Electroless and Electrolytic Copper Plating of Glass Interposer Combined with Metal Oxide Adhesion Layer for Manufacturing 3D RF Devices

Author(s):  
Zhiming Liu ◽  
Hailuo Fu ◽  
Sara Hunegnaw ◽  
Jun Wang ◽  
Michael Merschky ◽  
...  
2017 ◽  
Vol 2017 (1) ◽  
pp. 000458-000463
Author(s):  
Michael Merschky ◽  
Fabian Michalik ◽  
Martin Thoms ◽  
Robin Taylor ◽  
Diego Reinoso-Cocina ◽  
...  

Abstract With the trends towards miniaturization and heterogeneous integration, both IC and advanced substrate manufacturers are striving to meet the needs of next generation platforms, to increase the density of interconnects, and generate conductors featuring finer lines and spaces. Advanced manufacturing technologies such as Semi-Additive-Processing (SAP) and Advanced Modified-Semi-Additive-Processing (amSAP) were devised, realized and implemented in order to meet these requirements. Line and space (L/S) requirements of copper conductors will be below 5/5μm for advanced substrates, with 2/2μm L/S required for chip to chip connections in the near future. Herein we report about the performance of the new developed ferric sulfate based EcoFlash™ process for SAP and amSAP application with the focus on glass as the substrate and VitroCoat as thin metal oxide adhesion promotion layer. The adhesion promotion layer (about 5–10 nm thickness) is dip-coated by a modified sol-gel process followed by sintering which creates chemical bonds to the glass. The sol-gel dip coating process offers good coating uniformity on both Though-Glass-Via (TGV) and glass surfaces under optimized coating conditions. Uniform coating can be achieved up to aspect ratios of 10:1 by using a 300μm thick glass with 30μm diameter TGV. The thin adhesive layer enables electroless and electrolytic copper plating directly onto glass substrates. Excellent adhesion of electroless plated copper seed layer on glass can be achieved by using the adhesive layer and annealing technology. The thin adhesive layer is non-conductive and can be easily removed from the area between circuit traces together with the electroless copper seed layer by etching with a ferric sulfate based process. We have successfully integrated the adhesion layer and electroless and electrolytic copper plating technologies into semi-additive process and seed layer etching capable producing L/S below 10 μm.


2015 ◽  
Vol 2015 (1) ◽  
pp. 000365-000369 ◽  
Author(s):  
Zhiming Liu ◽  
Sara Hunegnaw ◽  
Hailuo Fu ◽  
Jun Wang ◽  
Tafadzwa Magaya ◽  
...  

Inorganic interposers made of glass are attractive for advanced high frequency applications and ultra- fine line patterning technology. Because glass combines a couple of benefits like large form factor, good coefficient of thermal expansion (CTE) matching to silicon, smooth surface and a low dielectric constant and loss tangent. Recently much progress has been made with respect to glass electrical and physical properties. This allows for handling of thin glass sheets down to 100 μm in a typical PCB panel format. Also advances have been made in the area of laser drilling allowing aspect ratio up to 1:10 for 25 μm diameter of through glass via (TGV). Another major challenge is the cost competitive and reliable metallization of smooth glass, a critical prerequisite for the use of glass substrates in the electronic packaging market. Plated copper does not adhere directly to glass. Sputtering technology typically also requires a 50 nm thick adhesion promoting metal layer (like Ti) before copper can be seeded. This metal layer could not be etched together with the copper and needs to be removed between traces by etching in an additional step. A volatile flammable solvent based metal oxide precursor coating solution has been used to make an adhesive metal oxide layer by a modified sol-gel process. To prevent potential safety issue for mass production water based metal oxide precursor coating solution so called VitroCoat GI W has been developed. The VitroCoat GI W solution can be dip-coated on flat glass surface and TGVs followed by sintering to form an ultrathin metal oxide adhesion layer (about 10nm). The thin adhesive layer enables electroless and electrolytic copper plating directly onto glass substrates without changing any of the glass properties or impacting high frequency performance. The thin metal oxide adhesive layer is non-conductive and can be easily removed from the area between circuit traces. This paper will focus on the coating uniformity and capability of VitroCoat GI W on flat glass surface and TGVs and the adhesion of wet chemical metallization on glass interposer. This adhesion layer can be used for copper fine line patterning on glass and radio frequency (RF) device fabrication.


2011 ◽  
Vol 2011 (DPC) ◽  
pp. 001535-001554
Author(s):  
Simon Bamberg ◽  
Ralf Bruening ◽  
Johannes Etzkorn ◽  
Frank Bruening

The focus of the chip and IC substrate manufacturing industry for interposers is currently shifting from organic substrates to inorganic materials. Interposers overcome the dimensional mismatch between a die and an organic PWB substrate and need to buffer the differences in thermal expansion between these two materials. While inorganics like silicon and glass, have a low CTE value compared to organic material, glass has some significant advantages over silicon. These are namely material cost, availability in panel size and a better electrical insulation. In order to further increase the cost advantage, metallization could be done by either electroless or electrolytic copper plating as an alternative route to sputter technology. Both wet chemical processes are well established in PWB manufacturing and need adaptation to glass substrates. Compared to sputtering, 3D-features can be covered with a wet chemical treatment in a comparatively economical process. Filling of TGVs (Through Glass Vias) by electrolytic copper plating requires the presence of a conductive film which is created by applying electroless copper deposition of typically 300–500nm thickness. The general issue is poor adhesion to the smooth glass surfaces. To improve adhesion between glass and metal, various treatments were assessed in this study: Mechanical anchoring was achieved by etching the substrate (subtractive) as well as by depositing nano-sized silica particles (additive). Both treatments are in solution and 3D-features are accessible in contrast to a purely mechanical approach. Surface treatments without inducing additional roughness included the adsorption of functional metal-affine polyelectrolytes and silanization for conditioning which enhanced the adhesion of the copper layer to various degrees. To study the impact of chemical formulation on strain/stress development and relaxation in the film as a key impact factor for blister (adhesion) performance, the electroless copper layer growth was monitored by in-situ XRD methods during and after deposition.


2002 ◽  
Vol 520 (1-2) ◽  
pp. 3-5 ◽  
Author(s):  
Gianfranco Pacchioni

2003 ◽  
Vol 779 ◽  
Author(s):  
M. Legros ◽  
G. Dehm ◽  
T.J. Balk ◽  
E. Arzt ◽  
O. Bostrom ◽  
...  

AbstractPlastic deformation due to thermal stresses has been investigated for different metallic films deposited on Si or α-alumina substrates. We conducted post-mortem TEM and SEM investigations of samples that underwent thermal cycles in order to capture the microstructural changes imposed by thermal stresses. The ultimate goal is to determine the dominant plasticity mechanisms responsible for such changes. In-situ thermal cycles performed inside the TEM allowed direct and real-time observations of dislocation behaviour under stress. It is shown that dislocation density drops in Al/Si, Au/Si and in Cu/α-alumina thin film systems. Except in the case of pseudo-epitaxial Cu on sapphire, the interaction of dislocations with the interfaces (passivation, oxide, adhesion layer) is attractive and leads to the disappearance of interfacial dislocations. In this light, the generalized observation of high tensile stresses that arise in metallic films at the end of cooling is explained in terms of insufficient dislocation sources instead of classic strain hardening. Diffusional processes can substitute for a lack of dislocation, but the low relaxation strain rate that would be excpected should lead to high stresses during the cooling stages of thermal cycles.


2016 ◽  
Vol 163 (5) ◽  
pp. D201-D205 ◽  
Author(s):  
Kyohei Okabe ◽  
Takahiro Kagami ◽  
Yoshio Horiuchi ◽  
Osamu Takai ◽  
Hideo Honma ◽  
...  

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