Performance analysis of Carbon Nanotube Field Effect Transistor with high K dielectric

2014 International Conference on Electronics and Communication Systems (ICECS) ◽

10.1109/ecs.2014.6892700 ◽

2014 ◽

Author(s):

Anoob Eapen Chacko ◽

Flavia Princess Nesamani ◽

I. Sujith ◽

M. B. Rekha Divakaran ◽

V. Lakshmi Prabha

Keyword(s):

Carbon Nanotube ◽

Performance Analysis ◽

Field Effect ◽

Field Effect Transistor ◽

High K ◽

Effect Transistor ◽

High K Dielectric

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Effect of Diameter and High-K Dielectric on Carbon Nanotube versus Nanowire Field Effect Transistor

Advanced Science Engineering and Medicine ◽

10.1166/asem.2019.2417 ◽

2019 ◽

Vol 11 (8) ◽

pp. 734-740

Author(s):

Suman Rani ◽

Anjana Kumari ◽

Balwinder Singh

Keyword(s):

Carbon Nanotube ◽

Field Effect ◽

Field Effect Transistor ◽

High K ◽

Effect Transistor ◽

High K Dielectric

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Performance Analysis of an Empirical Model of Carbon Nanotube Field Effect Transistor

2018 International Conference on Innovation in Engineering and Technology (ICIET) ◽

10.1109/ciet.2018.8660775 ◽

2018 ◽

Author(s):

Muntasir Mahdi ◽

Md. Anik Hossain ◽

Jibesh Kanti Saha

Keyword(s):

Carbon Nanotube ◽

Performance Analysis ◽

Empirical Model ◽

Field Effect ◽

Field Effect Transistor ◽

Effect Transistor

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Characterization of a sol-gel based high-k dielectric field effect transistor for cryogenic operation

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3006019 ◽

2008 ◽

Vol 26 (6) ◽

pp. 1887-1891 ◽

Cited By ~ 7

Author(s):

M. Ziaur Rahman Khan ◽

D. G. Hasko ◽

M. S. M. Saifullah ◽

M. E. Welland

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Sol Gel ◽

High K ◽

Effect Transistor ◽

High K Dielectric

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Technology computer-aided design simulation study for a strained InGaAs channel n-type metal-oxide-semiconductor field-effect transistor with a high-k dielectric oxide layer and a metal gate electrode

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3578466 ◽

2011 ◽

Vol 29 (3) ◽

pp. 032203 ◽

Cited By ~ 1

Author(s):

Shu-Tong Chang ◽

Chang-Chun Lee ◽

P.-H. Sun

Keyword(s):

Computer Aided Design ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate ◽

High K ◽

Effect Transistor ◽

High K Dielectric ◽

Aided Design

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Modeling and performance analysis of ballistic carbon nanotube field effect transistor (CNTFET)

Recent Advances in Space Technology Services and Climate Change 2010 (RSTS & CC-2010) ◽

10.1109/rstscc.2010.5712861 ◽

2010 ◽

Cited By ~ 3

Author(s):

T. Ravi ◽

V. Kannan

Keyword(s):

Carbon Nanotube ◽

Performance Analysis ◽

Field Effect ◽

Field Effect Transistor ◽

Effect Transistor ◽

And Performance

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Device Performance Analysis of Graphene Nanoribbon Field-Effect Transistor with Rare-Earth Oxide (La2O3) Based High-k Gate Dielectric

International Journal for Research in Applied Science and Engineering Technology ◽

10.22214/ijraset.2018.1257 ◽

2018 ◽

Vol 6 (1) ◽

pp. 1650-1690

Author(s):

M. K. Bera

Keyword(s):

Rare Earth ◽

Performance Analysis ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Rare Earth Oxide ◽

Graphene Nanoribbon ◽

Device Performance ◽

High K ◽

Effect Transistor

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Analog/RF performance analysis of coaxial carbon nanotube MOS field effect transistor from non-equilibrium Green’s function simulation

2008 IEEE International Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2008.4760651 ◽

2008 ◽

Author(s):

Yuchi Che ◽

Yadong Tao ◽

Feng Liu ◽

Xingye Zhou ◽

Jin He

Keyword(s):

Carbon Nanotube ◽

Performance Analysis ◽

Field Effect ◽

Field Effect Transistor ◽

Effect Transistor ◽

Rf Performance ◽

Non Equilibrium

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Modeling and performance analysis of Schottky barrier carbon nanotube field effect transistor SB-CNTFET

Journal of Computational Electronics ◽

10.1007/s10825-017-0996-5 ◽

2017 ◽

Vol 16 (3) ◽

pp. 593-600 ◽

Cited By ~ 1

Author(s):

Abdelali Diabi ◽

Abdesselam Hocini ◽

Souheil Mouetsi ◽

Djamel Khedrouche

Keyword(s):

Carbon Nanotube ◽

Performance Analysis ◽

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistor ◽

Effect Transistor ◽

And Performance

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Performance Analysis of Carbon Nanotube Field Effect Transistor Based Digital Circuits

2018 3rd International Conference for Convergence in Technology (I2CT) ◽

10.1109/i2ct.2018.8529803 ◽

2018 ◽

Author(s):

Shah Newaz ◽

S.M. Nizam Uddin ◽

Md. Khairul Hasan Neon ◽

Mohammad Imtiazul Haque

Keyword(s):

Carbon Nanotube ◽

Performance Analysis ◽

Field Effect ◽

Field Effect Transistor ◽

Digital Circuits ◽

Effect Transistor

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Tunnel field effect transistor with increased ON current, low-k spacer and high-k dielectric

Applied Physics Letters ◽

10.1063/1.3367880 ◽

2010 ◽

Vol 96 (12) ◽

pp. 122104 ◽

Cited By ~ 82

Author(s):

Costin Anghel ◽

Prathyusha Chilagani ◽

Amara Amara ◽

Andrei Vladimirescu

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

High K ◽

Effect Transistor ◽

Tunnel Field Effect Transistor ◽

High K Dielectric ◽

Low K

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