Physical simulation of semiconductor devices at high frequencies involves not only
semiconductor transport issues but also electromagnetic wave propagation issues. In
order to obtain the nonlinear and the large-signal characteristics of the semiconductor
devices, an electromagnetic model should replace the traditional quasi-static model in
the device simulator. In this paper, the advantages of a semiconductor device simulator
combining an electromagnetic and an electron transport models are presented. This
study is based on a semiconductor device simulator that couples a semiconductor model
to the 3D time-domain solution of Maxwell's equations. The electromagnetic wave
propagation effects on the millimeter-wave FETs are thoroughly analyzed. The use of
the electromagnetic model over the conventional quasi-static model provides the actual
device response at high frequencies. It also shows the nonlinear energy build-up along
the device width whereas the quasi-static model provides a linear increase of energy. The
combined model is capable of predicting the device nonlinearity and harmonic
distortion of amplifier circuits at large signal.
Advantages of Semiconductor Device Simulator
Combining Electromagnetic and Electron
Transport Models
