Three-phase Inverter for Formula SAE Electric with Online Junction Temperature Estimation of all SiC MOSFETs

Author(s):  
Fausto Stella ◽  
Gianmario Pellegrino ◽  
Eric Armando
Electronics ◽  
2020 ◽  
Vol 9 (4) ◽  
pp. 620 ◽  
Author(s):  
Bernardo Cougo ◽  
Lenin Morais ◽  
Gilles Segond ◽  
Raphael Riva ◽  
Hoan Tran Duc

This paper presents the influence of different pulse width modulation (PWM) methods on losses and thermal stresses in SiC power modules used in a three-phase inverter. The variation of PWM methods directly impacts instantaneous losses on these semiconductors, consequently resulting in junction temperature swing at the fundamental frequency of the converter’s output current. This thermal cycling can significantly reduce the lifetime of these components. In order to determine semiconductor losses, one needs to characterize SiC devices to calculate the instantaneous power. The characterization methodology of the devices, the calculation of instantaneous power and temperature of SiC dies, and the influence of the different PWM methods are presented. A 15-kVA inverter is built in order to obtain experimental results to confirm the characterization and loss calculation, and we show the best PWM methods to increase efficiency and reliability of the three-phase inverter for specific aircraft applications.


2011 ◽  
Vol 679-680 ◽  
pp. 738-741 ◽  
Author(s):  
Shinji Sato ◽  
Kohei Matsui ◽  
Yusuke Zushi ◽  
Yoshinori Murakami ◽  
Satoshi Tanimoto ◽  
...  

A forced-air-cooled three-phase inverter built with SiC-JFETs and -SBDs as power semi-conductor devices was designed and fabricated. The inverter can operate steadily at a rated power of 10 kW in a junction temperature range up to 200°C. Output power density of more than 20 kW/L was achieved. The design specifications, the power module fabrication process, the results of a high-temperature operating test and a continuous switching test are described in turn.


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