Junction temperature estimation model of insulated gate bipolar transistor power module in three-phase inverter

2017 ◽  
Author(s):  
Xin Xin ◽  
Chengning Zhang
Keyword(s):  
Bipolar Transistor ◽  
Junction Temperature ◽  
Estimation Model ◽  
Power Module ◽  
Temperature Estimation ◽  
Phase Inverter ◽  
Insulated Gate Bipolar Transistor ◽  
Three Phase ◽  
Three Phase Inverter

scholarly journals Forced-Air-Cooled 10 kW Three-Phase SiC Inverter with Output Power Density of More than 20 kW/L

2011 ◽  
Vol 679-680 ◽  
pp. 738-741 ◽  
Author(s):  
Shinji Sato ◽  
Kohei Matsui ◽  
Yusuke Zushi ◽  
Yoshinori Murakami ◽  
Satoshi Tanimoto ◽  
...  
Keyword(s):  
Power Density ◽  
Output Power ◽  
Junction Temperature ◽  
Power Module ◽  
Phase Inverter ◽  
Design Specifications ◽  
Three Phase ◽  
Temperature Operating ◽  
Forced Air ◽  
Three Phase Inverter

A forced-air-cooled three-phase inverter built with SiC-JFETs and -SBDs as power semi-conductor devices was designed and fabricated. The inverter can operate steadily at a rated power of 10 kW in a junction temperature range up to 200°C. Output power density of more than 20 kW/L was achieved. The design specifications, the power module fabrication process, the results of a high-temperature operating test and a continuous switching test are described in turn.

scholarly journals Influence of PWM Methods on Semiconductor Losses and Thermal Cycling of 15-kVA Three-Phase SiC Inverter for Aircraft Applications

Electronics ◽  
2020 ◽  
Vol 9 (4) ◽  
pp. 620 ◽  
Author(s):  
Bernardo Cougo ◽  
Lenin Morais ◽  
Gilles Segond ◽  
Raphael Riva ◽  
Hoan Tran Duc
Keyword(s):  
Thermal Cycling ◽  
Thermal Stresses ◽  
Pulse Width Modulation ◽  
Junction Temperature ◽  
Phase Inverter ◽  
Instantaneous Power ◽  
Power Modules ◽  
Temperature Swing ◽  
Three Phase ◽  
Three Phase Inverter

This paper presents the influence of different pulse width modulation (PWM) methods on losses and thermal stresses in SiC power modules used in a three-phase inverter. The variation of PWM methods directly impacts instantaneous losses on these semiconductors, consequently resulting in junction temperature swing at the fundamental frequency of the converter’s output current. This thermal cycling can significantly reduce the lifetime of these components. In order to determine semiconductor losses, one needs to characterize SiC devices to calculate the instantaneous power. The characterization methodology of the devices, the calculation of instantaneous power and temperature of SiC dies, and the influence of the different PWM methods are presented. A 15-kVA inverter is built in order to obtain experimental results to confirm the characterization and loss calculation, and we show the best PWM methods to increase efficiency and reliability of the three-phase inverter for specific aircraft applications.

The Study of Comparative Characterization between SiC MOSFET and Si- IGBT for Power Module and Three-Phase SPWM Inverter

2020 ◽  
Vol 1004 ◽  
pp. 1045-1053
Author(s):  
Heng Lee ◽  
Chun Kai Liu ◽  
Tao Chih Chang
Keyword(s):  
Ambient Temperature ◽  
Junction Temperature ◽  
System Level ◽  
Switching Frequency ◽  
Power Module ◽  
Ambient Temperatures ◽  
Three Phase ◽  
Type Power ◽  
Three Phase Inverter ◽  
Better Than

This paper focuses on how to define and integrate the system level and power module level with optimal conditions in SiC and Si-IGBT. To investigate the above situation, we compare the performance of SiC and Si-IGBT in power module and system level at different ambient temperatures. At the same maximum junction temperature 150°C and ambient temperature at 25°C and 80°C, it found that SiC type electrical resistance, maximum endurable current, and voltage could be better than the IGBT type power module above 20%. On the other hand, the simulation of three-phase inverter at different switching frequency such as 10kHz, 15kHz, 20kHz, 30kHz and it had been observed that the power loss of SiC inverter are 78% less for 10kHz switching frequency; 82% less for switching frequency at 15kHz; 85% less for 20kHz of switching frequency; 89% less for switching frequency at 30kHz in the Si-IGBT three-phase SPWM inverter at ambient temperature 80°C.

scholarly journals An Anti-Interference Online Monitoring Method for IGBT Bond Wire Aging

Electronics ◽  
2021 ◽  
Vol 10 (12) ◽  
pp. 1449
Author(s):  
Chuankun Wang ◽  
Yigang He ◽  
Yunfeng Jiang ◽  
Lie Li
Keyword(s):  
Online Monitoring ◽  
Junction Temperature ◽  
Collector Current ◽  
Monitoring Method ◽  
Insulated Gate Bipolar Transistor ◽  
Igbt Module ◽  
Three Phase ◽  
Bond Wires ◽  
Bond Wire ◽  
Three Phase Inverter

Due to the constant changes of the environment and load, the insulated-gate bipolar transistor (IGBT) module is subjected to a large amount of junction temperature (Tj) fluctuations, which often leads to damage to the bond wires. The monitoring parameters of IGBTs are often coupled with Tj, which increases the difficulty of monitoring IGBTs’ health status online. In this paper, based on the collector current (Ic) and collector-emitter on-state voltage (Vce_on) online monitoring circuit, an online monitoring method of IGBT bond wire aging against interference is proposed. First, the bond wire aging model is established, and the Vce_on is selected as the monitoring parameter. Secondly, taking a three-phase inverter circuit as an example, the Vce_on and Ic waveforms of the IGBT module are monitored in real time, and the process of online monitoring is introduced accordingly. Finally, the experimental results indicate that the method proposed in this paper can accurately identify the aging state of IGBT bond wires under different conditions.

scholarly journals Exploring the Electro-Thermal Parameters of Reliable Power Modules: Insulated Gate Bipolar Transistor Junction and Case Temperature

Energies ◽  
2018 ◽  
Vol 11 (9) ◽  
pp. 2371
Author(s):  
Bo-Ying Liu ◽  
Gao-Sheng Wang ◽  
Ming-Lang Tseng ◽  
Kuo-Jui Wu ◽  
Zhi-Gang Li
Keyword(s):  
Bipolar Transistor ◽  
Thermal Parameters ◽  
Junction Temperature ◽  
Stable Operation ◽  
Switching Loss ◽  
Thermal Impedance ◽  
Power Module ◽  
Reliable Operation ◽  
Insulated Gate Bipolar Transistor ◽  
Transient Thermal

In the exploration of new energy sources and the search for a path to sustainable development the reliable operation of wind turbines is of great importance to the stability of power systems. To ensure the stable and reliable operation of the Insulated Gate Bipolar Transistor (IGBT) power module, in this work the influence of changes with aging of different electro-thermal parameters on the junction temperature and the case temperature was studied. Firstly, power thermal cycling tests were performed on the IGBT power module, and the I-V characteristic curve, switching loss and transient thermal impedance are recorded every 1000 power cycles, and then the electrical parameters (saturation voltage drop and switching loss) and the thermal parameters (junction-to-case thermal resistance) of the IGBT are obtained under different aging states. The obtained electro-thermal parameters are substituted into the established electro-thermal coupling model to obtain the junction temperature and the case temperature under different aging states. The degrees of influence of these electro-thermal parameters on the junction temperature and case temperature under different aging states are analyzed by the single variable method. The results show that the changes of the electro-thermal parameters under different aging states affects the junction temperature and the case temperature as follows: (1) Compared with other parameters, the transient thermal impedance has the greatest influence on the junction temperature, which is 60.1%. (2) Compared with other parameters, the switching loss has the greatest influence on the case temperature, which is 79.8%. The result provides a novel method for the junction temperature calculation model and lays a foundation for evaluating the aging state by using the case temperature, which has important theoretical and practical significance for the stable operation of power electronic systems.

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