A temperature compensated MOSFET-C band-pass filter in 0.35 um CMOS technology

2020 ◽  
Author(s):  
Brkic Miodrag ◽  
Jelena Radic ◽  
Kristina Nikolic ◽  
Mirjana Damnjanovic
Keyword(s):  
Cmos Technology ◽  
Band Pass Filter ◽  
Pass Filter ◽  
Band Pass

scholarly journals Implementation of RC Oscillator with High-Q Frequency Selection using CCCII.

2019 ◽  
Vol 8 (12) ◽  
pp. 4470-4477
Keyword(s):  
Second Generation ◽  
Current Mode ◽  
Cmos Technology ◽  
Current Conveyor ◽  
Band Pass Filter ◽  
Phase Oscillators ◽  
Pass Filter ◽  
High Q ◽  
Voltage Mode ◽  
Band Pass

This article given a second generation current controlled current conveyor positive (CCCII+), second generation current controlled current conveyor negative (CCCII-), Quadrature oscillator with high-Q frequency choosing network and implementing completely different phase oscillators by employing (CCCII+) positive and (CCCII-) negative, and high band pass filter network, the approach is predicted on the CMOS technology . The root of this concept is, considering a customary voltage mode oscillator which consists of band pass filter with prime quality issue (high-Q) and voltage mode amplifier is transfigure into current mode oscillator by replacing tans-conductance amplifier. Because the loop of the oscillator is has lavish selectivity, the oscillator process less distortion. In addition 3dB bandwidth, oscillating condition, oscillation frequency of the oscillator could linearly, independently and electronically be tuned by adjusting the bias current of the (CCCII±)[1], lastly different simulations have been carried out to verify the linearity between output and input ports, range of frequency operations. These results can justify that the designed circuits are workable.

scholarly journals CMOS CDBA-Based Inverse Filter Structure

2020 ◽  
Vol 9 (3) ◽  
pp. 2226-2231
Keyword(s):  
Cmos Technology ◽  
Experimental Results ◽  
Band Pass Filter ◽  
Inverse Filter ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Filter Structure ◽  
Low Pass ◽  
Band Pass ◽  
High Pass

This paper presents a voltage-mode(VM) tunable multifunction inverse filter configuration employing current differencing buffered amplifiers (CDBA). The presented structure utilizes two CDBAs, two/three capacitors and four/five resistors to realize inverse low pass filter (ILPF), inverse high pass filter (IHPF), inverse band pass filter (IBPF), and inverse band reject filter(IBRF) from the same circuit topology by suitable selection(s) of the branch admittances(s). PSPICE simulations have been performed with 0.18µm TSMC CMOS technology to validate the theory. Some sample experimental results have also been provided using off-the-shelf IC AD844 based CDBA.

scholarly journals A Low-Voltage Multi-Band ZigBee Transceiver

Electronics ◽  
2019 ◽  
Vol 8 (12) ◽  
pp. 1474
Author(s):  
Zhiqun Li ◽  
Yan Yao ◽  
Zengqi Wang ◽  
Guoxiao Cheng ◽  
Lei Luo
Keyword(s):  
Frequency Synthesizer ◽  
Low Voltage ◽  
Supply Voltage ◽  
Maximum Output Power ◽  
Cmos Technology ◽  
Maximum Output ◽  
Band Pass Filter ◽  
Pass Filter ◽  
Front End ◽  
Band Pass

This paper presents a low-voltage ZigBee transceiver covering a unique frequency band of 780/868/915/2400 MHz in 180 nm CMOS technology. The design consists of a receiver with a wideband variable-gain front end and a complex band-pass filter (CBPF) based on poles construction, a transmitter employing the two-point direct-modulation structure, a Ʃ-Δ fractional-N frequency synthesizer with two VCOs and some auxiliary circuits. The measured results show that under 1 V supply voltage, the receiver reaches −93.8 dBm and −102 dBm sensitivity for 2.4 GHz and sub-GHz band, respectively, and dissipates only 1.42 mW power. The frequency synthesizer achieves −106.8 dBc/Hz and −116.7 dBc/Hz phase noise at 1 MHz frequency offset along with 4.2 mW and 3.5 mW power consumption for 2.4 GHz and sub-GHz band, respectively. The transmitter features 2.67 dBm and 12.65 dBm maximum output power at the expense of 21.2 mW and 69.5 mW power for 2.4 GHz and sub-GHz band, respectively.

scholarly journals Single CDTA-Based Current Mode All-Pass Filter and Its Applications

2011 ◽  
Vol 2011 ◽  
pp. 1-5 ◽  
Author(s):  
Neeta Pandey ◽  
Sajal K. Paul
Keyword(s):  
Input Impedance ◽  
Current Mode ◽  
Cmos Technology ◽  
Band Pass Filter ◽  
Output Impedance ◽  
Spice Simulation ◽  
Pass Filter ◽  
Transconductance Amplifier ◽  
Band Pass ◽  
Current Difference

This paper presents a single current difference transconductance amplifier (CDTA) based all-pass current mode filter. The proposed configuration makes use of a grounded capacitor which makes it suitable for IC implementation. Its input impedance is low and output impedance is high, hence suitable for cascading. The circuit does not use any matching constraint. The nonideality analysis of the circuit is also given. Two applications, namely, a quadrature oscillator and a highQband pass filter are developed with the proposed circuit. The functionality of the circuit is verified with SPICE simulation using 0.35 μm TSMC CMOS technology parameters.

Memristor Based Planar Tunable RF Circuits

2019 ◽  
Vol 28 (13) ◽  
pp. 1950225
Author(s):  
C. L. Palson ◽  
D. D. Krishna ◽  
B. R. Jose ◽  
J. Mathew ◽  
M. Ottavi
Keyword(s):  
Frequency Tuning ◽  
Rf Circuits ◽  
Cmos Technology ◽  
Spiral Inductor ◽  
Band Pass Filter ◽  
Matching Network ◽  
Pass Filter ◽  
Band Pass ◽  
Communication System Design ◽  
Metal Layers

Memristors have been recently proposed as an alternative to incorporate switching along with traditional CMOS circuits. Adaptive impedance and frequency tuning are an essential and challenging aspect in communication system design. To enable both, a matching network based on switchable capacitors with fixed inductors is proposed in this paper where the switching is done by memristive switches. This paper analyzes the operation of memristors as a switch and a matching network based on memristors which adaptively tunes with impedance and frequency. With three capacitor banks of each 0.5 pF resolution and two fixed inductors, matching for antenna impedance ranging from 20 to 200[Formula: see text]Ohms and for frequencies ranging from 0.9 to 3.2[Formula: see text]GHz is reported. Thereafter, an adaptive planar band-pass filter is implemented on CMOS technology with two metal layers. This adaptive frequency tunable band-pass filter uses a [Formula: see text] network with resonator tanks in both arms that operates at 2.45 GHz. It is tunable from 2.8[Formula: see text]GHz to 7.625[Formula: see text]GHz range. This tunability is achieved using tunable spiral inductor based on memristive switches. The proposed filter layout is implemented and simulated in ANSYS Designer. The initialization and the programming circuitry to enable adaptive switching of the memristive devices has to be addressed. Since RF memristive devices are not commercially available, circuit level simulations are done as a proof of concept to validate the expected results.

A Low-IF 2.4 GHz Integrated RF Receiver for Bluetooth Applications

2013 ◽  
Vol 329 ◽  
pp. 416-420
Author(s):  
Lai Jiang ◽  
Shao Hua Liu ◽  
Hang Yu ◽  
Yan Li
Keyword(s):  
Signal Strength ◽  
Cmos Technology ◽  
Received Signal Strength ◽  
Band Pass Filter ◽  
Received Signal Strength Indicator ◽  
Pass Filter ◽  
Rf Receiver ◽  
Band Pass ◽  
Simulation Results

In this paper, a low-IF 2.4 GHz integrated RF receiver for Bluetooth is presented. Designed in a 0.18 μm CMOS technology, the receiver consists of LNA, mixer, complex band-pass filter, and GFSK demodulator. A received signal strength indicator is also employed in the receiver to auto adjust the receiver gain. In this paper, the structures of the major modules were analyzed, and the simulation results are presented and discussed.

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