Investigation of Switching Characteristics of Contact Materials for Inductive Load

2021 ◽  
Author(s):  
Yubin He ◽  
Xu Zhang ◽  
Wanbin Ren
Keyword(s):  
Inductive Load ◽  
Contact Materials ◽  
Switching Characteristics

scholarly journals Bidirectional DC Converter with Frequency Control: Analysis and Implementation

Energies ◽  
2018 ◽  
Vol 11 (9) ◽  
pp. 2450 ◽  
Author(s):  
Bor-Ren Lin ◽  
Yen-Chieh Huang
Keyword(s):  
High Voltage ◽  
Bridge Circuit ◽  
Low Voltage ◽  
Frequency Control ◽  
Control Analysis ◽  
Power Transfer ◽  
Inductive Load ◽  
Zero Voltage Switching ◽  
Synchronous Rectifier ◽  
Switching Characteristics

In this paper, a direct current (dc) converter with the abilities of bidirectional power transfer and soft switching characteristics is studied and implemented. The circuit schematic of the developed dc converter is built by a half-bridge converter and a center-tapped rectifier with synchronous rectifier. Under forward power transfer, a half-bridge circuit is controlled to regulate the low-voltage side at a stable value. For backward power transfer, a center-tapped rectifier with synchronous rectifier is regulated to control the high-voltage side at the desired voltage value, and the half-bridge circuit is operated as a voltage doubler rectifier. Active power devices are operated at zero-voltage switching using a series resonant technique on the high-voltage side with frequency modulation and inductive load operation. The practicability of the developed converter is established from experiments with a laboratory prototype circuit.

New High-Voltage Unipolar Mode p+ Si/n– 4H-SiC Heterojunction Diode

2005 ◽  
Vol 483-485 ◽  
pp. 953-956 ◽  
Author(s):  
Tetsuya Hayashi ◽  
Hideaki Tanaka ◽  
Yoshio Shimoida ◽  
Satoshi Tanimoto ◽  
Masakatsu Hoshi
Keyword(s):  
Leakage Current ◽  
High Voltage ◽  
Drift Region ◽  
Heterojunction Diode ◽  
Inductive Load ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Blocking Voltage ◽  
Switching Characteristics ◽  
P Type

We demonstrate a new high-voltage p+ Si/n- 4H-SiC heterojunction diode (HJD) by numerical simulation and experimental results. This HJD is expected to display good reverse recovery because of unipolar action similar to that of a SiC Schottky barrier diode (SBD) when forward biased. The blocking voltage of the HJD is almost equal to the ideal level in the drift region of n- 4H-SiC. In addition, the HJD has the potential for a lower reverse leakage current compared with the SBD. A HJD was fabricated with p+-type polycrystalline silicon on an n--type epitaxial layer of 4H-SiC. Measured reverse blocking voltage was 1600 V with low leakage current. Switching characteristics of the fabricated HJD showed nearly zero reverse recovery with an inductive load circuit.

1700V, 20A 4H-SiC DMOSFETs Optimized for High Temperature Operation

2011 ◽  
Vol 679-680 ◽  
pp. 633-636 ◽  
Author(s):  
Brett A. Hull ◽  
Sei Hyung Ryu ◽  
Q. Jon Zhang ◽  
Charlotte Jonas ◽  
Michael J. O'Loughlin ◽  
...  
Keyword(s):  
High Temperature ◽  
Leakage Current ◽  
Entire Temperature Range ◽  
Electrical Characteristics ◽  
Switching Circuit ◽  
Inductive Load ◽  
Temperature Range ◽  
Continuous Current ◽  
Switching Characteristics ◽  
High Temperature Operation

DMOSFETs fabricated in 4H-SiC with capabilities for blocking in excess of 1700V and conducting 20A continuous current in the on-state are presented. These SiC DMOSFETs remain functional to temperatures in excess of 225°C, with leakage current at 1700V at 225°C of less than 5 A with VGS = 0V. The DMOSFETs show excellent switching characteristics, with total switching energy of 1.8 to 1.95 mJ over the entire temperature range of testing (25°C to 200°C), when switched from the blocking state at 1200V to conducting at 20A in a clamped inductive load switching circuit. The electrical characteristics are compared to commercially available Si IGBTs rated to 1700V with similar current ratings as the SiC DMOSFET described herein.

A Study of Current Chopping Characteristics in Metal-Carbide Composite Contact Materials

2009 ◽  
Vol 129 (4) ◽  
pp. 548-552
Author(s):  
Atsushi Yamamoto ◽  
Takashi Kusano ◽  
Tsutomu Okutomi ◽  
Kunio Yokokura ◽  
Mitsutaka Homma
Keyword(s):  
Metal Carbide ◽  
Contact Materials ◽  
Carbide Composite ◽  
Composite Contact

Deposition of Bi2O3 Thin Films and Their Resistive Switching Characteristics

2012 ◽  
Vol 27 (3) ◽  
pp. 323-326
Author(s):  
Zhen-Guo JI ◽  
Jun-Jie WANG ◽  
Qi-Nan MAO ◽  
Jun-Hua XI
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Switching Characteristics

Effect of Top Electrode Materials on Switching Characteristics and Endurance Properties of Zinc Oxide Based RRAM Device

2020 ◽  
Vol 12 (1) ◽  
pp. 01007-1-01007-6
Author(s):  
Chandra Prakash Gupta ◽  
◽  
Praveen K. Jain ◽  
Umesh Chand ◽  
Shashi Kant Sharma ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Electrode Materials ◽  
Switching Characteristics

β-Glucan, a Promising Polysaccharide for Bio-based Films Developments for Food Contact Materials and Medical Applications

2018 ◽  
Vol 22 (12) ◽  
pp. 1249-1254 ◽  
Author(s):  
Mercedes Peltzer ◽  
Juan F. Delgado ◽  
Andres G. Salvay ◽  
Jorge R. Wagner
Keyword(s):  
Medical Applications ◽  
Contact Materials ◽  
Food Contact Materials ◽  
Food Contact
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