Ultra-Low Specific On-resistance Lateral Double-Diffused Metal-Oxide-Semiconductor Transistor with Enhanced Dual-Gate and Partial P-buried Layer

Oxide Semiconductor ◽

Dual Gate ◽

Buried Layer

Numerical Simulation of Static and Dynamic Characteristics of Dual-Gate Metal Oxide Semiconductor Thyristor

10.1143/jjap.34.l285 ◽

1995 ◽

Vol 34 (Part 2, No. 3A) ◽

pp. L285-L287

Author(s):

Noriyuki Iwamuro ◽

Yasukazu Seki

Keyword(s):

Numerical Simulation ◽

Metal Oxide ◽

Dynamic Characteristics ◽

Oxide Semiconductor ◽

Static And Dynamic Characteristics ◽

Charge noise analysis of metal oxide semiconductor dual-gate Si/SiGe quantum point contacts

Journal of Applied Physics ◽

10.1063/1.4878979 ◽

2014 ◽

Vol 115 (20) ◽

pp. 203709 ◽

Cited By ~ 1

Author(s):

J. Kamioka ◽

T. Kodera ◽

K. Takeda ◽

T. Obata ◽

S. Tarucha ◽

...

Keyword(s):

Metal Oxide ◽

Noise Analysis ◽

Oxide Semiconductor ◽

Quantum Point Contacts ◽

Point Contacts ◽

Dual Gate ◽

Quantum Point ◽

Charge Noise

Novel Si/SiC Heterojunction Lateral Double-diffused Metal Oxide Semiconductor Field Effect Transistor with P-type Buried Layer Breaking Silicon Limit

Chinese Physics B ◽

10.1088/1674-1056/abcf45 ◽

2020 ◽

Author(s):

Baoxing Duan ◽

Xin Huang ◽

Haitao Song ◽

Yandong Wang ◽

Yintang Yang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Buried Layer ◽

P Type

Coulomb blockade in the inversion layer of a Si metal‐oxide‐semiconductor field‐effect transistor with a dual‐gate structure

Applied Physics Letters ◽

10.1063/1.111085 ◽

1994 ◽

Vol 64 (5) ◽

pp. 586-588 ◽

Cited By ~ 31

Author(s):

Hideyuki Matsuoka ◽

Tsuneo Ichiguchi ◽

Toshiyuki Yoshimura ◽

Eiji Takeda

Keyword(s):

Metal Oxide ◽

Coulomb Blockade ◽

Field Effect ◽

Field Effect Transistor ◽

Inversion Layer ◽

Oxide Semiconductor ◽

Gate Structure ◽

Dual Gate ◽

Effect Transistor

Fabrication and electrical characteristics of dual-gate ZnO nanorod metal–oxide semiconductor field-effect transistors

Nanotechnology ◽

10.1088/0957-4484/17/11/s16 ◽

2006 ◽

Vol 17 (11) ◽

pp. S327-S331 ◽

Cited By ~ 51

Author(s):

Hyeong-Jin Kim ◽

Chul-Ho Lee ◽

Dong-Wook Kim ◽

Gyu-Chul Yi

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Oxide Semiconductor ◽

Zno Nanorod ◽

Electrical Characteristics ◽

Dual-gate lateral double-diffused metal—oxide semiconductor with ultra-low specific on-resistance

Chinese Physics B ◽

10.1088/1674-1056/22/4/048501 ◽

2013 ◽

Vol 22 (4) ◽

pp. 048501 ◽

Cited By ~ 6

Author(s):

Jie Fan ◽

Zhi-Gang Wang ◽

Bo Zhang ◽

Xiao-Rong Luo

Keyword(s):

Metal Oxide ◽

Oxide Semiconductor ◽

Effect of Wet Etched Thickness and Reoxidation on Reliability of Dual Gate Oxide for Sub-Quarter Micron Complementary Metal-Oxide-Semiconductor Devices

10.1143/jjap.39.2167 ◽

2000 ◽

Vol 39 (Part 1, No. 4B) ◽

pp. 2167-2171 ◽

Cited By ~ 1

Author(s):

Ihl Hyun Cho ◽

Nag Kyunn Sung ◽

Jong Hyuk Oh ◽

Min Soo Park ◽

Dong Kyun Sohn ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Gate Oxide ◽

Oxide Semiconductor ◽

Layout Dependent Induced Leakage and its Prevention with Different Shallow Trench Isolation Schemes in 0.18 µm Dual Gate Complementary Metal Oxide Semiconductor Technology

10.1143/jjap.46.375 ◽

2007 ◽

Vol 46 (1) ◽

pp. 375-377

Author(s):

Seong Yeol Mun ◽

Kyeong Cheol Shin ◽

Sang Bum Huh ◽

Je Il Ju ◽

Jae Yeong Kim ◽

...

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Shallow Trench Isolation ◽

Trench Isolation ◽

Subquarter-micrometer Dual Gate Complementary Metal Oxide Semiconductor Field Effect Transistor with Ultrathin Gate Oxide of 2 nm

10.1143/jjap.37.5926 ◽

1998 ◽

Vol 37 (Part 1, No. 11) ◽

pp. 5926-5931

Author(s):

Masahiro Shimizu ◽

Takashi Kuroi ◽

Masahide Inuishi ◽

Hideaki Arima ◽

Haruhiko Abe ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Complementary Metal Oxide Semiconductor ◽

Gate Oxide ◽

Oxide Semiconductor ◽

Dual Gate ◽

Effect Transistor

Fabrication of Metal-Oxide-Semiconductor Field-Effect-Transistor-Structured Silicon Field Emitters with a Polysilicon Dual Gate

10.1143/jjap.36.7736 ◽

1997 ◽

Vol 36 (Part 1, No. 12B) ◽

pp. 7736-7740 ◽

Cited By ~ 14

Author(s):

Seigo Kanemaru ◽

Ken Ozawa ◽

Keigo Ehara ◽

Takayuki Hirano ◽

Hisao Tanoue ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Oxide Semiconductor ◽

Field Emitters ◽

Dual Gate ◽

Effect Transistor