Temperature dependence of the thermo-optical properties in fragile Tellurite glasses

AbstractDual implantations of Si+ and P+ into InP:Fe were performed both at 200°C and room temperature. Si+ ions were implanted by 150keV with doses ranging from 5×1013 /cm2 to 1×1015 /cm2, while P+ ions were implanted by 110keV. 160keV and 180keV with doses ranging from 1×l013 /cm2 to 1×1015 /cm2. Hall measurements and photoluminescence spectra were used to characterize the silicon nitride encapsulated annealed samples. It was found that enhanced activation can be obtained by Si+ and P+ dual implantations. The optimal condition for dual implantations is that the atomic distribution of implanted P overlaps that of implanted si with the same implant dose. For a dose of 5×l014 /cm2, the highest activation for dual implants is 70% while the activation for single implant is 40% after annealing at 750°C for 15 minutes. PL spectrum measurement was carried out at temperatures from 11K to 100K. A broad band at about 1.26eV was found in Si+ implanted samples, of which the intensity increased with increasing of the Si dose and decreased with increasing of the co-implant P+ dose. The temperature dependence of the broad band showed that it is a complex (Vp-Sip) related band. All these results indicate that silicon is an amphoteric species in InP.

Download Full-text

Temperature Dependence of the Fading Speed of Blue-Green Produced by Cu Ion Implantation into LiNbO3

MRS Proceedings ◽

10.1557/proc-316-439 ◽

1993 ◽

Vol 316 ◽

Cited By ~ 1

Author(s):

Yukinori Saito ◽

Shinji Suganomata ◽

P. Moretti

Keyword(s):

Optical Properties ◽

Ion Implantation ◽

Temperature Dependence ◽

Visible Region ◽

Host Crystal

The optical properties of colorless and transparent crystals can be changed by introducing impurities into the crystal and depend on the elements added. What kind of elements should be added depends on how one modifies the properties. If one wants to put beautiful color on some colorless and transparent crystals such as Al203, SiO2, LiNbO3, etc., it is necessary to produce definite absorption peaks in the visible region for the crystals. In case of using ion implantation for introducing impurities, there is essentially no limitation to the combination of host crystal and impurities.

Download Full-text

Temperature dependence of optical properties of Ga[sub 0.3]In[sub 0.7]N[sub x]As[sub 1−x] quantum dots grown on GaAs (001)

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1705576 ◽

2004 ◽

Vol 22 (3) ◽

pp. 1515 ◽

Cited By ~ 10

Author(s):

A. Nishikawa ◽

Y. G. Hong ◽

C. W. Tu

Keyword(s):

Quantum Dots ◽

Optical Properties ◽

Temperature Dependence

Download Full-text

Judd–Ofelt analysis and improvement of thermal and optical properties of tellurite glasses by adding P2O5

Journal of Luminescence ◽

10.1016/j.jlumin.2010.07.026 ◽

2010 ◽

Vol 130 (12) ◽

pp. 2394-2401 ◽

Cited By ~ 89

Author(s):

I. Jlassi ◽

H. Elhouichet ◽

M. Ferid ◽

C. Barthou

Keyword(s):

Optical Properties ◽

Tellurite Glasses

Download Full-text

Temperature dependence of the optical properties in p-Cd0.96Zn0.04Te single crystals

Journal of Materials Research ◽

10.1557/jmr.2001.0301 ◽

2001 ◽

Vol 16 (8) ◽

pp. 2196-2199 ◽

Cited By ~ 4

Author(s):

H. Y. Lee ◽

T. W. Kang ◽

T. W. Kim

Keyword(s):

Optical Properties ◽

Temperature Dependence ◽

Single Crystals ◽

Reasonable Agreement ◽

Theoretical Calculations ◽

Optoelectronic Devices ◽

Activation Energies ◽

Acoustic Parameters ◽

Longitudinal Acoustic ◽

Pl Spectra

Photoluminescence (PL) measurements were performed on p-Cd0.96Zn0.04Te single crystals to investigate the dependence of the excitons on temperature. The activation energies and the longitudinal acoustic parameters of the excitons were determined from the temperature dependence of the PL spectra and were in reasonable agreement with the theoretical calculations. These results can help improve understanding for the application of p-CdxZn1–xTe single crystals in optoelectronic devices.

Download Full-text