gallium nitride (AlGaN/GaN) on silicon carbide (SiC) devices without any GaN buffer. Such a GaN–SiC hybrid material was developed in order to improve thermal management and to reduce trapping effects. Fabricated Schottky barrier diodes (SBDs) demonstrated an ideality factor n at approximately 1.7 and breakdown voltages (fields) up to 780 V (approximately 0.8 MV/cm). Hall measurements revealed a thermally stable electron density at N2DEG = 1 × 1013 cm−2 of two-dimensional electron gas in the range of 77–300 K, with mobilities μ = 1.7 × 103 cm2/V∙s and μ = 1.0 × 104 cm2/V∙s at 300 K and 77 K, respectively. The maximum drain current and the transconductance were demonstrated to be as high as 0.5 A/mm and 150 mS/mm, respectively, for the transistors with gate length LG = 5 μm. Low-frequency noise measurements demonstrated an effective trap density below 1019 cm−3 eV−1. RF analysis revealed fT and fmax values up to 1.3 GHz and 6.7 GHz, respectively, demonstrating figures of merit fT × LG up to 6.7 GHz × µm. These data further confirm the high potential of a GaN–SiC hybrid material for the development of thin high electron mobility transistors (HEMTs) and SBDs with improved thermal stability for high-frequency and high-power applications.

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