Slope only sense amplifier with 4.5ns sense delay for 8Mbit memory sector, employing in situ current monitoring with 66% write speed improvement in 40nm embedded flash for automotive

ABSTRACTIon implantation in semiconductor devices frequently leads to a substantial wafer surface charge build up. Control of this charge during high current implantation is a major process issue, as it may affect the yield and reliability of thin dielectric layers. In addition, the charge build up may affect the ion beam resulting in a non-uniform implant and a reduction in device yield. Control of a specific machine parameter, that will give the charge condition of the ion implanter will enable to neutralize the charge build up.In this study, Disk Current Monitoring (DCM) is shown to be a reliable method for monitoring the Electron Shower (ES) performance in real time. A correlation was found between DCM level and yields, and between DCM level and breakdown voltage, as well as different maintenance activities regarding me ES. A simple 5 steps method is described to achieve a reliable, real time charge monitor, to insure operation within the “High Yield Range”.

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In-situ eddy current monitoring of structural components in nuclear power plants

Journal of Advanced Science ◽

10.2978/jsas.17.68 ◽

2005 ◽

Vol 17 (1/2) ◽

pp. 68-69

Author(s):

Takashi KASUYA ◽

Tetsuya UCHIMOTO ◽

Toshiyuki TAKAGI ◽

Tetsuo SHOJI

Keyword(s):

Eddy Current ◽

Nuclear Power ◽

Power Plants ◽

Nuclear Power Plants ◽

Structural Components ◽

Current Monitoring

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A 1-Mb 28-nm 1T1MTJ STT-MRAM With Single-Cap Offset-Cancelled Sense Amplifier and In Situ Self-Write-Termination

IEEE Journal of Solid-State Circuits ◽

10.1109/jssc.2018.2872584 ◽

2019 ◽

Vol 54 (1) ◽

pp. 231-239 ◽

Cited By ~ 8

Author(s):

Qing Dong ◽

Zhehong Wang ◽

Jongyup Lim ◽

Yiqun Zhang ◽

Mahmut E. Sinangil ◽

...

Keyword(s):

Sense Amplifier ◽

28 Nm

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IN-SITU DIAGNOSIS AND CONTROL OF CRYSTAL GROWTH PROCESS BY MEANS OF ELECTRIC POTENTIALS

International Journal of Modern Physics B ◽

10.1142/s0217979202015455 ◽

2002 ◽

Vol 16 (28n29) ◽

pp. 4373-4379

Author(s):

E. G. TSVETKOV ◽

V. I. TYURIKOV

Keyword(s):

Crystal Growth ◽

Crystallization Rate ◽

Growth Period ◽

Double Electric Layer ◽

Temperature Phase ◽

Growth Processes ◽

Electric Potentials ◽

The Difference ◽

Current Monitoring

The paper discussed a possibility of using new approaches for in-situ diagnosis growth processes of large crystals as well as solving some specific problems of controlling them. They are based on the current monitoring of changes in the differences of electric potential between growing crystals and crystallization medium. It is obvious that this monitoring reflects such important crystallization processes as accumulation of charge at the crystal interface and electric screening of it, growth of concentration of subphase formation at the interface (later, inclusions), current change in the mass crystallization rate, etc. This change in the rate suggests a new concept of automation of crystal growth processes, based on minimization of the difference in the current and initially predetermined change in Δϕ through inversely-related adjustment of the temperature of crystallization medium. We have experimentally substantiated the possibility of using various outer electric potentials for modification of processes in a double electric layer at the interface and extension of growth period under fairly favorable conditions. The system of low-temperature phase of barium metaborate crystal and molten solution as crystallization medium was taken for a model one.

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A 1Mb 28nm STT-MRAM with 2.8ns read access time at 1.2V VDD using single-cap offset-cancelled sense amplifier and in-situ self-write-termination

2018 IEEE International Solid - State Circuits Conference - (ISSCC) ◽

10.1109/isscc.2018.8310393 ◽

2018 ◽

Cited By ~ 22

Author(s):

Qing Dong ◽

Zhehong Wang ◽

Jongyup Lim ◽

Yiqun Zhang ◽

Yi-Chun Shih ◽

...

Keyword(s):

Access Time ◽

Sense Amplifier

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An in situ electrical measurement technique via a conducting diamond tip for nanoindentation in silicon

Journal of Materials Research ◽

10.1557/jmr.2007.0100 ◽

2007 ◽

Vol 22 (3) ◽

pp. 578-586 ◽

Cited By ~ 53

Author(s):

S. Ruffell ◽

J.E. Bradby ◽

J.S. Williams ◽

O.L. Warren

Keyword(s):

Electrical Properties ◽

Measurement Technique ◽

Electrical Characterization ◽

Electrical Measurement ◽

Variable Voltage ◽

Current Voltage ◽

Technical Issues ◽

Loading And Unloading ◽

Current Monitoring

An in situ electrical measurement technique for the investigation of nanoindentation using a Hysitron Triboindenter is described, together with details of experiments to address some technical issues associated with the technique. Pressure-induced phase transformations in silicon during indentation are of particular interest but are not fully understood. The current in situ electrical characterization method makes use of differences in electrical properties of the phase-transformed silicon to better understand the sequence of transformations that occur during loading and unloading. Here, electric current is measured through the sample/indenter tip during indentation, with a fixed or variable voltage applied to the sample. This method allows both current monitoring during indentation and the extraction of current-voltage (I-V) characteristics at various stages of loading. The work presented here focuses on experimental issues that must be understood for a full interpretation of results from nanoindentation experiments in silicon. The tip/sample contact and subsurface electrical resistivity changes dominate the resultant current measurement. Extracting the component of contact resistance provides an extremely sensitive method for measuring the electrical properties of the material immediately below the indenter tip, with initial results from indentation in silicon showing that this is a very sensitive probe of subsurface structural and electrical changes.

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