Design and Optimization of A High Power Density Low Voltage DC-DC Converter for Electric Vehicles

2020 ◽  
Author(s):  
Yang Chen ◽  
Wenbo Liu ◽  
Andrew Yurek ◽  
Xiang Zhou ◽  
Bo Sheng ◽  
...  
Keyword(s):  
Power Density ◽  
Electric Vehicles ◽  
High Power ◽  
Low Voltage ◽  
High Power Density ◽  
Design And Optimization

scholarly journals Interleaved, Switched Inductor and High-Gain Wide Bandgap Based Boost Converter Proposal

Energies ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 800
Author(s):  
David Marroqui ◽  
Ausias Garrigós ◽  
Cristian Torres ◽  
Carlos Orts ◽  
Jose M. Blanes ◽  
...  
Keyword(s):  
Power Density ◽  
High Power ◽  
Low Voltage ◽  
High Gain ◽  
Wide Bandgap ◽  
High Power Density ◽  
Boost Converters ◽  
Proposal A ◽  
Current Ripples ◽  
Current Ripple

Many applications (electric vehicles, renewable energies, low-voltage DC grids) require simple, high-power density and low-current ripple-boost converters. Traditional step-up converters are limited when large transformation ratios are involved. In this work is proposed a step-up converter that brings together the characteristics of high gain, low ripple, and high-power density. From the converter proposal, a mathematical analysis of its operation is first performed, including its static transfer function, stress of components, and voltage and current ripples. Furthermore, it provides a design example for an application of Vin = 48 V to Vo = 270 V and 500 W. For its implementation, two different wide bandgap (WBG) semiconductor models have been used, hybrid GaN cascodes and SiC MOSFETs. Finally, the experimental results of the produced prototypes are shown, and the results are discussed.

High Temperature Silicon-on-Insulator Gate Driver for SiC-FET Power Modules

2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000152-000158
Author(s):  
J. Valle Mayorga ◽  
C. Gutshall ◽  
K. Phan ◽  
I. Escorcia ◽  
H. A. Mantooth ◽  
...  
Keyword(s):  
Power Density ◽  
High Power ◽  
High Efficiency ◽  
Low Voltage ◽  
Silicon On Insulator ◽  
Switching Frequency ◽  
Cmos Process ◽  
High Power Density ◽  
Power Modules ◽  
Gate Driver

SiC power semiconductors have the capability of greatly outperforming Si-based power devices. Faster switching and smaller on-state losses coupled with higher voltage blocking and temperature capabilities, make SiC a very attractive semiconductor for high performance, high power density power modules. However, the temperature capabilities and increased power density are fully utilized only when the gate driver is placed next to the SiC devices. This requires the gate driver to successfully operate under these extreme conditions with reduced or no heat sinking requirements, allowing the full realization of a high efficiency, high power density SiC power module. In addition, since SiC devices are usually connected in a half or full bridge configuration, the gate driver should provide electrical isolation between the high and low voltage sections of the driver itself. This paper presents a 225 degrees Celsius operable, Silicon-On-Insulator (SOI) high voltage isolated gate driver IC for SiC devices. The IC was designed and fabricated in a 1 μm, partially depleted, CMOS process. The presented gate driver consists of a primary and a secondary side which are electrically isolated by the use of a transformer. The gate driver IC has been tested at a switching frequency of 200 kHz at 225 degrees Celsius while exhibiting a dv/dt noise immunity of at least 45 kV/μs.

High Power Density, 48V Electrified Drivetrain Technology for Future Hybrid and Electric Vehicles

2019 ◽  
Author(s):  
William Drury ◽  
Chintanbhai Patel ◽  
Andrew Atkins ◽  
Anthony Wearing
Keyword(s):  
Power Density ◽  
Electric Vehicles ◽  
High Power ◽  
High Power Density

High-Power-Density and High-Gain δ-Doped In[sub 0.425]Al[sub 0.575]As∕In[sub 0.425]Ga[sub 0.575]As Low-Voltage for Operation

2007 ◽  
Vol 154 (3) ◽  
pp. H185 ◽  
Author(s):  
Jun-Chin Huang ◽  
Wei-Chou Hsu ◽  
Ching-Sung Lee ◽  
Dong-Hai Huang ◽  
Yuan-Cheng Yang
Keyword(s):  
Power Density ◽  
High Power ◽  
Low Voltage ◽  
High Gain ◽  
High Power Density

scholarly journals Design and Analysis of a Dual Rotor Multiphase Brushless DC Motor for its Application in Electric Vehicles

2021 ◽  
Vol 11 (6) ◽  
pp. 7846-7852
Author(s):  
M. Hussain ◽  
A. Ulasyar ◽  
H. Sheh Zad ◽  
A. Khattak ◽  
S. Nisar ◽  
...  
Keyword(s):  
Fault Tolerance ◽  
Power Density ◽  
Electric Vehicles ◽  
High Power ◽  
Operating Conditions ◽  
Design Parameters ◽  
High Power Density ◽  
Bldc Motor ◽  
Brushless Dc ◽  
Stator Current

The main objective of this paper is to study the effect of phase numbers in the dual rotor Brushless DC (BLDC) motor for its application in Electric Vehicles (EVs). The performance of two novel 5-, and 7-phase dual rotor BLDC motors is compared against the standard 3-phase dual rotor BLDC motor. The proposed motors combine the positive characteristics of multiphase BLDC motor and the dual rotor BLDC motor thus achieving better fault tolerance capability, high power density, and less per phase stator current. Finite Element Method (FEM) was used to design the 3-, 5-, and 7-phase dual-rotor BLDC motors. The design parameters and operating conditions are kept the same for a fair comparison. The stator current and torque performance of the proposed motors were obtained with FEM simulation and were compared with the standard 3-phase dual rotor BLDC motor. It is possible to use low power rating power electronics switches for the proposed motor. The simulation results also validate low torque ripples and high-power density in the proposed motors. Finally, the fault analysis of the designed motors shows that the fault tolerance capability increases as the phase number increases.

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