On MX2-based metal-oxide-semiconductor device capacitance-voltage characteristics and dual-gate operation

2021 ◽  
Author(s):  
D. Lin ◽  
X. Wu ◽  
V. Mootheri ◽  
D. Cott ◽  
B. Groven ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Device ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Operation ◽  
Capacitance Voltage ◽  
Dual Gate

Thin germanium-carbon alloy layers grown directly on silicon for metal-oxide-semiconductor device applications

2006 ◽  
Vol 88 (15) ◽  
pp. 152101 ◽  
Author(s):  
D. Q. Kelly ◽  
I. Wiedmann ◽  
J. P. Donnelly ◽  
S. V. Joshi ◽  
S. Dey ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Device ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Device Applications

Charge noise analysis of metal oxide semiconductor dual-gate Si/SiGe quantum point contacts

2014 ◽  
Vol 115 (20) ◽  
pp. 203709 ◽  
Author(s):  
J. Kamioka ◽  
T. Kodera ◽  
K. Takeda ◽  
T. Obata ◽  
S. Tarucha ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Noise Analysis ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Quantum Point Contacts ◽  
Point Contacts ◽  
Dual Gate ◽  
Quantum Point ◽  
Charge Noise

Metal–oxide–semiconductor capacitance–voltage characteristics and band offsets for Si1−yCy/Si heterostructures

1998 ◽  
Vol 72 (18) ◽  
pp. 2286-2288 ◽  
Author(s):  
K. Rim ◽  
T. O. Mitchell ◽  
D. V. Singh ◽  
J. L. Hoyt ◽  
J. F. Gibbons ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Band Offsets ◽  
Capacitance Voltage
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