Broad-bandwidth, high-responsivity intermediate growth temperature GaAs MSM photodetectors

1995 ◽  
Vol 7 (12) ◽  
pp. 1483-1485 ◽  
Author(s):  
B.C. Tousley ◽  
N. Davids ◽  
A.H. Sayles ◽  
A. Paolella ◽  
P. Cooke ◽  
...  
Keyword(s):  
Growth Temperature ◽  
Broad Bandwidth ◽  
Intermediate Growth ◽  
High Responsivity ◽  
Msm Photodetectors

Single Si nanowire (diameter ≤ 100 nm) based polarization sensitive near-infrared photodetector with ultra-high responsivity

Nanoscale ◽  
2014 ◽  
Vol 6 (19) ◽  
pp. 11232-11239 ◽  
Author(s):  
K. Das ◽  
S. Mukherjee ◽  
S. Manna ◽  
S. K. Ray ◽  
A. K. Raychaudhuri
Keyword(s):  
Near Infrared ◽  
Silicon Nanowire ◽  
Exciting Light ◽  
Infrared Photodetector ◽  
Zero Bias ◽  
Nanowire Diameter ◽  
Si Nanowire ◽  
High Responsivity ◽  
Infra Red ◽  
Msm Photodetectors

Single silicon nanowire-based MSM photodetectors show ultra high responsivity (>104 A W−1) in the near-infra-red region, even at zero bias. The observed photoresponse is sensitive to the polarization of the exciting light, allowing the device to act as a polarization-dependent photodetector.

High-responsivity InGaAs MSM photodetectors with semi-transparent Schottky contacts

1995 ◽  
Vol 7 (11) ◽  
pp. 1333-1335 ◽  
Author(s):  
Rong-Hen Yuang ◽  
Jen-Inn Chyi ◽  
Yi-Jen Chan ◽  
Wei Lin ◽  
Yuan-Kuang Tu
Keyword(s):  
Schottky Contacts ◽  
High Responsivity ◽  
Msm Photodetectors

Structure and Orientation of As Precipitates in LT-MBE Grown GaAs

1991 ◽  
Vol 49 ◽  
pp. 900-901 ◽  
Author(s):  
Alain Claverie ◽  
Zuzanna Liliental-Weber
Keyword(s):  
Transport Properties ◽  
Layer Thickness ◽  
Growth Temperature ◽  
Low Temperatures ◽  
Lattice Parameter ◽  
Crystalline Quality ◽  
Insulating Properties ◽  
Lt Gaas

GaAs layers grown by MBE at low temperatures (in the 200°C range, LT-GaAs) have been reported to have very interesting electronic and transport properties. Previous studies have shown that, before annealing, the crystalline quality of the layers is related to the growth temperature. Lowering the temperature or increasing the layer thickness generally results in some columnar polycrystalline growth. For the best “temperature-thickness” combinations, the layers may be very As rich (up to 1.25%) resulting in an up to 0.15% increase of the lattice parameter, consistent with the excess As. Only after annealing are the technologically important semi-insulating properties of these layers observed. When annealed in As atmosphere at about 600°C a decrease of the lattice parameter to the substrate value is observed. TEM studies show formation of precipitates which are supposed to be As related since the average As concentration remains almost unchanged upon annealing.

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