Nano - Microscale Electrical Characterization of Copper Thru Silicon Vias in 3D Stacked Integrated Circuits

Author(s):  
Djamel Allal ◽  
Alexandra Delvallee ◽  
Jose Moran ◽  
Mohammad Saif Khan ◽  
Francoi S Piquemal
2012 ◽  
Vol 22 (5) ◽  
pp. 055021 ◽  
Author(s):  
Pradeep Dixit ◽  
Tapani Vehmas ◽  
Sami Vähänen ◽  
Philippe Monnoyer ◽  
Kimmo Henttinen

2011 ◽  
Vol 1349 ◽  
Author(s):  
Thomas Hantschel ◽  
Xiaoxing Ke ◽  
Nicolo’ Chiodarelli ◽  
Andreas Schulze ◽  
Hugo Bender ◽  
...  

ABSTRACTThe use of carbon nanotubes (CNT) as interconnects in future integrated circuits (IC) is being considered as a replacement for copper. As this research needs also innovative metrology solutions, we have developed a combined approach for the plane-view analysis of CNT integrated in contact holes where transmission electron microscopy (TEM) enables the quantitative measurement of density and structure of the CNT and where scanning spreading resistance microscopy (SSRM) is used to electrically map the distribution of the CNT. This paper explains the used methodologies in detail and presents results from 300 nm diameter contact holes filled with CNT of 8-12 nm in diameter and a density of about 2 x 1011 cm-2.


2020 ◽  
Author(s):  
Lyle Jones

The electrical Testing and Characterization of the devices built under research conditions on silicon wafers, diced wafers, or package parts have hampered research since the beginning of integrated circuits. The challenges of performing electrical characterization on devices are to acquire useful and accurate data, the ease of use of the test platform, the portability of the test equipment, the ability to automate quickly, to allow modifications to the platform, the ability to change the configuration of the Device Under Test (DUT) or the Memristor Based Design (MBD), and to do this within budget. The devices that this research is focused on are memristors with unique test challenges. Some of the tests performed on memristors are Voltage sweeps, pulsing of Voltages, and threshold Voltages. Standard methods of testing memristors usually require hands-on experience, multiple bulky work stations, and hours of training. This work reports a novel, low-cost, portable test and characterization platform for many types of memristors with a voltage range from -10V to +10V, which is portable, low-cost, built with off-the-shelf components, and with configurability through software and hardware. To demonstrate the performance of the platform, the platform was able to take a virgin memristor from “forming” to operation voltages, and then incrementally change resistances by Voltage Pulsing. The platform within this work allows the researcher flexibility in electrical characterization by being able to accept many memristor types and MBDs, and applying environmental conditions to the MBD, with this flexibility of the platform the productivity of the researcher will increase.


Measurement ◽  
2009 ◽  
Vol 42 (2) ◽  
pp. 281-289 ◽  
Author(s):  
Alessandro Cabrini ◽  
Laura Gobbi ◽  
Davide Baderna ◽  
Guido Torelli

2010 ◽  
Vol 41 (1) ◽  
pp. 9-16 ◽  
Author(s):  
Ioannis Savidis ◽  
Syed M. Alam ◽  
Ankur Jain ◽  
Scott Pozder ◽  
Robert E. Jones ◽  
...  

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