On Board Low Noise 28 GHz Front End

2006 ◽  
Author(s):  
D'Ambrosio ◽  
D'Arcangelo ◽  
Gallesio ◽  
Gambaruto ◽  
Gatti ◽  
...  
Keyword(s):  
Low Noise ◽  
Front End

scholarly journals A Tri-Band Cooled Receiver for Geodetic VLBI

Sensors ◽  
2021 ◽  
Vol 21 (8) ◽  
pp. 2662
Author(s):  
José A. López-Pérez ◽  
Félix Tercero-Martínez ◽  
José M. Serna-Puente ◽  
Beatriz Vaquero-Jiménez ◽  
María Patino-Esteban ◽  
...  
Keyword(s):  
Very Long Baseline Interferometry ◽  
Low Noise ◽  
Cryogenic Temperatures ◽  
Geospatial Information ◽  
Receiver Noise ◽  
Geodetic Vlbi ◽  
Long Baseline ◽  
Front End ◽  
X Band ◽  
Santa Maria

This paper shows a simultaneous tri-band (S: 2.2–2.7 GHz, X: 7.5–9 GHz and Ka: 28–33 GHz) low-noise cryogenic receiver for geodetic Very Long Baseline Interferometry (geo-VLBI) which has been developed at Yebes Observatory laboratories in Spain. A special feature is that the whole receiver front-end is fully coolable down to cryogenic temperatures to minimize receiver noise. It was installed in the first radio telescope of the Red Atlántica de Estaciones Geodinámicas y Espaciales (RAEGE) project, which is located in Yebes Observatory, in the frame of the VLBI Global Observing System (VGOS). After this, the receiver was borrowed by the Norwegian Mapping Autorithy (NMA) for the commissioning of two VGOS radiotelescopes in Svalbard (Norway). A second identical receiver was built for the Ishioka VGOS station of the Geospatial Information Authority (GSI) of Japan, and a third one for the second RAEGE VGOS station, located in Santa María (Açores Archipelago, Portugal). The average receiver noise temperatures are 21, 23, and 25 Kelvin and the measured antenna efficiencies are 70%, 75%, and 60% in S-band, X-band, and Ka-band, respectively.

Fully integrated 60 GHz transceiver in SiGe BiCMOS, RF modules, and 3.6 Gbit/s OFDM data transmission

2011 ◽  
Vol 3 (2) ◽  
pp. 139-145 ◽  
Author(s):  
Srdjan Glisic ◽  
J. Christoph Scheytt ◽  
Yaoming Sun ◽  
Frank Herzel ◽  
Ruoyu Wang ◽  
...  
Keyword(s):  
Data Transmission ◽  
Intermediate Frequency ◽  
Phase Locked Loop ◽  
Data Rate ◽  
Low Noise ◽  
60 Ghz ◽  
Fully Integrated ◽  
Front End ◽  
Free Data ◽  
Bicmos Technology

A fully integrated transmitter (TX) and receiver (RX) front-end chipset, produced in 0.25 µm SiGe:C bipolar and complementary metal oxide semiconductor (BiCMOS) technology, is presented. The front-end is intended for high-speed wireless communication in the unlicensed ISM band of 9 GHz around 60 GHz. The TXand RX features a modified heterodyne topology with a sliding intermediate frequency. The TX features a 12 GHz in-phase and quadrature (I/Q) mixer, an intermediate frequency (IF) amplifier, a phase-locked loop, a 60 GHz mixer, an image-rejection filter, and a power amplifier. The RX features a low-noise amplifier (LNA), a 60 GHz mixer, a phase-locked loop (PLL), and an IF demodulator. The measured 1-dB compression point at the TX output is 12.6 dBm and the saturated power is 16.2 dBm. The LNA has measured noise figure of 6.5 dB at 60 GHz. Error-free data transmission with a 16 quadrature amplitude modulation (QAM) orthogonal frequency-division multiplexing (OFDM) signal and data rate of 3.6 Gbit/s (without coding 4.8 Gbit/s) over 15 m was demonstrated. This is the best reported result regarding both the data rate and transmission distance in SiGe and CMOS without beamforming.

A 79-GHz Adaptive-Gain and Low-Noise UWB Radar Receiver Front-End in 65-nm CMOS

2016 ◽  
pp. 1-9 ◽  
Author(s):  
Jingyu Jang ◽  
Juntaek Oh ◽  
Choul-Young Kim ◽  
Songcheol Hong
Keyword(s):  
Low Noise ◽  
Front End ◽  
Uwb Radar

scholarly journals A 1.5–40 GHz frequency modulated continuous wave radar receiver front-end

2021 ◽  
pp. 1-11
Author(s):  
Mantas Sakalas ◽  
Niko Joram ◽  
Frank Ellinger
Keyword(s):  
Continuous Wave ◽  
Noise Figure ◽  
Supply Voltage ◽  
Low Noise ◽  
Ultra Wideband ◽  
Front End ◽  
Wave Radar ◽  
Bicmos Technology ◽  
Circuit Components ◽  
High Band

Abstract This study presents an ultra-wideband receiver front-end, designed for a reconfigurable frequency modulated continuous wave radar in a 130 nm SiGe BiCMOS technology. A variety of innovative circuit components and design techniques were employed to achieve the ultra-wide bandwidth, low noise figure (NF), good linearity, and circuit ruggedness to high input power levels. The designed front-end is capable of achieving 1.5–40 GHz bandwidth, 30 dB conversion gain, a double sideband NF of 6–10.7 dB, input return loss better than 7.5 dB and an input referred 1 dB compression point of −23 dBm. The front-end withstands continuous wave power levels of at least 25 and 20 dBm at low band and high band inputs respectively. At 3 V supply voltage, the DC power consumption amounts to 302 mW when the low band is active and 352 mW for the high band case, whereas the total IC size is $3.08\, {\rm nm{^2}}$ .

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