Titanium-doped indium oxide films prepared by RF magnetron sputtering

2008 ◽  
Author(s):  
D. W. Han ◽  
J. Darma ◽  
E. Kuantama ◽  
D. J. Kwak ◽  
Y. M. Sung
Keyword(s):  
Magnetron Sputtering ◽  
Indium Oxide ◽  
Oxide Films ◽  
Rf Magnetron Sputtering ◽  
Indium Oxide Films

Study on Fluorine-Doped Indium Oxide Films Deposited by RF Magnetron Sputtering

2000 ◽  
Vol 39 (Part 1, No. 11) ◽  
pp. 6422-6426 ◽  
Author(s):  
Yuzo Shigesato ◽  
Naoko Shin ◽  
Masayuki Kamei ◽  
P. K. Song ◽  
Itatu Yasui
Keyword(s):  
Magnetron Sputtering ◽  
Indium Oxide ◽  
Oxide Films ◽  
Rf Magnetron Sputtering ◽  
Indium Oxide Films

Hafnium Oxide and Hydrogen Co-Doped Indium Oxide Films Deposited by Magnetron Sputtering Technology

2021 ◽  
Vol 1160 ◽  
pp. 51-55
Author(s):  
Cheng Ying Shi ◽  
Guang Hong Wang
Keyword(s):  
Magnetron Sputtering ◽  
Indium Oxide ◽  
Hafnium Oxide ◽  
Oxide Films ◽  
Optical And Electrical Properties ◽  
Radio Frequency Magnetron Sputtering ◽  
Donor Dopant ◽  
Indium Oxide Film ◽  
Co Doped ◽  
Indium Oxide Films

Hafnium and Hydrogen co-doped indium oxide films (IHFO:H) were prepared by radio frequency magnetron sputtering technology. The effect of hydrogen-donor dopant on the structural, optical and electrical properties of the films was investigated systematically. The resistivity of the IHFO:H film decreased by 2.4×10-4 Ω cm and the mobility improved by 8.2 cm2/Vs compared with Hafnium oxide doped indium oxide film. Employing the IHFO:H film as an electrode for a solar cell can improve efficiency.

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