Self-powered ultraviolet MSM photodetectors with high responsivity enabled by lateral n+/n- homojunction from opposite polarity domains

2021 ◽  
Author(s):  
Chenyu Guo ◽  
Wei Guo ◽  
Yijun Dai ◽  
Houqiang Xu ◽  
Li Chen ◽  
...  
Keyword(s):  
Opposite Polarity ◽  
High Responsivity ◽  
Self Powered ◽  
Msm Photodetectors

Novel p-p Heterojunctions Self-Powered Broadband Photodetectors with Ultrafast Speed and High Responsivity

2017 ◽  
Vol 27 (38) ◽  
pp. 1703166 ◽  
Author(s):  
Pingping Yu ◽  
Kai Hu ◽  
Hongyu Chen ◽  
Lingxia Zheng ◽  
Xiaosheng Fang
Keyword(s):  
High Responsivity ◽  
Self Powered

Heterostructured TiO2/MgO nanowire arrays for self-powered UV photodetectors

RSC Advances ◽  
2016 ◽  
Vol 6 (89) ◽  
pp. 85951-85957 ◽  
Author(s):  
Shiming Ni ◽  
Qingjiang Yu ◽  
Yuewu Huang ◽  
Jianan Wang ◽  
Lin Li ◽  
...  
Keyword(s):  
Fast Response ◽  
Nanowire Arrays ◽  
Uv Photodetectors ◽  
High Responsivity ◽  
Spectral Selectivity ◽  
Self Powered

A heterostructured TiO2/MgO NWAs based UVPD exhibits a high responsivity and fast response, together with excellent spectral selectivity.

Single Si nanowire (diameter ≤ 100 nm) based polarization sensitive near-infrared photodetector with ultra-high responsivity

Nanoscale ◽  
2014 ◽  
Vol 6 (19) ◽  
pp. 11232-11239 ◽  
Author(s):  
K. Das ◽  
S. Mukherjee ◽  
S. Manna ◽  
S. K. Ray ◽  
A. K. Raychaudhuri
Keyword(s):  
Near Infrared ◽  
Silicon Nanowire ◽  
Exciting Light ◽  
Infrared Photodetector ◽  
Zero Bias ◽  
Nanowire Diameter ◽  
Si Nanowire ◽  
High Responsivity ◽  
Infra Red ◽  
Msm Photodetectors

Single silicon nanowire-based MSM photodetectors show ultra high responsivity (>104 A W−1) in the near-infra-red region, even at zero bias. The observed photoresponse is sensitive to the polarization of the exciting light, allowing the device to act as a polarization-dependent photodetector.

Self-powered broadband, high-detectivity and ultrafast photodetectors based on Pd-MoS2/Si heterojunctions

2016 ◽  
Vol 18 (2) ◽  
pp. 1131-1139 ◽  
Author(s):  
L. Z. Hao ◽  
W. Gao ◽  
Y. J. Liu ◽  
Y. M. Liu ◽  
Z. D. Han ◽  
...  
Keyword(s):  
Response Speed ◽  
High Responsivity ◽  
Self Powered

A self-powered photodetector based on a Pd-doped MoS2/Si heterojunction was fabricated. The device shows high detectivity, high responsivity, and an ultrafast response speed.

scholarly journals High-Responsivity Photovoltaic Photodetectors Based on MoTe2/MoSe2 van der Waals Heterojunctions

Crystals ◽  
2019 ◽  
Vol 9 (6) ◽  
pp. 315 ◽  
Author(s):  
Hao Luo ◽  
Bolun Wang ◽  
Enze Wang ◽  
Xuewen Wang ◽  
Yufei Sun ◽  
...  
Keyword(s):  
High Efficiency ◽  
Van Der Waals ◽  
Transition Metal Dichalcogenides ◽  
Optoelectronic Devices ◽  
Type Ii ◽  
Zero Bias ◽  
High Responsivity ◽  
Metal Dichalcogenides ◽  
Self Powered ◽  
Ultrafast Charge Transfer

Van der Waals heterojunctions based on transition metal dichalcogenides (TMDs) show promising potential in optoelectronic devices, due to the ultrafast separation of photoexcited carriers and efficient generation of the photocurrent. Herein, this study demonstrated a high-responsivity photovoltaic photodetector based on a MoTe2/MoSe2 type-II heterojunction. Due to the interlayer built-in potential, the MoTe2/MoSe2 heterojunction shows obvious photovoltaic behavior and its photoresponse can be tuned by the gate voltage due to the ultrathin thickness of the heterojunction. This self-powered photovoltaic photodetector exhibits an excellent responsivity of 1.5 A W−1, larger than previously reported TMDs-based photovoltaic photodetectors. Due to the high-efficiency separation of electron-hole pairs and ultrafast charge transfer, the light-induced on/off ratio of current switching is larger than 104 at zero bias, and the dark current is extremely low (~10−13 A). These MoTe2/MoSe2 type-II heterojunctions are expected to provide more opportunities for future nanoscale optoelectronic devices.

Realization of a self-powered ZnO MSM UV photodetector with high responsivity using an asymmetric pair of Au electrodes

2014 ◽  
Vol 2 (45) ◽  
pp. 9689-9694 ◽  
Author(s):  
Hong-Yu Chen ◽  
Ke-Wei Liu ◽  
Xing Chen ◽  
Zhen-Zhong Zhang ◽  
Ming-Ming Fan ◽  
...  
Keyword(s):  
Metal Structure ◽  
The Other ◽  
Interdigitated Electrode ◽  
Uv Photodetector ◽  
High Responsivity ◽  
Metal Semiconductor Metal ◽  
Self Powered

We demonstrate a novel ZnO self-powered photodetector based on the asymmetric metal-semiconductor-metal structure: one Au interdigitated electrode with wide fingers and the other one with narrow fingers.

Broad-bandwidth, high-responsivity intermediate growth temperature GaAs MSM photodetectors

1995 ◽  
Vol 7 (12) ◽  
pp. 1483-1485 ◽  
Author(s):  
B.C. Tousley ◽  
N. Davids ◽  
A.H. Sayles ◽  
A. Paolella ◽  
P. Cooke ◽  
...  
Keyword(s):  
Growth Temperature ◽  
Broad Bandwidth ◽  
Intermediate Growth ◽  
High Responsivity ◽  
Msm Photodetectors

High-performance self-powered deep ultraviolet photodetector based on MoS2/GaN p–n heterojunction

2018 ◽  
Vol 6 (2) ◽  
pp. 299-303 ◽  
Author(s):  
Ranran Zhuo ◽  
Yuange Wang ◽  
Di Wu ◽  
Zhenhua Lou ◽  
Zhifeng Shi ◽  
...  
Keyword(s):  
High Performance ◽  
Uv Light ◽  
High Sensitivity ◽  
Fast Response ◽  
Ultraviolet Photodetector ◽  
High Responsivity ◽  
Deep Ultraviolet ◽  
Deep Uv ◽  
Specific Detectivity ◽  
Self Powered

Self-powered MoS2/GaN p–n heterojunction photodetectors exhibited high sensitivity to deep-UV light with high responsivity, specific detectivity and fast response speeds.

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