A low-voltage rail-to-rail CMOS V-I converter

Author(s):  
Chung-Chih Hung ◽  
M. Ismail ◽  
K. Halonen ◽  
V. Porra
Keyword(s):  
2021 ◽  
Vol 11 (2) ◽  
pp. 19
Author(s):  
Francesco Centurelli ◽  
Riccardo Della Sala ◽  
Pietro Monsurrò ◽  
Giuseppe Scotti ◽  
Alessandro Trifiletti

In this paper, we present a novel operational transconductance amplifier (OTA) topology based on a dual-path body-driven input stage that exploits a body-driven current mirror-active load and targets ultra-low-power (ULP) and ultra-low-voltage (ULV) applications, such as IoT or biomedical devices. The proposed OTA exhibits only one high-impedance node, and can therefore be compensated at the output stage, thus not requiring Miller compensation. The input stage ensures rail-to-rail input common-mode range, whereas the gate-driven output stage ensures both a high open-loop gain and an enhanced slew rate. The proposed amplifier was designed in an STMicroelectronics 130 nm CMOS process with a nominal supply voltage of only 0.3 V, and it achieved very good values for both the small-signal and large-signal Figures of Merit. Extensive PVT (process, supply voltage, and temperature) and mismatch simulations are reported to prove the robustness of the proposed amplifier.


Author(s):  
Juan M. Carrillo ◽  
Raquel Perez-Aloe ◽  
Jose M. Valverde ◽  
J. Francisco Duque-Carrillo ◽  
Guido Torelli
Keyword(s):  

2001 ◽  
Vol 29 (4) ◽  
pp. 413-422 ◽  
Author(s):  
Giuseppe Ferri ◽  
Andrea Baschirotto
Keyword(s):  

Author(s):  
Lukas Nagy ◽  
Viera Stopjakova ◽  
Daniel Arbet ◽  
Miroslav Potocny ◽  
Martin Kovac

Author(s):  
Abderrezak Marzaki ◽  
V. Bidal ◽  
R. Laffont ◽  
W. Rahajandraibe ◽  
J-M. Portal ◽  
...  

This paper presents different low voltage adjustable CMOS Schmitt trigger using DCG-FGT transistor. Simple circuits are introduced to provide flexibility to program the hysteresic threshold in this paper. The hysteresis can be controlled accurately at a large voltage range. The proposed Schmitt trigger have been designed using 90nm 1.2V CMOS technology and simulated using Eldo with PSP device models. The simulation results show rail-to-rail operation and adjustable switching voltages <em>V<sub>TH- </sub></em>(low switching voltage) and <em>V<sub>TH+ </sub></em>(high switching voltage).


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