Impact of ion-implantation damage and transient-enhanced diffusion on advanced bipolar technologies-comparisons between experiments and non-equilibrium diffusion modeling

AbstractThe interaction between boron and excess silicon interstitials caused by ion implantation hinders the formation of ultra-shallow, low resistivity junctions. Previous studies have shown that fluorine reduces boron transient enhanced diffusion, however it is unclear whether this observed phenomenon is due to the fluorine interacting with the boron atoms or silicon self-interstitials. Amorphization of a n-type Czochralski wafer was achieved with a 70 keV Si+ implantation at a dose of 1×1015/cm2. The Si+ implant produced a 1500Å deep amorphous layer, which was then implanted with 1.12 keV 1×1015/cm2 B+. The samples were then implanted with a dose of 2×1015/cm2F+ at various energies ranging from 2 keV to 36 keV. Ellipsometry measurements showed no increase in the amorphous layer thickness from either the boron or fluorine implants. The experimental conditions allowed the chemical species effect to be studied independent of the implant damage caused by the fluorine implant. Post-implantation anneals were performed in a tube furnace at 750° C. Secondary ion mass spectrometry was used to monitor the dopant diffusion after annealing. Transmission electron microscopy (TEM) was used to study the end-of-range defect evolution. The addition of fluorine reduces the boron transient enhanced diffusion for all fluorine energies. It was observed that both the magnitude of the boron diffusivity and the concentration gradient of the boron profile vary as a function of fluorine energy.

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A Historical View of the Role of Ion-Implantation Defects in PN Junction Formation for Devices

MRS Proceedings ◽

10.1557/proc-610-b4.1 ◽

2000 ◽

Vol 610 ◽

Cited By ~ 1

Author(s):

R.B. Fair

Keyword(s):

Ion Implantation ◽

Group Iii ◽

Enhanced Diffusion ◽

Historical View ◽

Implantation Damage ◽

Long Time ◽

Ultra Shallow Junctions ◽

Induced Defects ◽

Cs Ions

AbstractThe early use of ion bombardment of semiconductors for forming doped regions was viewed as a room-temperature process by solid-state scientists. Many interesting, but relatively useless devices were made by implanting species such as Na and Cs ions to form pn junctions from radiation damage or interstitial impurities. The revolutionary idea that one could implant Group III and V dopants into semiconductors and then heat the implanted substrate to above 800C didn't appear until 10 years after Shockley's 1954 patent. At that time, implantation damage became relatively unimportant as processes evolved with high temperature, long time diffusions. With the advent of rapid thermal processing, the attention shifted back to implantation-induced defects to explain transient-enhanced-diffusion effects. Today's challenges in forming ultra-shallow junctions by ion-implantation are in controlling and minimizing the damage structures that dominate junction activation and diffusion. Low-energy implants have been effective in this regard.

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Transient enhanced diffusion from decaborane molecular ion implantation

Applied Physics Letters ◽

10.1063/1.122353 ◽

1998 ◽

Vol 73 (14) ◽

pp. 2015-2017 ◽

Cited By ~ 23

Author(s):

Aditya Agarwal ◽

H.-J. Gossmann ◽

D. C. Jacobson ◽

D. J. Eaglesham ◽

M. Sosnowski ◽

...

Keyword(s):

Ion Implantation ◽

Molecular Ion ◽

Enhanced Diffusion ◽

Transient Enhanced Diffusion

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Simulation of Dopant Redistribution During Gate Oxidation Including Transient-Enhanced Diffusion Caused by Implantation Damage

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.2565 ◽

2000 ◽

Vol 39 (Part 1, No. 5A) ◽

pp. 2565-2576 ◽

Cited By ~ 1

Author(s):

Tetsuya Uchida ◽

Katsumi Eikyu ◽

Eiji Tsukuda ◽

Masato Fujinaga ◽

Akinobu Teramoto ◽

...

Keyword(s):

Enhanced Diffusion ◽

Implantation Damage ◽

Transient Enhanced Diffusion ◽

Dopant Redistribution

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Reduction of boron transient enhanced diffusion in silicon by low-energy cluster ion implantation

Materials Chemistry and Physics ◽

10.1016/s0254-0584(98)00108-4 ◽

1998 ◽

Vol 54 (1-3) ◽

pp. 80-83 ◽

Cited By ~ 35

Author(s):

Norihiro Shimada ◽

Takaaki Aoki ◽

Jiro Matsuo ◽

Isao Yamada ◽

Kenichi Goto ◽

...

Keyword(s):

Ion Implantation ◽

Low Energy ◽

Enhanced Diffusion ◽

Transient Enhanced Diffusion ◽

Cluster Ion ◽

Energy Cluster

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Ion Implantation Damage and B Diffusion in Low Energy B Implantation with Ge Preimplantation

MRS Proceedings ◽

10.1557/proc-396-757 ◽

1995 ◽

Vol 396 ◽

Cited By ~ 2

Author(s):

M. Kase ◽

H. Mori

Keyword(s):

Ion Implantation ◽

Diffusion Length ◽

Solid Phase ◽

Low Energy ◽

Solid Phase Epitaxy ◽

Light Damage ◽

Sheet Resistivity ◽

Enhanced Diffusion ◽

Implantation Damage

AbstractFor low energy B (LEB) implantation into Si, the channeling tail is larger than for BF2+ implantation, so Ge+ preamorphization is expected to provide a shallower junction. We studied the Ge+ and B+ implantation damages and the damage-induced B diffusion. The substrate implanted Ge+ with 2×l014 cm-2, that is, a complete amorphization, retains less residual defects after RTA. However the sheet resistivity (S) is higher than the sample implanted with only LEB. Solid phase epitaxy (SPE) of amorphized layer causes B out-diffusion. The diffusion length of the amorphized substrate is smaller than that of LEB. We expect that the B diffusion is enhanced by the LEB damage, which corresponds to the enhanced diffusion of light damage.

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