In situ bias current monitoring of nucleation for epitaxial diamonds on 3C-SiC/Si substrates

2018 ◽  
Vol 88 ◽  
pp. 158-162 ◽  
Author(s):  
Junya Yaita ◽  
Takeru Suto ◽  
Meralys-Reyes Natal ◽  
Stephen E. Saddow ◽  
Mutsuko Hatano ◽  
...  
Keyword(s):  
Bias Current ◽  
Si Substrates ◽  
Current Monitoring

In Situ Diagnostics of Vuv Laser Cvd of Semiconductor Interfaces by Ftir Spectroscopy and Spectroscopic Ellipsometry

1995 ◽  
Vol 397 ◽  
Author(s):  
M. Barth ◽  
J. Knobloch ◽  
P. Hess
Keyword(s):  
Film Thickness ◽  
Bulk Material ◽  
Substrate Surface ◽  
Cluster Formation ◽  
Interface Layer ◽  
Native Oxide ◽  
Initial Growth ◽  
Difference Spectra ◽  
Si Substrates

ABSTRACTThe growth of high quality amorphous hydrogenated semiconductor films was explored with different in situ spectroscopic methods. Nucleation of ArF laser-induced CVD of a-Ge:H on different substrates was investigated by real time ellipsometry, whereas the F2 laser (157nm) deposition of a-Si:H was monitored by FTIR transmission spectroscopy. The ellipsometric studies reveal a significant influence of the substrate surface on the nucleation stage, which in fact determines the electronic and mechanical properties of the bulk material. Coalescence of initial clusters occurs at a thickness of 16 Å for atomically smooth hydrogen-terminated c-Si substrates, whereas on native oxide covered c-Si substrates the bulk volume void fractions are not reached until 35 Å film thickness. For the first time we present a series of IR transmission spectra with monolayer resolution of the initial growth of a-Si:H. Hereby the film thickness was measured simultaneously using a quartz crystal microbalance with corresponding sensitivity. The results give evidence for cluster formation with a coalescence radius of about 20 Å. Difference spectra calculated for layers at different depths with definite thickness reveal that the hydrogen-rich interface layer stays at the substrate surface and does not move with the surface of the growing film. The decrease of the Urbach energy switching from native oxide to H-terminated substrates suggests a strong influence of the interface morphology on the bulk material quality.

Interfacial adhesion of nanoporous zeolite thin films

2006 ◽  
Vol 21 (2) ◽  
pp. 505-511 ◽  
Author(s):  
Lili Hu ◽  
Junlan Wang ◽  
Zijian Li ◽  
Shuang Li ◽  
Yushan Yan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Interfacial Adhesion ◽  
Interfacial Strength ◽  
Future Generation ◽  
In Situ Growth ◽  
Seeded Growth ◽  
Si Substrates ◽  
Film Substrate

Nanoporous silica zeolite thin films are promising candidates for future generation low-dielectric constant (low-k) materials. During the integration with metal interconnects, residual stresses resulting from the packaging processes may cause the low-k thin films to fracture or delaminate from the substrates. To achieve high-quality low-k zeolite thin films, it is important to carefully evaluate their adhesion performance. In this paper, a previously reported laser spallation technique is modified to investigate the interfacial adhesion of zeolite thin film-Si substrate interfaces fabricated using three different methods: spin-on, seeded growth, and in situ growth. The experimental results reported here show that seeded growth generates films with the highest measured adhesion strength (801 ± 68 MPa), followed by the in situ growth (324 ± 17 MPa), then by the spin-on (111 ± 29 MPa). The influence of the deposition method on film–substrate adhesion is discussed. This is the first time that the interfacial strength of zeolite thin films-Si substrates has been quantitatively evaluated. This paper is of great significance for the future applications of low-k zeolite thin film materials.

Investigation of Pt Bottom Electrodes for "In-Situ" Deposited Pb(Zr,Ti)O3 (PZT) thin Films

1991 ◽  
Vol 243 ◽  
Author(s):  
Rainer Bruchhaus ◽  
Dana Pitzer ◽  
Oliver Eibl ◽  
Uwe Scheithauer ◽  
Wolfgang Hoesler
Keyword(s):  
Elevated Temperatures ◽  
Diffusion Processes ◽  
Rutherford Backscattering Spectrometry ◽  
Layer Sequence ◽  
Si Substrates ◽  
Transmission Electron ◽  
In Situ Deposition ◽  
Electron Spectrometry ◽  
Heating Up

AbstractThe deposition of the bottom electrode plays a key role in the fabrication of ferroelectric capacitors. Processing at elevated temperatures of up to 800°C can give rise to diffusion processes and thereof formation of harmful dielectric layers.In this paper we used Rutherford backscattering spectrometry (RBS), Auger electron spectrometry (AES) and transmission electron microscopy (TEM) to study Pt/Ti/SiO2/Si substrates with various thicknesses of the Ti and Pt layers. During heating up to about 450°C in vacuum the initial layer sequence remains unchanged. However, drastic changes occur when the electrodes are exposed to Ar/O2 atmosphere during heat treatment. Oxidation induced diffusion of Ti into Pt and oxidation of Ti were observed. A Pt electrode with a 100 nm thick Ti adhesion layer proved to be suitable for the "in-situ" deposition of PZT films.

Surface Reactions of Metal Catalysts for Carbon Nanotubes on an Oxide Thin Layer/Si Substrates Studied by in-situ Micro X-ray Adsorption Spectroscopy using SPELEEM

2006 ◽  
Vol 967 ◽  
Author(s):  
Fumihiko Maeda ◽  
Hiroki Hibino ◽  
Satoru Suzuki ◽  
FangZhun Guo ◽  
Yoshio Watanabe
Keyword(s):  
Electron Microscopy ◽  
Oxide Layer ◽  
X Ray ◽  
Si Substrates ◽  
Microscopy Image ◽  
Special Surface ◽  
Void Area ◽  
Low Energy Electron ◽  
Photoemission Electron

ABSTRACTTo clarify the reaction process of Co and Fe with a oxide layer on Si substrates, the annealing processes were analyzed using spectroscopic photoemission and low-energy electron microscopy for a special surface where oxide areas and clean substrate areas (voids) coexist closely in a micrometer-order view. From analyses of XAS spectra and edge jump ratios obtained from the photoemission electron microscopy image, we clarified that Co atoms in the void area remain because of the formation of silicides, but that those on the oxide layer disappear because metallic Co atoms easily diffuse. In contrast, in the case of Fe, we found the formation of various silicides and their gradual diffusion into Si substrate even in the form of silicides.

In‐Situ Fabrication of YBa2Cu3O7‐x Superconducting Thin Films Directly on Silicon Substrates with Tc0 > 77K

1989 ◽  
Vol 169 ◽  
Author(s):  
C. B. Lee ◽  
R. K. Singh ◽  
S. Sharan ◽  
A. K. Singh ◽  
P. Tiwari ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Pulses ◽  
Superconducting Film ◽  
Laser Evaporation ◽  
Silicon Substrates ◽  
Superconducting Thin Films ◽  
Si Substrates ◽  
In Situ Fabrication ◽  
Substrate Temperatures

AbstractWe report in‐situ fabrication of c‐axis textured YBa2Cu3O7‐x superconducting thin films with Tco > 77K on unbuffered silicon substrates by the biased pulsed laser evaporation (PLE) technique in the temperature range of 550‐650°C. At substrate temperatures below 550°C, no c‐axis texturing of the superconducting film was observed. The YBa2Cu3O7‐x superconducting films were fabricated by ablating a bulk YBa2Cu3O7 target by a XeCl excimer laser (λ = 308 nm, τ = 45 × 10‐9 sec) in a chamber maintained at an oxygen pressure of 0.2 torr . The thickness of the films was varied from 0.3 to 0.5 nm depending on the number of laser pulses. Extensive diffusion was observed in thin films deposited at substrate temperatures above 550°C. However, microstructurally, with increase in the substrate temperature the films exhibited larger grain size and greater degree of c‐axis texturing (measured by the ratio of the (005) and (110) X‐ray diffraction peaks). This was found to give rise to better superconducting properties with Tco exceeding 77 K for YBa2Cu3O7‐x films deposited on Si substrates at 650°C.

In Situ Monitoring of the Smear-Out of the Ge Profile in GAS Source SiGe MBE Using Rheed Intensity Oscillations

1992 ◽  
Vol 263 ◽  
Author(s):  
K. Werner ◽  
S. Butzke ◽  
J.W. Maes ◽  
O.F.Z. Schannen ◽  
J. Trommel ◽  
...  
Keyword(s):  
Growth Rate ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Catalytic Effect ◽  
Growth Conditions ◽  
In Situ Monitoring ◽  
Marked Contrast ◽  
Si Substrates ◽  
Gas Source

ABSTRACTWe have studied the deposition of GexSi1−x layers on (100) Si substrates by gas source molecular beam epitaxy (GSMBE) using disilane and germane.The investigation of RHEED intensity oscillations during growth reveals the well known rate enhancement obtained when adding a small amount of germane to the disilane flux. However, when exposing a previously deposited Ge layer to a pure disilane flux the growth rate during the first few monolayers remains at an enhanced value but returns to its homoepitaxial value after about 10 to 15 monolayers. This behaviour was observed under a variety of growth conditions. It is in marked contrast to the experience obtained in conventional Si/Ge MBE and suggests a catalytic effect of the particular surface present during GSMBE growth. We propose that this effect is caused by the surface segregation of Ge species and leads to a smear-out of the Ge profile in the layer.

In-Situ Control of Wafer Charge Neutralization During High Current Ion Implants

1993 ◽  
Vol 316 ◽  
Author(s):  
E.N. Shauly ◽  
E. Koltin ◽  
I. Munin ◽  
Y. Avrahamov
Keyword(s):  
Real Time ◽  
Ion Beam ◽  
High Yield ◽  
Wafer Surface ◽  
High Current ◽  
Charge Condition ◽  
Major Process ◽  
Process Issue ◽  
Current Monitoring

ABSTRACTIon implantation in semiconductor devices frequently leads to a substantial wafer surface charge build up. Control of this charge during high current implantation is a major process issue, as it may affect the yield and reliability of thin dielectric layers. In addition, the charge build up may affect the ion beam resulting in a non-uniform implant and a reduction in device yield. Control of a specific machine parameter, that will give the charge condition of the ion implanter will enable to neutralize the charge build up.In this study, Disk Current Monitoring (DCM) is shown to be a reliable method for monitoring the Electron Shower (ES) performance in real time. A correlation was found between DCM level and yields, and between DCM level and breakdown voltage, as well as different maintenance activities regarding me ES. A simple 5 steps method is described to achieve a reliable, real time charge monitor, to insure operation within the “High Yield Range”.

Formation of Sub-100 NM GE Wires on Si by E-Beam Evaporation/Lithography

1995 ◽  
Vol 380 ◽  
Author(s):  
C. Deng ◽  
J. C. Wu ◽  
C. J. Barbero ◽  
T. W. Sigmon ◽  
M. N. Wybourne
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Si Substrates ◽  
Novel Technique ◽  
Atomic Force ◽  
Transmission Electron ◽  
First Time ◽  
Scanning Electron

ABSTRACTA fabrication process for sub-100 nm Ge wires on Si substrates is reported for the first time. Wires with a cross section of 6 × 57 nm2 are demonstrated. The wire structures are analyzed by atomic force (AFM), scanning electron (SEM), and transmission electron microscopy (TEM). Sample preparation for TEM is performed using a novel technique using both pre and in situ deposition of multiple protection layers using a Focused Ion Beam (FIB) micromachining system.

Probing Semiconductor/Insulator Heterostructures Through Electron Spin Resonance of Point Defects: Interfaces, Interlayers, and Stress

2006 ◽  
Vol 984 ◽  
Author(s):  
A. Stesmans ◽  
K. Clémer ◽  
P. Somers ◽  
V. V. Afanas'ev
Keyword(s):  
Electron Spin Resonance ◽  
Integrated Circuits ◽  
Electron Spin ◽  
Point Defects ◽  
Atomic Scale ◽  
Interface Quality ◽  
Si Substrates ◽  
Spin Resonance ◽  
The Impact

AbstractElectron spin resonance (ESR) spectroscopy has become indispensable when it comes to the characterization on atomic-scale of structural, and correlated, electrical properties of actual semiconductor/insulator heterostructures. Through probing of paramagnetic point defects such as the Pb-type defects, E', and EX as a function of VUV irradiation and post deposition heat treatment, basic information as to the nature, quality, and thermal stability of the interface and interfacial regions can be established. This is illustrated by some specific examples of ESR analysis on contemporary Si/insulator structures promising for future developments in integrated circuits. First the impact of strain on the Si/SiO2 entity will be discussed. Through ESR analysis of thermally oxidized (111)Si substrates mechanically stressed in situ during oxidation, and tensile strained (100)sSi/SiO2 structures, it will be pointed out that in-plane tensile stress in Si can significantly improve the interface quality. Next, ESR results for stacks of (100)Si/SiOx/HfO2 and (100)Si/LaAlO3 are presented, revealing the potential to attain a high quality Si/SiO2 interface for the former and an abrupt, thermally stable interface for the latter.

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