Critical Microscopic Processes in Semiconductor Lasers

1999 ◽  
Vol 579 ◽  
Author(s):  
Mark S. Hybertsen ◽  
M. A. Alam ◽  
G. A. Baraff ◽  
R. K. Smith
Keyword(s):  
Quantum Wells ◽  
Semiconductor Laser ◽  
Semiconductor Lasers ◽  
Carrier Transport ◽  
Optical Gain ◽  
Laser Operation ◽  
Modulation Response ◽  
Accurate Model ◽  
Transport Effects ◽  
The Impact

ABSTRACTThe cascade of microscopic processes relevant to semiconductor laser operation is outlined. An integrated laser simulator which encapsulates these processes is applied to illustrate the connection between an accurate model of the optical gain in the quantum wells and measured characteristics of representative 1.3 μm InGaAsP/InP lasers. These results highlight the impact of carrier transport effects on the observed optical gain and the modulation response of semiconductor lasers.

Optical modal gain in multiple quantum-well semiconductor lasers based on InP

2006 ◽  
Vol 84 (1) ◽  
pp. 53-66 ◽  
Author(s):  
M S Wartak ◽  
P Weetman ◽  
T Alajoki ◽  
J Aikio ◽  
V Heikkinen ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Semiconductor Lasers ◽  
Carrier Transport ◽  
Multiple Quantum Well ◽  
Optical Gain ◽  
Rate Equations ◽  
Multiple Quantum ◽  
Electrostatic Effects ◽  
Modal Gain

An approach to determine the optical modal gain spectra in multiple quantum-well semiconductor lasers based on InP in terms of the current at electrodes is presented. The link between the current at the electrodes and the density of carriers inside each quantum well was provided by rate equations with the inclusion of carrier transport effects. Description of hole dispersion is based on a 4 × 4 Luttinger–Kohn Hamiltonian and was done with the electrostatic effects of the carrier charges. Electrostatic effects were included via a self-consistent solution of electron and hole wave equations and the Poisson equation. The optical gain for the TE (transverse electric) mode has been determined with the inclusion of non-Markovian effects, Coulombic enhancement, and band-gap renormalization. The theoretical approach was compared with experimental measurements of the optical gain on a laser structure consisting of four quantum wells using the Hakki–Paoli method. The important role played by the leakage current was revealed when the results were compared. PACS No.: 73.63.Hs, 78.20.Bh, 78.20.Ci

Long wavelength high-speed semiconductor lasers with carrier transport effects

1992 ◽  
Vol 28 (10) ◽  
pp. 2230-2241 ◽  
Author(s):  
M. Ishikawa ◽  
R. Nagarajan ◽  
T. Fukushima ◽  
J.G. Wasserbauer ◽  
J.E. Bowers
Keyword(s):  
Semiconductor Lasers ◽  
High Speed ◽  
Carrier Transport ◽  
Long Wavelength ◽  
Transport Effects

Learning Semiconductor Laser Characteristics Using Virtual Analogue Simulation

1998 ◽  
Vol 35 (1) ◽  
pp. 71-78 ◽  
Author(s):  
W. N. Cheung
Keyword(s):  
Semiconductor Laser ◽  
Semiconductor Lasers ◽  
Laser Diodes ◽  
Rate Equations ◽  
Nonlinear Behaviour ◽  
Simple Method ◽  
Modulation Response ◽  
Analogue Simulation ◽  
Current Characteristics ◽  
Semiconductor Laser Diodes

This article describes a simple method for simulating typical characteristics of semiconductor lasers based on the rate equations of the device. The method being implemented in PSpice may be used to demonstrate the light-current characteristics, charge number clamping, modulation response, transient and nonlinear behaviour of semiconductor laser diodes.

Band structure and optical gain in InGaAsN∕GaAs and InGaAsN∕GaAsN quantum wells

2003 ◽  
Vol 150 (1) ◽  
pp. 25 ◽  
Author(s):  
X. Marie ◽  
J. Barrau ◽  
T. Amand ◽  
H. Carrère ◽  
A. Arnoult ◽  
...  
Keyword(s):  
Band Structure ◽  
Quantum Wells ◽  
Optical Gain

scholarly journals The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Mikolaj Grabowski ◽  
Ewa Grzanka ◽  
Szymon Grzanka ◽  
Artur Lachowski ◽  
Julita Smalc-Koziorowska ◽  
...  
Keyword(s):  
Quantum Wells ◽  
High Temperatures ◽  
Point Defects ◽  
X Ray Diffraction ◽  
Helium Ions ◽  
X Ray ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
The Impact ◽  
Ingan Quantum Wells

AbstractThe aim of this paper is to give an experimental evidence that point defects (most probably gallium vacancies) induce decomposition of InGaN quantum wells (QWs) at high temperatures. In the experiment performed, we implanted GaN:Si/sapphire substrates with helium ions in order to introduce a high density of point defects. Then, we grew InGaN QWs on such substrates at temperature of 730 °C, what caused elimination of most (but not all) of the implantation-induced point defects expanding the crystal lattice. The InGaN QWs were almost identical to those grown on unimplanted GaN substrates. In the next step of the experiment, we annealed samples grown on unimplanted and implanted GaN at temperatures of 900 °C, 920 °C and 940 °C for half an hour. The samples were examined using Photoluminescence, X-ray Diffraction and Transmission Electron Microscopy. We found out that the decomposition of InGaN QWs started at lower temperatures for the samples grown on the implanted GaN substrates what provides a strong experimental support that point defects play important role in InGaN decomposition at high temperatures.

Impact of donor compensation ratio on photorefractive two–wave mixing dynamics in multiple quantum wells structures

2014 ◽  
Vol 23 (03) ◽  
pp. 1450029 ◽  
Author(s):  
Błażej Jabłoński
Keyword(s):  
Quantum Wells ◽  
Concentration Ratio ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Wave Mixing ◽  
Compensation Ratio ◽  
Mixing Dynamics ◽  
Two Wave Mixing ◽  
Charge Field ◽  
The Impact

The kind of defects and their concentration have a significant impact on photorefractive phenomena taking place within the structure of semi-insulating GaAs / AlGaAs multiple quantum wells. In this paper, the impact of donor-to-acceptor concentration ratio on the grating in photorefractive two-waves mixing was examined. The formation of the space charge field for different defect concentrations as well as different external electric field intensities are analyzed.

Feasibility Of Novel Si-Based Interminiband Lasers

1998 ◽  
Vol 533 ◽  
Author(s):  
Gregory Sun ◽  
Lionel Friedman ◽  
Richard A. Soref
Keyword(s):  
Quantum Wells ◽  
Current Density ◽  
Population Inversion ◽  
Heavy Hole ◽  
Optical Gain ◽  
Laser Structure ◽  
Strained Si ◽  
Superlattice Structures ◽  
A Current

AbstractWe have designed a parallel interminiband lasing in superlattice structures of coherently strained Si0.5Ge0.5/Si quantum wells (QWs). Population inversion is achieved between the non-parabolic heavy-hole valence minibands locally in-k-space. Lasing transition is at 5.4μm. Our analysis indicates that an optical gain of 134/cm can be obtained when the laser structure is pumped with a current density of 5kA/cm2.

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