A Low-IF 2.4 GHz Integrated RF Receiver for Bluetooth Applications

2013 ◽  
Vol 329 ◽  
pp. 416-420
Author(s):  
Lai Jiang ◽  
Shao Hua Liu ◽  
Hang Yu ◽  
Yan Li
Keyword(s):  
Signal Strength ◽  
Cmos Technology ◽  
Received Signal Strength ◽  
Band Pass Filter ◽  
Received Signal Strength Indicator ◽  
Pass Filter ◽  
Rf Receiver ◽  
Band Pass ◽  
Simulation Results

In this paper, a low-IF 2.4 GHz integrated RF receiver for Bluetooth is presented. Designed in a 0.18 μm CMOS technology, the receiver consists of LNA, mixer, complex band-pass filter, and GFSK demodulator. A received signal strength indicator is also employed in the receiver to auto adjust the receiver gain. In this paper, the structures of the major modules were analyzed, and the simulation results are presented and discussed.

Analisa Elemen Multiarms Resonator Open Loop Pada Band-Pass Filter Mikrostrip Yang Bekerja Di Frekuensi EHF

2021 ◽  
Vol 8 (2) ◽  
pp. 93-104
Author(s):  
M. Reza Hidayat ◽  
Difa Dwi Juliantara Sukmawan
Keyword(s):  
Bandpass Filter ◽  
Open Loop ◽  
Band Pass Filter ◽  
Pass Filter ◽  
A Value ◽  
Resonator Design ◽  
Band Pass ◽  
Patch Width ◽  
Simulation Results ◽  
Patch Length

The use of bandpass filters is commonly used but the use of specifications varies depending on needs, in this case the microstrip bandpass filter is expected to observe the multiarms characteristics of the open loop resonator on the performance of the bandpass filter for EHF frequencies. The design of this microstrip bandpass filter uses a multiarms open loop resonator design where at the beginning of the simulation stage uses only 1 arm with patch width, arm spacing, feeder line width and patch length based on trial and error. The final simulation results are obtained with a connector distance of 2 mm and a distance of 1 mm between arms with a value of S11 = -13.8 dB and S21 = -2.8 dB at a frequency of 30.8 GHz based on the simulation results. The filter has been successfully fabricated but cannot be measured because the frequency is too high and the measuring instrument cannot measure the frequency

A SAW Filter of Elliptic Structure IDT

2014 ◽  
Vol 665 ◽  
pp. 623-628
Author(s):  
Dai Qiang Wang ◽  
Liang Rong Li ◽  
Yu Qing Chen ◽  
Zu Ming Yao ◽  
Hong Gong ◽  
...  
Keyword(s):  
Thin Films ◽  
Center Frequency ◽  
Band Pass Filter ◽  
Function Model ◽  
Modeling Tools ◽  
Pass Filter ◽  
Band Pass ◽  
Simulation Results ◽  
Weighting Methods ◽  
Piezoelectric Substrate

The design uses silicon-AlN thin films as the piezoelectric substrate, Use apo- dization weighting methods to optimize the design of IDT. The improved δ function model was Modeling Tools of Apodization weighted ellipse IDT structure, According to the result of simulation, we designed a layout of SAW band-pass filter and fabricated a sample of it which center frequency is 300MHz and insertion loss is 7dB, The research shows the consistency of simulation results with the experimental results.

scholarly journals High-Performance RF Balanced Microstrip Mixer Configuration for Cryogenic and Room Temperatures

Electronics ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 102
Author(s):  
Noy Citron ◽  
Eldad Holdengreber ◽  
Oz Sorkin ◽  
Shmuel E. Schacham ◽  
Eliyahu Farber
Keyword(s):  
High Performance ◽  
Schottky Diodes ◽  
Band Pass Filter ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Noise Rejection ◽  
Low Pass ◽  
Hybrid Coupler ◽  
Band Pass ◽  
Simulation Results

A high-performance S-band down-conversion microstrip mixer, for operation from 77 K to 300 K, is described. The balanced mixer combines a 90 degree hybrid coupler, two Schottky diodes, a band pass filter, and a low pass filter. The coupler phase shift drastically improves noise rejection. The circuit was implemented according to the configuration obtained from extensive simulation results based on electromagnetic analysis. The experimental results agreed well with the simulation results, showing a maximum measured insertion loss of 0.4 dB at 2 GHz. The microstrip mixer can be easily adjusted to different frequency ranges, up to about 50 GHz, through the proper choice of microstrip configuration. This novel S-band cryogenic mixer, implemented without resorting to special components, shows a very high performance at liquid nitrogen temperatures, making this mixer very suitable for high-temperature superconductive applications, such as front-ends.

scholarly journals Implementation of RC Oscillator with High-Q Frequency Selection using CCCII.

2019 ◽  
Vol 8 (12) ◽  
pp. 4470-4477
Keyword(s):  
Second Generation ◽  
Current Mode ◽  
Cmos Technology ◽  
Current Conveyor ◽  
Band Pass Filter ◽  
Phase Oscillators ◽  
Pass Filter ◽  
High Q ◽  
Voltage Mode ◽  
Band Pass

This article given a second generation current controlled current conveyor positive (CCCII+), second generation current controlled current conveyor negative (CCCII-), Quadrature oscillator with high-Q frequency choosing network and implementing completely different phase oscillators by employing (CCCII+) positive and (CCCII-) negative, and high band pass filter network, the approach is predicted on the CMOS technology . The root of this concept is, considering a customary voltage mode oscillator which consists of band pass filter with prime quality issue (high-Q) and voltage mode amplifier is transfigure into current mode oscillator by replacing tans-conductance amplifier. Because the loop of the oscillator is has lavish selectivity, the oscillator process less distortion. In addition 3dB bandwidth, oscillating condition, oscillation frequency of the oscillator could linearly, independently and electronically be tuned by adjusting the bias current of the (CCCII±)[1], lastly different simulations have been carried out to verify the linearity between output and input ports, range of frequency operations. These results can justify that the designed circuits are workable.

scholarly journals CMOS CDBA-Based Inverse Filter Structure

2020 ◽  
Vol 9 (3) ◽  
pp. 2226-2231
Keyword(s):  
Cmos Technology ◽  
Experimental Results ◽  
Band Pass Filter ◽  
Inverse Filter ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Filter Structure ◽  
Low Pass ◽  
Band Pass ◽  
High Pass

This paper presents a voltage-mode(VM) tunable multifunction inverse filter configuration employing current differencing buffered amplifiers (CDBA). The presented structure utilizes two CDBAs, two/three capacitors and four/five resistors to realize inverse low pass filter (ILPF), inverse high pass filter (IHPF), inverse band pass filter (IBPF), and inverse band reject filter(IBRF) from the same circuit topology by suitable selection(s) of the branch admittances(s). PSPICE simulations have been performed with 0.18µm TSMC CMOS technology to validate the theory. Some sample experimental results have also been provided using off-the-shelf IC AD844 based CDBA.

scholarly journals A Low-Voltage Multi-Band ZigBee Transceiver

Electronics ◽  
2019 ◽  
Vol 8 (12) ◽  
pp. 1474
Author(s):  
Zhiqun Li ◽  
Yan Yao ◽  
Zengqi Wang ◽  
Guoxiao Cheng ◽  
Lei Luo
Keyword(s):  
Frequency Synthesizer ◽  
Low Voltage ◽  
Supply Voltage ◽  
Maximum Output Power ◽  
Cmos Technology ◽  
Maximum Output ◽  
Band Pass Filter ◽  
Pass Filter ◽  
Front End ◽  
Band Pass

This paper presents a low-voltage ZigBee transceiver covering a unique frequency band of 780/868/915/2400 MHz in 180 nm CMOS technology. The design consists of a receiver with a wideband variable-gain front end and a complex band-pass filter (CBPF) based on poles construction, a transmitter employing the two-point direct-modulation structure, a Ʃ-Δ fractional-N frequency synthesizer with two VCOs and some auxiliary circuits. The measured results show that under 1 V supply voltage, the receiver reaches −93.8 dBm and −102 dBm sensitivity for 2.4 GHz and sub-GHz band, respectively, and dissipates only 1.42 mW power. The frequency synthesizer achieves −106.8 dBc/Hz and −116.7 dBc/Hz phase noise at 1 MHz frequency offset along with 4.2 mW and 3.5 mW power consumption for 2.4 GHz and sub-GHz band, respectively. The transmitter features 2.67 dBm and 12.65 dBm maximum output power at the expense of 21.2 mW and 69.5 mW power for 2.4 GHz and sub-GHz band, respectively.

scholarly journals Single CDTA-Based Current Mode All-Pass Filter and Its Applications

2011 ◽  
Vol 2011 ◽  
pp. 1-5 ◽  
Author(s):  
Neeta Pandey ◽  
Sajal K. Paul
Keyword(s):  
Input Impedance ◽  
Current Mode ◽  
Cmos Technology ◽  
Band Pass Filter ◽  
Output Impedance ◽  
Spice Simulation ◽  
Pass Filter ◽  
Transconductance Amplifier ◽  
Band Pass ◽  
Current Difference

This paper presents a single current difference transconductance amplifier (CDTA) based all-pass current mode filter. The proposed configuration makes use of a grounded capacitor which makes it suitable for IC implementation. Its input impedance is low and output impedance is high, hence suitable for cascading. The circuit does not use any matching constraint. The nonideality analysis of the circuit is also given. Two applications, namely, a quadrature oscillator and a highQband pass filter are developed with the proposed circuit. The functionality of the circuit is verified with SPICE simulation using 0.35 μm TSMC CMOS technology parameters.

scholarly journals Current Controlled Current Differencing Buffered Amplifier: Implementation and Applications

2004 ◽  
Vol 27 (4) ◽  
pp. 219-227 ◽  
Author(s):  
Sudhanshu Maheshwari ◽  
Iqbal A. Khan
Keyword(s):  
Active Element ◽  
Current Mode ◽  
Band Pass Filter ◽  
Pass Filter ◽  
Current Range ◽  
Current Input ◽  
Band Pass ◽  
Simulation Results ◽  
Definition Of ◽  
Harmonic Distortions

A new four terminal current-controlled active element is introduced, where parasitic resistances at two current input ports are controlled leading to the definition of current-controlled current differencing buffered amplifier. Bipolar implementation and as application current-mode band-pass filter circuits are proposed. Simulation results using real device parameters are included, which show device bandwidth of 35 MHz, low total harmonic distortions, and tuning over a wide current range.

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