Embedded Test Instrument for On-Chip Phase Noise Evaluation of Analog/IF Signals

2015 ◽  
Author(s):  
F. Azais ◽  
S. David-Grignot ◽  
L. Latorre ◽  
F. Lefevre
Keyword(s):  
Phase Noise ◽  
Embedded Test ◽  
Test Instrument ◽  
Noise Evaluation ◽  
On Chip

Digital Embedded Test Instrument for On-Chip Phase Noise Testing of Analog/RF Integrated Circuits

2015 ◽  
Vol 25 (03) ◽  
pp. 1640014
Author(s):  
Florence Azaïs ◽  
Stéphane David-Grignot ◽  
Laurent Latorre ◽  
François Lefevre
Keyword(s):  
Integrated Circuits ◽  
Phase Noise ◽  
Digital Signature ◽  
Signal Acquisition ◽  
Rf Integrated Circuits ◽  
Embedded Test ◽  
Silicon Area ◽  
Test Instrument ◽  
On Chip ◽  
Minimal Hardware

This paper presents a digital embedded test instrument (ETI) for on-chip phase noise (PN) testing of analog/RF integrated circuits. The technique relies on 1–bit signal acquisition and dedicated processing to compute a digital signature related to the PN level. An appropriate algorithm based on on-the-fly processing of the 1-bit signal is defined in order to implement the BIST module with minimal hardware resources. Its implementation in CMOS 140[Formula: see text]nm technology occupies only 7,885[Formula: see text][Formula: see text]m2, which represents an extremely small silicon area. Hardware measurements are performed on an FPGA prototype that validates the proposed instrument.

Online Phase-Noise Estimation in FMCW Radar Transceivers Using an Artificial On-Chip Target

2016 ◽  
Vol 64 (12) ◽  
pp. 4789-4800 ◽  
Author(s):  
Alexander Melzer ◽  
Alexander Onic ◽  
Mario Huemer
Keyword(s):  
Phase Noise ◽  
Noise Estimation ◽  
Fmcw Radar ◽  
On Chip

scholarly journals Fundamental optical linewidth of soliton microcombs

2021 ◽  
Author(s):  
Fuchuan Lei ◽  
Zhichao Ye ◽  
Attila Fülöp ◽  
Victor Torres-Company
Keyword(s):  
Frequency Shift ◽  
Phase Noise ◽  
Phase Coherence ◽  
Pump Laser ◽  
Frequency Noise ◽  
Coherent Light ◽  
Optical Phase ◽  
New Strategy ◽  
Precision Metrology ◽  
On Chip

Abstract Soliton microcombs provide a versatile platform for realizing fundamental studies and technological applications. To be utilized as frequency rulers for precision metrology, soliton microcombs must display broadband phase coherence, a parameter characterized by the optical phase or frequency noise of the comb lines and their corresponding optical linewidths. Here, we analyze the optical phase-noise dynamics in soliton microcombs and show that, because of the Raman self-frequency shift, the fundamental linewidth of some of the comb lines can, surprisingly, be narrower than the linewidth of the pump laser. This work elucidates information about the ultimate limits in phase coherence of soliton microcombs and illustrates a new strategy for the generation of spectrally coherent light on chip.

scholarly journals A 1.8 V 18.13 MHz Inverter-Based On-Chip RC Oscillator with Flicker Noise Suppression Using Logic Transition Voltage Feedback

Electronics ◽  
2019 ◽  
Vol 8 (11) ◽  
pp. 1353
Author(s):  
Junsoo Ko ◽  
Minjae Lee
Keyword(s):  
Phase Noise ◽  
Noise Suppression ◽  
Flicker Noise ◽  
Low Frequency ◽  
Cmos Process ◽  
Delay Compensation ◽  
Circuit Delay ◽  
On Chip ◽  
Voltage Feedback ◽  
Transition Voltage

An inverter-based on-chip resistor capacitor (RC) oscillator with logic transition voltage (LTV) tracking feedback for circuit delay compensation is presented. In order to achieve good frequency stability, the proposed technique considers the entire inverter chain as a comparator block and changes the LTV to control the oscillation frequency. Furthermore, the negative feedback structure also reduces low-frequency offset phase noise. With a 1.8 V supply and at room temperature, the suggested oscillator operates at 18.13 MHz, consuming 245.7 μ W. Compared to the free-running case, the proposed technique reduces phase noise by 7.7 dB and 5.45 dB at 100 Hz and 1 kHz, respectively. The measured phase noise values are −60.09 dBc/Hz at 1 kHz with a figure of merit (FOM) of 151.35 dB/Hz, and −106.27 dBc/Hz at 100 KHz with an FOM of 157.53 dBc/Hz. The proposed oscillator occupies 0.056 mm2 in a standard 0.18 μ m CMOS process.

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