A Historical View of the Role of Ion-Implantation Defects in PN Junction Formation for Devices

2000 ◽  
Vol 610 ◽  
Author(s):  
R.B. Fair
Keyword(s):  
Ion Implantation ◽  
Group Iii ◽  
Enhanced Diffusion ◽  
Historical View ◽  
Implantation Damage ◽  
Long Time ◽  
Ultra Shallow Junctions ◽  
Induced Defects ◽  
Cs Ions

AbstractThe early use of ion bombardment of semiconductors for forming doped regions was viewed as a room-temperature process by solid-state scientists. Many interesting, but relatively useless devices were made by implanting species such as Na and Cs ions to form pn junctions from radiation damage or interstitial impurities. The revolutionary idea that one could implant Group III and V dopants into semiconductors and then heat the implanted substrate to above 800C didn't appear until 10 years after Shockley's 1954 patent. At that time, implantation damage became relatively unimportant as processes evolved with high temperature, long time diffusions. With the advent of rapid thermal processing, the attention shifted back to implantation-induced defects to explain transient-enhanced-diffusion effects. Today's challenges in forming ultra-shallow junctions by ion-implantation are in controlling and minimizing the damage structures that dominate junction activation and diffusion. Low-energy implants have been effective in this regard.

Role of stresses in annealing of ion‐implantation damage in Si

1978 ◽  
Vol 33 (1) ◽  
pp. 21-23 ◽  
Author(s):  
K. Seshan ◽  
E. P. EerNisse
Keyword(s):  
Ion Implantation ◽  
Implantation Damage

Species and dose dependence of ion implantation damage induced transient enhanced diffusion

1996 ◽  
Vol 79 (5) ◽  
pp. 2352-2363 ◽  
Author(s):  
H. S. Chao ◽  
S. W. Crowder ◽  
P. B. Griffin ◽  
J. D. Plummer
Keyword(s):  
Ion Implantation ◽  
Dose Dependence ◽  
Enhanced Diffusion ◽  
Implantation Damage ◽  
Transient Enhanced Diffusion

Ion Implantation Damage and B Diffusion in Low Energy B Implantation with Ge Preimplantation

1995 ◽  
Vol 396 ◽  
Author(s):  
M. Kase ◽  
H. Mori
Keyword(s):  
Ion Implantation ◽  
Diffusion Length ◽  
Solid Phase ◽  
Low Energy ◽  
Solid Phase Epitaxy ◽  
Light Damage ◽  
Sheet Resistivity ◽  
Enhanced Diffusion ◽  
Implantation Damage

AbstractFor low energy B (LEB) implantation into Si, the channeling tail is larger than for BF2+ implantation, so Ge+ preamorphization is expected to provide a shallower junction. We studied the Ge+ and B+ implantation damages and the damage-induced B diffusion. The substrate implanted Ge+ with 2×l014 cm-2, that is, a complete amorphization, retains less residual defects after RTA. However the sheet resistivity (S) is higher than the sample implanted with only LEB. Solid phase epitaxy (SPE) of amorphized layer causes B out-diffusion. The diffusion length of the amorphized substrate is smaller than that of LEB. We expect that the B diffusion is enhanced by the LEB damage, which corresponds to the enhanced diffusion of light damage.

Erbium-defect interactions in silica films implanted with MeV Er ions

1991 ◽  
Vol 235 ◽  
Author(s):  
A. Polman ◽  
D. C. Jacobson ◽  
J. M. Poate
Keyword(s):  
Energy Transfer ◽  
Ion Implantation ◽  
Radiative Energy ◽  
Silica Films ◽  
Transfer Processes ◽  
Radiative Energy Transfer ◽  
Implantation Damage ◽  
Defect Interactions ◽  
Er Doped ◽  
Induced Defects

ABSTRACTThe effect of ion implantation damage on energy transfer processes in Er-doped silica films prepared by MeV ion implantation is studied, using measurements of the luminescence decay of Er3+(4ƒ11) at 1.535 μm. Silica films implanted with Er and annealed at 900°C show a luminescence lifetime of 14.1 ms. Subsequent irradiation with MeV C, Si, or Ge ions at fluences as low as 1011 ions/cm2 decreases the lifetime, which eventually saturates at 6.6–7.8 ms for fluences larger than 1014 ions/cm2. The fluence required to saturate and the lifetime at saturation depend on the ion used. These results are interpreted in terms of non-radiative energy transfer processes caused by irradiation-induced defects in the silica. The ion damage effects are mainly caused by the electronic component of the energy loss along the ion trajectories.

Transient Enhanced Diffusion for Ultra Low Energy Boron, Phosphorus, and Arsenic Implantation in Silicon

1998 ◽  
Vol 532 ◽  
Author(s):  
Ning Yu ◽  
Amitabh Jain ◽  
Doug Mercer
Keyword(s):  
Ion Implantation ◽  
Process Development ◽  
Cmos Technology ◽  
Low Energy ◽  
Defect Engineering ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Ultra Shallow Junctions ◽  
Technology Nodes ◽  
The Impact

ABSTRACTThe SIA roadmap predicts that junction depths of 500 angstroms are required for CMOS technology nodes of 0.18 μm or beyond by the year 2001. There are several ultra-shallow junction doping techniques currently under investigation. These include beamline ion implantation, plasma immersion ion implantation, and gas immersion laser doping. This study was based on beamline ion implantation of B, P, and As into single-crystal Si wafers at 0.25-2 keV to doses of (2- 10)×1014 at./cm2 with minimized beam energy contamination. Rapid thermal annealing was applied to the implanted wafers at 1000-1050 °C for 10-15 sec at ramp rates of 35- 50 °C/s in a N2 ambient. Transient enhanced diffusion was observed for all three implant species. For example, the depth of 0.25 keV B measured by SIMS increases from 250 to 520 A at a concentration level of l×1017 at./cm3 upon RTA. To minimize the TED, several schemes of defect engineering were applied prior to low energy implantation, including pre-amorphization and implantation of other species. A comparison of TED for different implantation conditions is given with the aim of process development for minimizing TED. The impact of energy contamination on ultra shallow junctions is also addressed.

Formation of stable dopant interstitials during ion implantation of silicon

1986 ◽  
Vol 1 (3) ◽  
pp. 476-492 ◽  
Author(s):  
S.J. Pennycook ◽  
R.J. Culbertson ◽  
J. Narayan
Keyword(s):  
Ion Implantation ◽  
Direct Evidence ◽  
Solid Phase ◽  
Diffusion Mechanism ◽  
Transient Effects ◽  
Group V ◽  
Group Iii ◽  
Enhanced Diffusion ◽  
High Concentrations ◽  
Dopant Atoms

High concentrations of self-interstitials are trapped by dopant atoms during ion implantation into Si. For group V dopants, these complexes are sufficiently stable to survive solid-phase-epitaxial (SPE) growth but break up on subsequent thermal processing and cause a transientenhanced diffusion. Dopant diffusion coefficients are enhanced by up to five orders of magnitude over tracer values and are characterized by an activation energy of approximately one half of the tracer values. In the case of group III dopants, any complexes formed during implantation do not survive SPE growth but a second source of self-interstitials becomes significant and leads to similar transient effects. This is the damaged layer underlying the original amorphous/crystalline interface. These observations provide direct evidence for longrange self-interstitial migration in Si, and we believe these are the first observations of the interstitialcy diffusion mechanism with no vacancy contribution. We propose that the complexes are simply interstitial dopant atoms (in a split <100> interstitialcy configuration) that are particularly stable in the case of group V dopants. As they decay self-interstitials are released and cause the transient-enhanced diffusion.

The Problem of Identifying and Modeling the Relationship between Monetary Factor and Inflation in the Russian Economy

2008 ◽  
pp. 61-76
Author(s):  
A. Porshakov ◽  
A. Ponomarenko
Keyword(s):  
Money Supply ◽  
Money Demand ◽  
Russian Economy ◽  
Long Run ◽  
Complex Approach ◽  
Wide Range ◽  
Long Time ◽  
The Relationship ◽  
Supply Side Factors

The role of monetary factor in generating inflationary processes in Russia has stimulated various debates in social and scientific circles for a relatively long time. The authors show that identification of the specificity of relationship between money and inflation requires a complex approach based on statistical modeling and involving a wide range of indicators relevant for the price changes in the economy. As a result a model of inflation for Russia implying the decomposition of inflation dynamics into demand-side and supply-side factors is suggested. The main conclusion drawn is that during the recent years the volume of inflationary pressures in the Russian economy has been determined by the deviation of money supply from money demand, rather than by money supply alone. At the same time, monetary factor has a long-run spread over time impact on inflation.

Role of Mechanical Stresses at Ion Implantation of CdHgTe Solid Solutions

2013 ◽  
Vol 58 (9) ◽  
pp. 872-880 ◽  
Author(s):  
Smirnov A.B. Smirnov A.B. ◽  
◽  
Lytvyn O.S. Lytvyn O.S. ◽  
Morozhenko V.A. Morozhenko V.A. ◽  
Savkina R.K. Savkina R.K. ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Solid Solutions ◽  
Mechanical Stresses

ПОЕТИЧНА МОВОТВОРЧІСТЬ ЯК ВІДОБРАЖЕННЯ КОНЦЕПТУАЛЬНОЇ КАРТИНИ СВІТУ

2018 ◽  
pp. 166-174
Author(s):  
М. В. Дзисюк
Keyword(s):  
Semantic Space ◽  
Spiritual Values ◽  
Spatial Features ◽  
Filling Ability ◽  
Material Reality ◽  
Space Saving ◽  
Long Time ◽  
Literary Techniques ◽  
Linguistic Process

Definitions of concept and sphere of the concept are widely used in different aspects of modern linguistics. There is no single understanding of these notions and universal methodology of research has not been invented by linguists yet. This predetermines topicality of the article. The aim of our research is analysis, generalization, and systematization of different approaches to the interpretation of the notion ‘concept’ that exist in modern linguistics. It results in the following tasks: analysis of existing definitions of concept and its division into certain ranges and defining classification features. Modern linguists raise the questions of the conceptual and linguistic image of the world, the role of a human factor in its formation and interaction as in a linguistic process more frequently and it is defined as a fact in today’s linguistic scientific literature. The problem of individual language formation, poetic one in particular gains important meaning in this context. Ukrainian linguists use the notion of ‘concept’ for a long time now although they adhere to different views on its definition. Researches of the question define two major approaches in the analysis of the notion ‘concept’ that is linguistic-cognitive and linguistic-cultural. We can claim that words-concepts are agents between material reality and the ideal world that is synthesized in poetry, carriers of sense since with their help the versatility of the real world correlates with eternal spiritual values. Therefore, main features of the notion ‘concept’ in which objectively-cognitive and subjectively-creative features are combines are as follow sensual authenticity, time-spatial features, mediation between material and spiritual, semantic filling, ability to polysemy. A word with a generally symbolic meaning that is implemented in a language process through literary techniques typical for poet’s idiotype is the main core of the concept. The concept in poetic language formation by modern Uman poets is semantically integral, fulfilled, able to penetrate into other concepts and absorb semantically narrower images saving unity and semantic independence, varying numerous interpretations that project it in a certain semantic space, saving potential of real reflection.

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