The evaluation of copper migration during the die attach curing and second wire bonding process

2003 ◽  
Author(s):  
T.Y. Lin ◽  
K.L. Davison ◽  
W.S. Leong ◽  
S. Chua ◽  
J.S. Pan ◽  
...  
Keyword(s):  
Wire Bonding ◽  
Bonding Process ◽  
Die Attach

The evaluation of copper migration during the die attach curing and second wire bonding process

2005 ◽  
Vol 28 (2) ◽  
pp. 337-344 ◽  
Author(s):  
T.Y. Lin ◽  
M.G. Pecht ◽  
D. Das ◽  
Jisheng Pan ◽  
Zhu Wenhui
Keyword(s):  
Wire Bonding ◽  
Bonding Process ◽  
Die Attach

Analysis of Two Electrical Failures Caused by Die Attach of Exposed Pad Package

2014 ◽  
Author(s):  
Jinglong Li ◽  
Motohiko Masuda ◽  
Yi Che ◽  
Miao Wu
Keyword(s):  
Bonding Process ◽  
Die Attach ◽  
Die Bonding ◽  
Generic Analysis

Abstract Die attach is well known in die bonding process. Its electrical character is simple. But some failures caused by die attach are not so simple. And it is not proper to analyze by a generic analysis flow. The analysis of two failures caused by die attach are presented in this paper.

Failure Analysis on Power Trench MOSFET Devices with Copper Wire Bonds

2011 ◽  
Author(s):  
Huixian Wu ◽  
Arthur Chiang ◽  
David Le ◽  
Win Pratchayakun
Keyword(s):  
Failure Analysis ◽  
Copper Wire ◽  
New Technology ◽  
Analytical Techniques ◽  
Wire Bonding ◽  
Bonding Process ◽  
Wire Bonds ◽  
Copper Wire Bonding ◽  
Wet Chemical ◽  
Microelectronic Components

Abstract With gold prices steadily going up in recent years, copper wire has gained popularity as a means to reduce cost of manufacturing microelectronic components. Performance tradeoff aside, there is an urgent need to thoroughly study the new technology to allay any fear of reliability compromise. Evaluation and optimization of copper wire bonding process is critical. In this paper, novel failure analysis and analytical techniques are applied to the evaluation of copper wire bonding process. Several FA/analytical techniques and FA procedures will be discussed in detail, including novel laser/chemical/plasma decapsulation, FIB, wet chemical etching, reactive ion etching (RIE), cross-section, CSAM, SEM, EDS, and a combination of these techniques. Two case studies will be given to demonstrate the use of these techniques in copper wire bonded devices.

scholarly journals Optimal Parameter Design for IC Wire Bonding Process by Using Fuzzy Logic and Taguchi Method

IEEE Access ◽  
2016 ◽  
Vol 4 ◽  
pp. 3034-3045 ◽  
Author(s):  
Jinn-Tsong Tsai ◽  
Cheng-Chung Chang ◽  
Wen-Ping Chen ◽  
Jyh-Horng Chou
Keyword(s):  
Fuzzy Logic ◽  
Taguchi Method ◽  
Optimal Parameter ◽  
Wire Bonding ◽  
Bonding Process ◽  
Parameter Design

Manufacturability readiness of insulated Cu wire bonding process in PBGA package

2014 ◽  
Author(s):  
Leong HungYang ◽  
Yap BoonKar ◽  
Tan Chou Yong ◽  
Navas Khan ◽  
Mohd Rusli Ibrahim ◽  
...  
Keyword(s):  
Wire Bonding ◽  
Bonding Process

Technologies and Trends to Improve Power Electronic Packaging

2011 ◽  
Vol 2011 (1) ◽  
pp. 000430-000437
Author(s):  
M. Schneider-Ramelow ◽  
M. Hutter ◽  
H. Oppermann ◽  
J.-M. Göhre ◽  
S. Schmitz ◽  
...  
Keyword(s):  
High Reliability ◽  
Transient Liquid Phase ◽  
Wire Bonding ◽  
Temperature Cycling ◽  
Material Behavior ◽  
Process Selection ◽  
Chip Surface ◽  
Bonding Parameters ◽  
Strong Trend ◽  
Die Attach

In the realm of power modules a strong trend toward high temperature and high reliability applications can be observed, which entails new technological challenges, especially for the assembly and packaging of power semiconductors. Because of the well known failure mechanisms of established lead-free standard soldering and heavy aluminum wire bonding technologies, such as fatigue and creep of die attach material and wire bonds at thermal cycling, academic and industrial research focuses on more reliable interconnection technologies. A priority is the research of alternative top and bottom side chip interconnection materials or technologies to improve the temperature cycling capability of power chips that are typically assembled on ceramic substrates. The scientific focus is on Ag sintering as die attach and/or heavy ribbon bonding, for example with Al or bi-metal (Al-Cu). Another focus is the material behavior of ribbon bonds in combination with bonding machine improvements (higher bonding parameters, cutting tool). But there are other very promising technologies like transient liquid phase bonding, for example with Cu-Sn or Ag-Sn systems or Cu heavy wire bonding (up to 400 μm wire diameter) or Cu/Al-Bi metal ribbon bonding. Challenges posed by these technologies have to be discussed focusing on materials and process selection and reliability issues. Process temperatures and temperature profiles must be optimized, wire bonding machines and the chip surface structures as well as finish metallizations need to be adapted. This paper will give an overview of alternative power chip interconnection technologies and discuss the challenges related to processing and reliability.

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