Device Performance Analysis of Graphene Nanoribbon Field-Effect Transistor with Rare-Earth Oxide (La2O3) Based High-k Gate Dielectric

M. K. Bera

doi:10.22214/ijraset.2018.1257

Device Performance Analysis of Graphene Nanoribbon Field-Effect Transistor with Rare-Earth Oxide (La2O3) Based High-k Gate Dielectric

International Journal for Research in Applied Science and Engineering Technology ◽

10.22214/ijraset.2018.1257 ◽

2018 ◽

Vol 6 (1) ◽

pp. 1650-1690

Author(s):

M. K. Bera

Keyword(s):

Rare Earth ◽

Performance Analysis ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Rare Earth Oxide ◽

Graphene Nanoribbon ◽

Device Performance ◽

High K ◽

Effect Transistor

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Impact of high-k gate dielectric with different angles of coverage on the electrical characteristics of gate-all-around field effect transistor: A simulation study

Results in Physics ◽

10.1016/j.rinp.2019.102823 ◽

2020 ◽

Vol 16 ◽

pp. 102823 ◽

Cited By ~ 2

Author(s):

Mohammad Karbalaei ◽

Daryoosh Dideban ◽

Hadi Heidari

Keyword(s):

Simulation Study ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Electrical Characteristics ◽

High K ◽

Effect Transistor ◽

High K Gate Dielectric

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Quantum Transport Simulation and Performance Analysis of Sub-10 nm Graphene Nanoribbon Field Effect Transistor

2019 5th International Conference on Advances in Electrical Engineering (ICAEE) ◽

10.1109/icaee48663.2019.8975601 ◽

2019 ◽

Author(s):

Md. Azizul Hasan ◽

Mainul Hossain ◽

Sharnali Islam

Keyword(s):

Performance Analysis ◽

Quantum Transport ◽

Field Effect ◽

Field Effect Transistor ◽

Graphene Nanoribbon ◽

Transport Simulation ◽

Effect Transistor ◽

And Performance

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Radio-frequency performance of a sub-100 nm metal-oxide field-effect transistor with high-k gate dielectric

Semiconductor Science and Technology ◽

10.1088/0268-1242/25/4/045029 ◽

2010 ◽

Vol 25 (4) ◽

pp. 045029 ◽

Cited By ~ 1

Author(s):

K Kakushima ◽

M Nakagawa ◽

P Ahmet ◽

K Tsutsui ◽

N Sugii ◽

...

Keyword(s):

Metal Oxide ◽

Radio Frequency ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

High K ◽

Effect Transistor ◽

High K Gate Dielectric

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Performance Analysis of Graphene Nanoribbon Field Effect Transistor (GNRFET) based 6T and 7T SRAMs

2020 23rd International Conference on Computer and Information Technology (ICCIT) ◽

10.1109/iccit51783.2020.9392713 ◽

2020 ◽

Author(s):

Tanvir Hossain ◽

Md Shyeem Rahman ◽

Md. Mushfiqur Rahman ◽

Ahmed Rabbi Arini Dibbo

Keyword(s):

Performance Analysis ◽

Field Effect ◽

Field Effect Transistor ◽

Graphene Nanoribbon ◽

Effect Transistor

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Performance enhancement of AlGaN/GaN metal-oxide-semiconductor heterojunction field-effect transistor (MOSHFET) with atomic layer deposition (ALD) of high-k HfAlO gate dielectric layer

2011 International Semiconductor Device Research Symposium (ISDRS) ◽

10.1109/isdrs.2011.6135162 ◽

2011 ◽

Cited By ~ 1

Author(s):

Bongmook Lee ◽

Young-Hwan Choi ◽

Casey Kirkpatrick ◽

Alex Q. Huang ◽

Veena Misra

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Performance Enhancement ◽

Gate Dielectric ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Deposition ◽

High K ◽

Effect Transistor

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Single shot measurement of the lifetime of a trapped electron in the gate dielectric of a high-k field effect transistor

Applied Physics Letters ◽

10.1063/1.3013576 ◽

2008 ◽

Vol 93 (19) ◽

pp. 193501 ◽

Cited By ~ 4

Author(s):

M. Ziaur Rahman Khan ◽

D. G. Hasko ◽

M. S. M. Saifullah ◽

M. E. Welland

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Single Shot ◽

High K ◽

Effect Transistor ◽

Trapped Electron

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Performance analysis of Z‐shaped gate dielectric modulated ( DM ) tunnel field‐effect transistor‐( TFET ) based biosensor with extended horizontal N+ pocket

International Journal of Numerical Modelling Electronic Networks Devices and Fields ◽

10.1002/jnm.2908 ◽

2021 ◽

Author(s):

N. Nagendra Reddy ◽

Deepak Kumar Panda

Keyword(s):

Performance Analysis ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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The Impact of Fringing Field on the Device Performance of a p-Channel Tunnel Field-Effect Transistor With a High-$\kappa$ Gate Dielectric

IEEE Transactions on Electron Devices ◽

10.1109/ted.2011.2173937 ◽

2012 ◽

Vol 59 (2) ◽

pp. 277-282 ◽

Cited By ~ 31

Author(s):

Abhijit Mallik ◽

Avik Chattopadhyay

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Device Performance ◽

Fringing Field ◽

Effect Transistor ◽

Tunnel Field Effect Transistor ◽

The Impact

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Modeling on drain current of high-k gate dielectric fully-depleted nanoscale germanium-on-insulator p-channel metal-oxide-semiconductor field-effect transistor

Acta Physica Sinica ◽

10.7498/aps.63.237304 ◽

2014 ◽

Vol 63 (23) ◽

pp. 237304

Author(s):

Bai Yu-Rong ◽

Xu Jing-Ping ◽

Liu Lu ◽

Fan Min-Min ◽

Huang Yong ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fully Depleted ◽

High K ◽

Effect Transistor

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Performance analysis of Carbon Nanotube Field Effect Transistor with high K dielectric

2014 International Conference on Electronics and Communication Systems (ICECS) ◽

10.1109/ecs.2014.6892700 ◽

2014 ◽

Author(s):

Anoob Eapen Chacko ◽

Flavia Princess Nesamani ◽

I. Sujith ◽

M. B. Rekha Divakaran ◽

V. Lakshmi Prabha

Keyword(s):

Carbon Nanotube ◽

Performance Analysis ◽

Field Effect ◽

Field Effect Transistor ◽

High K ◽

Effect Transistor ◽

High K Dielectric

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