Technological Breakthroughs in Growth Control of Silicon Carbide for High Power Electronic Devices

2004 ◽  
Vol 43 (10) ◽  
pp. 6835-6847 ◽  
Author(s):  
Hiroyuki Matsunami
Keyword(s):  
Silicon Carbide ◽  
High Power ◽  
Electronic Devices ◽  
Growth Control ◽  
Power Electronic

Topology Optimization of High Power Electronic Devices

2001 ◽  
pp. 119-131
Author(s):  
Ronald H. W. Hoppe ◽  
Svetozara Petrova ◽  
Volker Schulz
Keyword(s):  
Topology Optimization ◽  
High Power ◽  
Electronic Devices ◽  
Power Electronic

scholarly journals Development of Technology for High-Power Industry Converters

2019 ◽  
Vol 8 (10) ◽  
pp. 3130-3132 ◽  
Keyword(s):  
Wind Turbines ◽  
High Power ◽  
Electronic Devices ◽  
Relevant Information ◽  
Power Industry ◽  
Power Converter ◽  
Power Electronic ◽  
Photo Voltaic ◽  
Universal Procedure

The power stable of the converters is actually coming from some milliwatts (as in a cellphone) to dozens of megawatts in an HVDC gearbox body. Along with "classic" electronic devices, power streams, as well as current, are actually utilized to hold relevant information, whereas along with power electronic devices, they lug power. This inverter may magnify source of power like gas- mobiles, little wind turbines, as well as photo-voltaic assortments (i.e. it agrees with for circulated power treatments). The principles of resources and also changes are actually described and also categorized. Coming from the general regulations of resource propinquities, a universal procedure of power converter formation exists.

scholarly journals ENHANCING POWER ELECTRONIC DEVICES WITH WIDE BANDGAP SEMICONDUCTORS

2006 ◽  
Vol 16 (02) ◽  
pp. 545-556 ◽  
Author(s):  
BURAK OZPINECI ◽  
MADHU SUDHAN CHINTHAVALI ◽  
LEON M. TOLBERT
Keyword(s):  
Silicon Carbide ◽  
Field Strength ◽  
Schottky Diodes ◽  
Electronic Devices ◽  
Wide Bandgap ◽  
Power Electronic ◽  
Different Temperatures ◽  
Bandgap Semiconductors ◽  
Switching Characteristics ◽  
Unipolar Devices

Silicon carbide ( SiC ) unipolar devices have much higher breakdown voltages than silicon ( Si ) unipolar devices because of the ten times greater electric field strength of SiC compared with Si . 4H - SiC unipolar devices have higher switching speeds due to the higher bulk mobility of 4H - SiC compared to other polytypes. In this paper, four commercially available SiC Schottky diodes with different voltage and current ratings, VJFET, and MOSFET samples have been tested to characterize their performance at different temperatures ranging from -50°C to 175°C. Their forward characteristics and switching characteristics in this temperature range are presented. The characteristics of the SiC Schottky diodes are compared with those of a Si pn diode with comparable ratings.

scholarly journals Фотовольтаические характеристики светодиодов с двумя последовательными p-n-переходами

2021 ◽  
Vol 47 (1) ◽  
pp. 47
Author(s):  
А.А. Соколовский ◽  
В.В. Моисеев
Keyword(s):  
Low Power ◽  
Spectral Range ◽  
High Power ◽  
Power Supply ◽  
Output Voltage ◽  
Optical Radiation ◽  
Electronic Devices ◽  
Power Electronic ◽  
Direct Power ◽  
Photovoltaic Characteristics

In this work, we investigated the photovoltaic characteristics of high-power IR LEDs manufactured by OSRAM GmbH based on structures with two vertically stacked p-n junctions. The spectral range of operation of PVTs based on LEDs with different radiation wavelengths was determined, and it was shown that the efficiency of photovoltaic conversion in them reaches more than 30% at a wavelength of 808 nm. The high (up to 2.6 V) output voltage of such converters allows them to be used for direct power supply of low-power electronic devices with optical radiation.

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