Electrical performance of fiberglass crossarms aged in transmission line

Author(s):  
S. Grzybowski ◽  
E.B. Jenkins
2019 ◽  
Vol 136 ◽  
pp. 04057
Author(s):  
Xianri Wang ◽  
Xinmin Yu

The selection of insulator is analyzed and studied in detail in combination with climate and pollution.In this paper, several comparison and selection schemes are studied in detail from the aspects of electrical performance, mechanical performance, economic performance and so on. Through the analysis of the whole life cycle and the combination of the actual situation of the project, the reasonable selection of insulators is carried out to make use of insulators to reach the optimal.


2013 ◽  
Vol 423-426 ◽  
pp. 2563-2569
Author(s):  
Hong Lei Yang ◽  
Shi Bin Liang ◽  
Xue Peng Miao ◽  
Min Cao ◽  
Ming Chang

On-line monitoring of lightning,ice,short circuit on electric transmission line and insulator's operation state is of great significance to ensure the safe and stable operation of the electric transmission line.An intelligent composite insulator,in which the core rod has fiber Bragg gratings is developed.lightning,ice,short circuit on electric transmission line and insulator's operation state can be reflected by monitoring the center wavelengths of the fiber Bragg gratings.The temperature, strain response and electrical performance testing experiments on 110 kV fiber composite insulator were done,the result indicates that the optical fiber composite insulator can measure the temperature accurately;the load of composite insulator can be monitored approximately by no. 2 and no.4 monitoring sites;the110 kV fiber composite insulator’s dry lightning impulse withstand voltage is 421 kV,the normal polarity of steep wave impulse voltage withstand voltage is 434 kV(steepness:1206kV/μs),the negative polarity withstand voltage is 444 kV(steepness:1132kV/μs)and the dry power frequency withstand voltage is 230 kV at the altitude of 1970m.


2017 ◽  
Vol 9 (8) ◽  
pp. 1679-1686
Author(s):  
Behnam Banan ◽  
Farhad Shokraneh ◽  
Pierre Berini ◽  
Odile Liboiron-Ladouceur

A study on the microwave performance of a metallic transmission line capable of simultaneously transmitting microwave and optical signals is presented targeting millimeter-long interconnects. Conventional analytical solution is used to find the optimal structure for a given characteristic impedance. Then, functionality of the link is validated through S-parameter measurements for 3–13 mm long lines. The waveguide parameters, such as resistance, inductance, capacitance, and conductance are extracted based on a lumped circuit model. The modeling enables structure optimization for interconnect bandwidth density of 1 Gb/s/μm and more.


2014 ◽  
Vol 2014 (DPC) ◽  
pp. 000526-000544
Author(s):  
Kai Liu ◽  
YongTaek Lee ◽  
HyunTai Kim ◽  
MaPhooPwint Hlaing ◽  
Gwang. Kim ◽  
...  

Wafer-level packages, such as embedded-Wafer-Level-Ball-Grid-Array (eWLB) packages, can provide smaller form-factors and thinner profiles, as finer design rules on W/S, and thinner layers (both metal layers and passivation layers) can be applied in such packages. However, a routine conversion from fcBGA to eWLB does not guarantee the electrical performance will be the same. Designer's electrical skills still play important roles to reduce design cycle-time for meeting critical electrical performance. We compare the performance from typical fcBGA and eWLB packages in the following areas: insertion-loss for signal nets, power-ground impedance for P/G nets, and cross-talk for both signal nets and P/G nets. Simulation data for both fcBGA and eWLB, along with some experimental data, is provides in the paper. As metal-layer thickness (4um-12um) in eWLB is typically smaller, and finer design rules are used, the cross-section of a signal trace is smaller, which translates a higher metal-loss in unit- length. In addition, as the passivation layers in eWLB have slightly worse loss-tangent properties, it's substrate-loss is also little higher. The overall aspects above result in higher transmission-line (TML) loss in eWLB in unit-length. But as shorter trace-routing is possible in eWLB, given finer design rules, the overall transmission-line loss could be equivalent to that of a fcBGA transmission-line. The finer design rules on vias in eWLB facilitate to implement Power/Ground (P/G) planes in a more continuous way, and contribute to less P/G impedance. In addition, as the layer-to-layer separation is smaller, decoupling capacitance inheritably made between the P/G planes is larger, which eventually helps to provide a better or smaller P/G loop-impedance. Because of less separation distance between metal layers in eWLB, the signal traces see much closer GND planes (e.g., 5um in eWLB versus 50um in fcBGA) in their proximities. The closer GND planes make the electrical fields more locally contained. As a result, in a typical eWLB design (e.g., 12um/12um for L/S), the cross-talk between DDR data buses is typically smaller than that from a fcBGA design (e.g., 30um/30um for L/S).


Author(s):  
L. M. Gignac ◽  
K. P. Rodbell

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.


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