A New Die Attach Material for High Power Electronic Devices

Author(s):  
Zhang Ruifen ◽  
Donald Nantes ◽  
Teo Lingling
2017 ◽  
Vol 2017 (HiTEN) ◽  
pp. 000213-000217
Author(s):  
Tiago M. L. Teixeira ◽  
Juan Bevan

Abstract: The goal of this study was to achieve an improvement on power conversion based on SiC High Power Electronic devices at high temperature (+220°C). Two different devices (a SiC Schottky Diode & a Schottky Diode Bridge Rectifier) were studied using different substrates, die attach materials and die. Positive results were achieved; it was found a strong relationship between wire bond strength and die attach material; it was evident the two different die chosen for the study resulted in different electrical performance on the devices; and that, from the arrays of tests, there was no evident data to prefer one of the two substrates chosen for the study.


Author(s):  
Ronald H. W. Hoppe ◽  
Svetozara Petrova ◽  
Volker Schulz

The power stable of the converters is actually coming from some milliwatts (as in a cellphone) to dozens of megawatts in an HVDC gearbox body. Along with "classic" electronic devices, power streams, as well as current, are actually utilized to hold relevant information, whereas along with power electronic devices, they lug power. This inverter may magnify source of power like gas- mobiles, little wind turbines, as well as photo-voltaic assortments (i.e. it agrees with for circulated power treatments). The principles of resources and also changes are actually described and also categorized. Coming from the general regulations of resource propinquities, a universal procedure of power converter formation exists.


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