Effects of Fast Switching Semiconductors Operating Variable Speed Low Voltage Machines

2019 ◽  
Author(s):  
Moritz Kilper ◽  
Sandra Fickel ◽  
Hristian Naumoski ◽  
Kay Hameyer
Keyword(s):  
Low Voltage ◽  
Variable Speed ◽  
Fast Switching ◽  
Operating Variable

High Voltage and Fast Switching Reverse Recovery Characteristics of 4H-SiC PiN Diode

2014 ◽  
Vol 778-780 ◽  
pp. 841-844 ◽  
Author(s):  
Koji Nakayama ◽  
Shuji Ogata ◽  
Toshihiko Hayashi ◽  
Tetsuro Hemmi ◽  
Atsushi Tanaka ◽  
...  
Keyword(s):  
High Voltage ◽  
Recovery Time ◽  
Carrier Lifetime ◽  
Low Voltage ◽  
Reduction Rate ◽  
Drift Region ◽  
Pin Diode ◽  
Fully Depleted ◽  
Fast Switching ◽  
Reverse Recovery Time

The reverse recovery characteristics of a 4H-SiC PiN diode under higher voltage and faster switching are investigated. In a high-voltage 4H-SiC PiN diode, owing to an increased thickness, the drift region does not become fully depleted at a relatively low voltage Furthermore, an electron–hole recombination must be taken into account when the carrier lifetime is equal to or shorter than the reverse recovery time. High voltage and fast switching are therefore needed for accurate analysis of the reverse recovery characteristics. The current reduction rate increases up to 2 kA/μs because of low stray inductance. The maximum reverse voltage during the reverse recovery time reaches 8 kV, at which point the drift layer is fully depleted. The carrier lifetime at the high level injection is 0.086 μs at room temperature and reaches 0.53 μs at 250 °C.

Simplified All‐Solid‐State WO 3 Based Electrochromic Devices on Single Substrate: Toward Large Area, Low Voltage, High Contrast, and Fast Switching Dynamics

2020 ◽  
Vol 7 (3) ◽  
pp. 1901663 ◽  
Author(s):  
Pierluigi Cossari ◽  
Marco Pugliese ◽  
Cataldo Simari ◽  
Alessio Mezzi ◽  
Vincenzo Maiorano ◽  
...  
Keyword(s):  
Solid State ◽  
Low Voltage ◽  
High Contrast ◽  
Electrochromic Devices ◽  
Large Area ◽  
Fast Switching ◽  
Single Substrate ◽  
Switching Dynamics

scholarly journals A low‐power fast‐switching write‐and‐standby shared assist circuit for low‐voltage SRAMs

2022 ◽  
Author(s):  
Jinn‐Shyan Wang ◽  
Chien‐Tung Liu ◽  
Zhi‐Rong Liu ◽  
Shao‐Zhi Wang ◽  
Jyun‐Jiea Kang
Keyword(s):  
Low Power ◽  
Low Voltage ◽  
Fast Switching

scholarly journals Efficiency Analysis of Low Electric Power Drives Employing Induction and Synchronous Reluctance Motors in Pump Applications

Energies ◽  
2019 ◽  
Vol 12 (6) ◽  
pp. 1144 ◽  
Author(s):  
Vadim Kazakbaev ◽  
Vladimir Prakht ◽  
Vladimir Dmitrievskii ◽  
Mohamed Ibrahim ◽  
Safarbek Oshurbekov ◽  
...  
Keyword(s):  
Low Voltage ◽  
Numerical Models ◽  
Frequency Converter ◽  
Experimental Tests ◽  
Variable Speed ◽  
Ac Drives ◽  
Synchronous Reluctance Motor ◽  
Alternative Approach ◽  
Reluctance Motor ◽  
Computational Comparison

Due to the rapid increase in the number of variable speed AC drives, the analysis of their energy efficiency has become highly essential. However, such an analysis requires consideration of a wide variety of factors. This includes considering the energy loss in the frequency converter, depending on the motor type. In this article, a computational comparison of the energy properties of variable frequency pump drive employing two types of electric machines, i.e. an induction and a synchronous reluctance motor, is presented. The effect of the motor type on the losses in a low-voltage two-stage frequency converter using analytical and numerical models, with a further comparison, is investigated. Furthermore, an alternative approach to determine the current magnitude and power factor of the load of the converter is suggested. Eventually, this study provides a quantitative estimate of the increase in losses in the converter caused by using the two different motor types. Several experimental tests are conducted on induction and synchronous 1.1 kW reluctance motors.

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