Dependence of Active Layer Thickness of Polymer Thin Film Transistors on Electrical Characteristics of Inverter Circuit

2009 ◽  
Author(s):  
L. Resendiz ◽  
V. Cabrera ◽  
M. Castillo ◽  
R. Ramirez
Keyword(s):  
Thin Film ◽  
Layer Thickness ◽  
Active Layer ◽  
Thin Film Transistors ◽  
Active Layer Thickness ◽  
Electrical Characteristics ◽  
Polymer Thin Film ◽  
Inverter Circuit

Effect of active layer thickness on the electrical characteristics of polymer thin film transistors

2010 ◽  
Vol 11 (12) ◽  
pp. 1920-1927 ◽  
Author(s):  
L. Reséndiz ◽  
M. Estrada ◽  
A. Cerdeira ◽  
B. Iñiguez ◽  
M.J. Deen
Keyword(s):  
Thin Film ◽  
Layer Thickness ◽  
Active Layer ◽  
Thin Film Transistors ◽  
Active Layer Thickness ◽  
Electrical Characteristics ◽  
Polymer Thin Film

scholarly journals Effects of Active Layer Thickness on the Electrical Characteristics and Stability of High-Mobility Amorphous Indium–Gallium–Tin Oxide Thin-Film Transistors

Electronics ◽  
2021 ◽  
Vol 10 (11) ◽  
pp. 1295
Author(s):  
Dae-Hwan Kim ◽  
Hyun-Seok Cha ◽  
Hwan-Seok Jeong ◽  
Seong-Hyun Hwang ◽  
Hyuck-In Kwon
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Layer Thickness ◽  
Active Layer ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Active Layer Thickness ◽  
Electrical Characteristics ◽  
Indium Gallium

Herein, we investigated the effects of active layer thickness (tS) on the electrical characteristics and stability of high-mobility indium–gallium–tin oxide (IGTO) thin-film transistors (TFTs). IGTO TFTs, with tS values of 7 nm, 15 nm, 25 nm, 35 nm, and 50 nm, were prepared for this analysis. The drain current was only slightly modulated by the gate-to-source voltage, in the case of the IGTO TFT with tS = 50 nm. Under positive bias stress (PBS), the electrical stability of the IGTO TFTs with a tS less than 35 nm improved as the tS increased. However, the negative bias illumination stress (NBIS) stability of these IGTO TFTs deteriorated as the tS increased. To explain these phenomena, we compared the O1s spectra of IGTO thin films with different tS values, acquired using X-ray photoelectron spectroscopy. The characterization results revealed that the better PBS stability, and the low NBIS stability, of the IGTO TFTs with thicker active layers were mainly due to a decrease in the number of hydroxyl groups and an increase in the number of oxygen vacancies in the IGTO thin films with an increase in tS, respectively. Among the IGTO TFTs with different tS, the IGTO TFT with a 15-nm thick active layer exhibited the best electrical characteristics with a field-effect mobility (µFE) of 26.5 cm2/V·s, a subthreshold swing (SS) of 0.16 V/dec, and a threshold voltage (VTH) of 0.3 V. Moreover, the device exhibited robust stability under PBS (ΔVTH = 0.9 V) and NBIS (ΔVTH = −1.87 V).

Active-layer Thickness Effects Related to the Threshold Voltage and Mobility Degradation in Poly-crystalline ZnO Thin-Film Transistors

2011 ◽  
Vol 58 (5(1)) ◽  
pp. 1307-1311 ◽  
Author(s):  
Kwang-Seok Jeong ◽  
Yu-Mi Kim ◽  
Jeong-Gyu Park ◽  
Seung-Dong Yang ◽  
Ho-Jin Yun ◽  
...  
Keyword(s):  
Thin Film ◽  
Layer Thickness ◽  
Active Layer ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Active Layer Thickness ◽  
Zno Thin Film ◽  
Mobility Degradation

The impact of active layer thickness on low-frequency noise characteristics in InZnO thin-film transistors with high mobility

2012 ◽  
Vol 100 (17) ◽  
pp. 173501 ◽  
Author(s):  
Hyun-Sik Choi ◽  
Sanghun Jeon ◽  
Hojung Kim ◽  
Jaikwang Shin ◽  
Changjung Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Layer Thickness ◽  
Active Layer ◽  
Thin Film Transistors ◽  
Low Frequency ◽  
High Mobility ◽  
Active Layer Thickness ◽  
Frequency Noise ◽  
Noise Characteristics ◽  
The Impact
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