Macroscopic theory and numerical modelling of carrier transport and leakage effects in semiconductor laser heterostructures

Author(s):  
N.A. Zakhleniuk ◽  
M.J. Adams
2020 ◽  
Vol 54 (8) ◽  
pp. 882-889
Author(s):  
P. S. Gavrina ◽  
O. S. Soboleva ◽  
A. A. Podoskin ◽  
A. E. Kazakova ◽  
V. A. Kapitonov ◽  
...  

2006 ◽  
Vol 40 (1) ◽  
pp. 84-88 ◽  
Author(s):  
A. V. Savel’ev ◽  
M. V. Maksimov ◽  
V. M. Ustinov ◽  
R. P. Seĭsyan

1994 ◽  
Vol 30 (1) ◽  
pp. 49-53 ◽  
Author(s):  
R.F. Kazarinov ◽  
M.R. Pinto

1999 ◽  
Vol 579 ◽  
Author(s):  
Mark S. Hybertsen ◽  
M. A. Alam ◽  
G. A. Baraff ◽  
R. K. Smith

ABSTRACTThe cascade of microscopic processes relevant to semiconductor laser operation is outlined. An integrated laser simulator which encapsulates these processes is applied to illustrate the connection between an accurate model of the optical gain in the quantum wells and measured characteristics of representative 1.3 μm InGaAsP/InP lasers. These results highlight the impact of carrier transport effects on the observed optical gain and the modulation response of semiconductor lasers.


2021 ◽  
Vol 51 (2) ◽  
pp. 124-128
Author(s):  
Yu K Bobretsova ◽  
D A Veselov ◽  
A A Podoskin ◽  
N V Voronkova ◽  
S O Slipchenko ◽  
...  

1996 ◽  
Vol 8 (6) ◽  
pp. 818-820 ◽  
Author(s):  
M.A. Parker ◽  
J.S. Kimmet ◽  
R.J. Michalak ◽  
H.S. Wang ◽  
D.B. Shire ◽  
...  

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