A zero VTH memory cell ferroelectric-NAND flash memory with 32% read disturb, 24% program disturb, 10% data retention improvement for enterprise SSD

2009 ◽  
Author(s):  
Teruyoshi Hatanaka ◽  
Mitsue Takahashi ◽  
Shigeki Sakai ◽  
Ken Takeuchi
Keyword(s):  
Flash Memory ◽  
Memory Cell ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Data Retention

The Effect of Trapped Charge Distributions on Data Retention Characteristics of nand Flash Memory Cells

2007 ◽  
Vol 28 (8) ◽  
pp. 750-752 ◽  
Author(s):  
M. Park ◽  
Kangdeog Suh ◽  
Keonsoo Kim ◽  
S. Hur ◽  
K. Kim ◽  
...  
Keyword(s):  
Flash Memory ◽  
Memory Cells ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Data Retention ◽  
Charge Distributions ◽  
Retention Characteristics ◽  
Trapped Charge

64 kbit Ferroelectric-Gate-Transistor-Integrated NAND Flash Memory with 7.5 V Program and Long Data Retention

2012 ◽  
Vol 51 ◽  
pp. 04DD01 ◽  
Author(s):  
Xizhen Zhang ◽  
Mitsue Takahashi ◽  
Ken Takeuchi ◽  
Shigeki Sakai
Keyword(s):  
Flash Memory ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Data Retention
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