Study on the growth mechanism of tin-doped indium oxide films deposited by direct current pulse magnetron sputtering

2013 ◽  
Vol 542 ◽  
pp. 415-419 ◽  
Author(s):  
Hualin Wang ◽  
Honglin Liu ◽  
Wanyu Ding ◽  
Weiping Chai
Keyword(s):  
Magnetron Sputtering ◽  
Current Pulse ◽  
Indium Oxide ◽  
Growth Mechanism ◽  
Direct Current ◽  
Oxide Films ◽  
Pulse Magnetron ◽  
Indium Oxide Films

Hafnium Oxide and Hydrogen Co-Doped Indium Oxide Films Deposited by Magnetron Sputtering Technology

2021 ◽  
Vol 1160 ◽  
pp. 51-55
Author(s):  
Cheng Ying Shi ◽  
Guang Hong Wang
Keyword(s):  
Magnetron Sputtering ◽  
Indium Oxide ◽  
Hafnium Oxide ◽  
Oxide Films ◽  
Optical And Electrical Properties ◽  
Radio Frequency Magnetron Sputtering ◽  
Donor Dopant ◽  
Indium Oxide Film ◽  
Co Doped ◽  
Indium Oxide Films

Hafnium and Hydrogen co-doped indium oxide films (IHFO:H) were prepared by radio frequency magnetron sputtering technology. The effect of hydrogen-donor dopant on the structural, optical and electrical properties of the films was investigated systematically. The resistivity of the IHFO:H film decreased by 2.4×10-4 Ω cm and the mobility improved by 8.2 cm2/Vs compared with Hafnium oxide doped indium oxide film. Employing the IHFO:H film as an electrode for a solar cell can improve efficiency.

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