The drivers of the differential communication lines based on radiation-hardened structured array MH2XA010

Author(s):  
O. V. Dvornikov ◽  
N. N. Prokopenko ◽  
I. V. Pakhomov ◽  
A. V. Bugakova
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.


2016 ◽  
Vol 18 (1) ◽  
pp. 76-86
Author(s):  
N.N. Prokopenko ◽  
N.V. Butyrlagin ◽  
A.V. Bugakova ◽  
A.A. Ignashin

2020 ◽  
Vol 4 ◽  
pp. 13-21
Author(s):  
Alexey Musaev ◽  
◽  
Sergey Zinkin ◽  
Igor Chernov

The use of signals with spectrum expansion allows us to effectively solve the problems of multi-station access to a repeater for a large number of subscribers. The article presents a study of signals with spectrum extension to protect satellite communication lines from possible interference. Directions for further experimental research are recommended.


2020 ◽  
Vol 96 (3s) ◽  
pp. 169-174
Author(s):  
Ю.М. Герасимов ◽  
Н.Г. Григорьев ◽  
А.В. Кобыляцкий ◽  
Я.Я. Петричкович

Рассматриваются архитектурные, схемотехнические и конструктивно-топологические особенности асинхронного радиационно стойкого ОЗУ 1657РУ2У емкостью 16 Мбит с организацией (1Мx16)/(2Mx8), изготавливаемого по коммерческой КМОП-технологии объемного кремния уровня 130 нм. СБИС ОЗУ нечувствительна к эффекту «защелкивания», имеет повышенные дозовую стойкость и сбоеустойчивость при воздействии отдельных ядерных частиц (ОЯЧ), протонов и нейтронов (ТЧ). The paper highlights architectural, schematic and topological features of the radiation hardened 16 Mbit CMOS SRAM with configurable organization 1Mx16/2Mx8, which is immune to latch-up and with improved total dose and heavy particles tolerance.


2019 ◽  
Vol 18 ◽  
pp. 1089-1096 ◽  
Author(s):  
Abdolah Amirany ◽  
Fahimeh Marvi ◽  
Kian Jafari ◽  
Ramin Rajaei
Keyword(s):  

Author(s):  
Ebrahim M. Al Seragi ◽  
Subhra Dash ◽  
K. Muthuseenu ◽  
John D. Cressler ◽  
Hugh J. Barnaby ◽  
...  

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