Optimal Floating Gate Potential for Extending Data Retention of Post-Baking Method in Sub-20 nm Triple Level per Cell NAND Flash Memory

2016 ◽  
Vol 16 (7) ◽  
pp. 7295-7300
Author(s):  
Yu-Cheng Hsu ◽  
Wei Lin ◽  
Chun-Yen Chang
Keyword(s):  
Flash Memory ◽  
Floating Gate ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Data Retention ◽  
Gate Potential ◽  
20 Nm

Hybrid Floating Gate Cell for Sub-20-nm NAND Flash Memory Technology

2012 ◽  
Vol 33 (3) ◽  
pp. 333-335 ◽  
Author(s):  
P. Blomme ◽  
A. Cacciato ◽  
D. Wellekens ◽  
L. Breuil ◽  
M. Rosmeulen ◽  
...  
Keyword(s):  
Flash Memory ◽  
Floating Gate ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
20 Nm

The Effect of Trapped Charge Distributions on Data Retention Characteristics of nand Flash Memory Cells

2007 ◽  
Vol 28 (8) ◽  
pp. 750-752 ◽  
Author(s):  
M. Park ◽  
Kangdeog Suh ◽  
Keonsoo Kim ◽  
S. Hur ◽  
K. Kim ◽  
...  
Keyword(s):  
Flash Memory ◽  
Memory Cells ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Data Retention ◽  
Charge Distributions ◽  
Retention Characteristics ◽  
Trapped Charge

7.7 A 768Gb 3b/cell 3D-floating-gate NAND flash memory

2016 ◽  
Author(s):  
Tomoharu Tanaka ◽  
Mark Helm ◽  
Tommaso Vali ◽  
Ramin Ghodsi ◽  
Koichi Kawai ◽  
...  
Keyword(s):  
Flash Memory ◽  
Floating Gate ◽  
Nand Flash ◽  
Nand Flash Memory

Unified Endurance Degradation Model of Floating Gate NAND Flash Memory

2013 ◽  
Vol 60 (6) ◽  
pp. 2031-2037 ◽  
Author(s):  
Albert Fayrushin ◽  
Chang-Hyun Lee ◽  
Youngwoo Park ◽  
Jeong-Hyuk Choi ◽  
Chilhee Chung
Keyword(s):  
Flash Memory ◽  
Floating Gate ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Degradation Model

3-D Observation of dopant distribution at NAND flash memory floating gate using Atom probe tomography

2015 ◽  
Vol 11 (1) ◽  
pp. 60-64 ◽  
Author(s):  
Ji-hyun Lee ◽  
Byeong-Kyu Chae ◽  
Joong-Jeong Kim ◽  
Sun Young Lee ◽  
Chan Gyung Park
Keyword(s):  
Flash Memory ◽  
Atom Probe Tomography ◽  
Atom Probe ◽  
Floating Gate ◽  
Nand Flash ◽  
Dopant Distribution ◽  
Nand Flash Memory
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