Analysis and design of low-frequency microstrip antennas

2004 ◽  
Author(s):  
R. Araneo ◽  
S. Celozzi
Keyword(s):  
Low Frequency ◽  
Microstrip Antennas ◽  
Analysis And Design

Analysis and design of low frequency and high power flextensional transducer with double-grooves

2019 ◽  
Vol 149 ◽  
pp. 25-31
Author(s):  
Rongjing Guo ◽  
Shiyang Li ◽  
Tangan Li ◽  
Xuan Sun ◽  
Luan Lin ◽  
...  
Keyword(s):  
High Power ◽  
Low Frequency ◽  
Analysis And Design ◽  
Flextensional Transducer

scholarly journals Series-Series/Series Compensated Inductive Power Transmission System with Symmetrical Half-Bridge Resonant Converter: Design, Analysis, and Experimental Assessment

Energies ◽  
2019 ◽  
Vol 12 (12) ◽  
pp. 2268 ◽  
Author(s):  
Jianfeng Hong ◽  
Mingjie Guan ◽  
Zaifa Lin ◽  
Qiu Fang ◽  
Wei Wu ◽  
...  
Keyword(s):  
Theoretical Analysis ◽  
Power Transmission ◽  
Low Frequency ◽  
Resonant Converter ◽  
Inductive Power Transfer ◽  
Leakage Inductance ◽  
Analysis And Design ◽  
Converter Design ◽  
Inductive Power Transmission ◽  
Inductive Power

In order to compensate the large leakage inductance and improve the power transmission capacity, capacitors are widely used in inductive power transfer (IPT) systems, which results in high voltage or current stresses in the resonant tanks and limits higher volt-ampere (VA) rating of the transfer power, especially in medium and low frequency applications. This paper presents a symmetrical half-bridge resonant converter (SHRC) for series-series/series compensated IPT systems with detailed analysis and design. It operates at a relatively low frequency of 12.5 kHz, suitable for IGBT applications. The theoretical analysis shows that, compared with full-bridge resonant converter (FRC) for IPT, the symmetrical half-bridge resonant converter achieves a higher efficiency. Simulation and a prototype of 1500 W power output were built to verify the theoretical analysis. The experimental results show that the power loss of SHRC is 39.7 W while that of FRC is 79.4 W, which is consistent with the theoretical analysis. The global efficiency of the IPT based on the proposed converter is 91.6%.

scholarly journals Analysis and Design of Damping Circuit Parameters for LCC Valves Based on Broadband Model

Energies ◽  
2020 ◽  
Vol 13 (5) ◽  
pp. 1059
Author(s):  
Yingjie Tang ◽  
Zheren Zhang ◽  
Zheng Xu
Keyword(s):  
Numerical Optimization ◽  
Low Frequency ◽  
Parameter Design ◽  
Circuit Parameter ◽  
Frequency Model ◽  
Analysis And Design ◽  
Electromagnetic Transient ◽  
High Voltage Direct Current ◽  
Novel Method

Damping circuits are installed inside the converter valve to limit commutation overshoots. They have significant effects on the valve’s turn-off performances, which should be carefully considered in parameter design. First, the calculation models for the turn-off process are discussed, including the conventional low frequency model and the broadband model. Then, it is found that high-frequency equipment parameters have significant effects on the transient valve voltage, which means that the conventional analytical methods based on low-frequency models is not suitable for damping circuit parameter design. The relationships between the turn-off performances and damping circuit parameters have also been analyzed in detail with the broadband model. To achieve better economic efficiency, this paper proposes a novel method for damping circuit parameter optimization, which combines the electromagnetic transient (EMT) calculation and the numerical optimization. Last, the case study is carried out based on a practical ±1100 kV ultra-high-voltage direct-current (UHVDC) transmission project, which proves the reliability and flexibility of the proposed method.

Modal Analysis and Design of a Vertically Movable Gate Field Effect Transistor (VMGFET) Proposed for Low-Frequency Sensing Applications

2012 ◽  
Vol 268-270 ◽  
pp. 1538-1543
Author(s):  
Justin Williams ◽  
William B.D. Forfang ◽  
Byoung Hee You ◽  
In Hyouk Song
Keyword(s):  
Modal Analysis ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Low Frequency ◽  
Free Vibrations ◽  
Element Analysis ◽  
Analysis And Design ◽  
Sensing Applications ◽  
Gate Structure ◽  
Effect Transistor

The objective of this study is to design and optimize a vertically movable gate field effect transistor (VMGFET) - suitable for low-frequency, high-sensitivity applications - with an emphasis on modal analysis of the suspended gate structure, optimization of mesh density within the employed finite element analysis software, and optimization of the moveable gate dimensions given its relationship with fabrication complexity and the structure’s resonant frequencies. The methods of design, optimization, and analysis were carried out with COMSOL Multiphysics 4.2a under the assumption of no damping with free vibrations. The results indicate optimal dimensions of the suspended gate structure - given constraints on size, resonance, and fabrication complexity - which suggest a beam thickness of 3 µm and a beam width of 15 µm, yielding an upper limit of input force frequencies near 2 kHz.

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