To apply the band structure models discussed in Part I (extended to structures with quantum confinement in Part III and applied to photonic devices in Part IV), a reliable set of input parameters is necessary. The chapter overviews the literature related to these parameters that has appeared since our published reviews. It also recommends specific values for all of them, including the dependence on temperature and alloy composition. If reliable experimental reports are available, they are used preferentially in the recommendations. Otherwise, it falls back to extrapolations from the existing data and theoretical estimates to fill in the gaps. It starts by reviewing and tabulating band parameters for the III–V compound semiconductors GaAs, AlAs, InAs, GaSb, AlSb, InSb, GaP, AlP, InP, GaN, AlN, and InN. The parameters include energy gaps, electron and hole mass parameters, deformation potentials, elastic constants, band offsets, and their temperature dependences.
Erratum: Pressure and temperature dependences of the elastic constants of compression‐annealed pyrolytic graphite