Power MOSFET simulation-a model to predict the behavior of a single cell as well as a hybrid power module

2003 ◽  
Author(s):  
J. Thoma ◽  
F. Pavuza
Keyword(s):  
Single Cell ◽  
Power Module ◽  
Power Mosfet ◽  
Hybrid Power

First Demonstration of High Temperature SiC CMOS Gate Driver in Bridge Leg for Hybrid Power Module Application

2018 ◽  
Vol 924 ◽  
pp. 854-857
Author(s):  
Ming Hung Weng ◽  
Muhammad I. Idris ◽  
S. Wright ◽  
David T. Clark ◽  
R.A.R. Young ◽  
...  
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Initial Increase ◽  
Reliability Test ◽  
Power Devices ◽  
Power Module ◽  
Hybrid Power ◽  
Gate Driver ◽  
Passive Circuit

A high-temperature silicon carbide power module using CMOS gate drive technology and discrete power devices is presented. The power module was aged at 200V and 300 °C for 3,000 hours in a long-term reliability test. After the initial increase, the variation in the rise time of the module is 27% (49.63ns@1,000h compared to 63.1ns@3,000h), whilst the fall time increases by 54.3% (62.92ns@1,000h compared to 97.1ns@3,000h). The unique assembly enables the integrated circuits of CMOS logic with passive circuit elements capable of operation at temperatures of 300°C and beyond.

scholarly journals Switching Performance of a 3.3-kV SiC Hybrid Power Module for Railcar Converters

IEEE Access ◽  
2020 ◽  
Vol 8 ◽  
pp. 182600-182609
Author(s):  
Xiang Li ◽  
Daohui Li ◽  
Guiqin Chang ◽  
Matthew Packwood ◽  
Daniel Pottage ◽  
...  
Keyword(s):  
Power Module ◽  
Switching Performance ◽  
Hybrid Power

scholarly journals Thermal and Electrical Characterization of Power Mosfet Module Using Coupled Field Analysis

2019 ◽  
Vol 35 (5) ◽  
pp. 641-655 ◽  
Author(s):  
H.-C. Cheng ◽  
C.-H. Wu ◽  
S.-Y. Lin
Keyword(s):  
Circuit Simulation ◽  
Field Analysis ◽  
Electrical Performance ◽  
Switching Frequency ◽  
Power Losses ◽  
Ambient Conditions ◽  
Power Module ◽  
Power Mosfet ◽  
Operation Conditions ◽  
Coupled Field

ABSTRACTTemperature resulting from the joule heating power and the turn-on and turn-off dissipation of high-power, high-frequency applications is the root cause of their thermal instability, electrical performance degradation, and even thermal-fatigue failure. Thus, the study presents thermal and electrical characterizations of the power MOSFET module packaged in SOT-227 under natural convection and forced convection through three-dimensional (3D) thermal-electric (TE) coupled field analysis. In addition, the influences of some key parameters like electric loads, ambient conditions, thermal management considerations (heat sink, heat spreader) and operation conditions (duty cycle and switching frequency) on the power loss and thermal performance of the power module are addressed. The study starts from a suitable estimation of the power losses, where the conduction losses are calculated using the temperature- and gate-voltage-dependent on-state resistance and drain current through the device, and the switching losses are predicted based on the ideal switching waveforms of the power MOSFETs applied. The effectiveness of the theoretical predictions in terms of device’s power losses and temperatures is demonstrated through comparison with the results of circuit simulation and thermal experiment.

Novel 3.3kV Si-SiC Hybrid Power Module

2018 ◽  
Author(s):  
Daohui Li ◽  
Fang Qi ◽  
Xiang Li ◽  
Matthew Packwood ◽  
Haihui Luo ◽  
...  
Keyword(s):  
Power Module ◽  
Hybrid Power

scholarly journals High-Frequency Non-Invasive Magnetic Field-Based Condition Monitoring of SiC Power MOSFET Modules

Energies ◽  
2021 ◽  
Vol 14 (20) ◽  
pp. 6720
Author(s):  
Javad Naghibi ◽  
Kamyar Mehran ◽  
Martin P. Foster
Keyword(s):  
Magnetic Field ◽  
Condition Monitoring ◽  
Switching Frequency ◽  
Power Module ◽  
Power Mosfet ◽  
Wire Bond ◽  
Wide Range ◽  
The Wire ◽  
Lift Off ◽  
Set Up

Current distribution anomaly can be used to indicate the onset of package-related failures modes in Silicon Carbide power MOSFET modules. In this paper, we propose to obtain the wire bond’s magnetic field profile using an array of Tunnel Magneto-Resistance (TMR) sensors, and characterise the small changes in the current density distribution to find the onset of the wire bond degradation processes, including wire bond lift-off, wire bond cracking, and wire bond fracture. We propose a novel condition monitoring technique where a non-galvanic high-bandwidth sensing and a reliability model monitor the health of the power switches. We designed a dedicated calibration set-up to examine the sensor array and calibrated to demonstrate the adequate sensitivity to a minimum 5% current anomaly detection in a single wire bond of the switching devices operating with 50 kHz switching frequency. We use a hardware-in-the-loop (HIL) experimental set-up to replicate wire bond-related failures in a 1200V/55A SiC MOSFET power module of a DC/DC Boost converter. Signal conditioning circuits are further designed to amplify and buffer the sensor readings. Experimental results showed the proposed technique is able to detect a wide range of package-related failures.

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