Optoelectronic effect of high-pressure water vapor annealing for nanocrystalline silicon films prepared by ion implantation

2008 ◽  
Author(s):  
B. Gelloz ◽  
A. Takeuchi ◽  
N. Koshida
Keyword(s):  
High Pressure ◽  
Water Vapor ◽  
Ion Implantation ◽  
Nanocrystalline Silicon ◽  
Silicon Films ◽  
Vapor Annealing ◽  
Pressure Water ◽  
Nanocrystalline Silicon Films

Synthesis and photoluminescence properties of silicon nanowires treated by high-pressure water vapor annealing

2007 ◽  
Vol 204 (5) ◽  
pp. 1302-1306 ◽  
Author(s):  
B. Salhi ◽  
B. Gelloz ◽  
N. Koshida ◽  
G. Patriarche ◽  
R. Boukherroub
Keyword(s):  
High Pressure ◽  
Water Vapor ◽  
Silicon Nanowires ◽  
Photoluminescence Properties ◽  
Vapor Annealing ◽  
Pressure Water

Nanocrystalline Silicon Films Grown at High Pressure in Very High Frequency Plasma Enhanced Chemical Vapor Deposition System

2010 ◽  
Vol 663-665 ◽  
pp. 1171-1174 ◽  
Author(s):  
Yan Qing Guo ◽  
Rui Huang ◽  
Jie Song ◽  
Xiang Wang ◽  
Yi Xiong Zhang
Keyword(s):  
High Pressure ◽  
Vapor Deposition ◽  
High Frequency ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Silicon Films ◽  
Very High Frequency ◽  
Hydrogen Dilution ◽  
Very High ◽  
Nanocrystalline Silicon Films

Nanocrystalline silicon films have been fabricated from SiH4 diluted with H2 in very high frequency (40.68 MHz) plasma enhanced chemical vapor deposition system at low temperatures (250oC). The influence of pressure on the structural properties of nanocrystalline silicon films has been investigated. The experimental results reveal that a very high hydrogen dilution is needed to crystallize the film grown at high pressure. If the hydrogen dilution is not high enough, the film could also be crystallized through lowering the pressure. Furthermore, the crystallinity and grain size increase with decreasing the pressure. These results could be attributed to the increase of ion bombardment energy and the higher atomic hydrogen flux toward the growing film surface at lower pressures.

lmproving high-k gate dielectrics properties by high pressure water vapor annealing

2005 ◽  
Author(s):  
P. Punchaipetch ◽  
H. Nakamura ◽  
Y. Uraoka ◽  
T. Fuyuki ◽  
T. Sameshima ◽  
...  
Keyword(s):  
High Pressure ◽  
Water Vapor ◽  
Gate Dielectrics ◽  
High K ◽  
Vapor Annealing ◽  
Pressure Water

High-Pressure Water-Vapor Annealing for Enhancement of a-Si:H Film Passivation of Silicon Surface

2014 ◽  
Vol 31 (10) ◽  
pp. 108501 ◽  
Author(s):  
Chun-Lin Guo ◽  
Lei Wang ◽  
Yan-Rong Zhang ◽  
Hai-Feng Zhou ◽  
Feng Liang ◽  
...  
Keyword(s):  
High Pressure ◽  
Water Vapor ◽  
Silicon Surface ◽  
Vapor Annealing ◽  
Pressure Water
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